JPS59116369A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS59116369A
JPS59116369A JP22602182A JP22602182A JPS59116369A JP S59116369 A JPS59116369 A JP S59116369A JP 22602182 A JP22602182 A JP 22602182A JP 22602182 A JP22602182 A JP 22602182A JP S59116369 A JPS59116369 A JP S59116369A
Authority
JP
Japan
Prior art keywords
cathode electrode
sputtering rate
thin film
electrode
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22602182A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0525951B2 (enrdf_load_stackoverflow
Inventor
Teruo Busshu
照夫 物集
Eiji Matsuzaki
永二 松崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22602182A priority Critical patent/JPS59116369A/ja
Publication of JPS59116369A publication Critical patent/JPS59116369A/ja
Publication of JPH0525951B2 publication Critical patent/JPH0525951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP22602182A 1982-12-24 1982-12-24 プラズマｃｖｄ装置 Granted JPS59116369A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22602182A JPS59116369A (ja) 1982-12-24 1982-12-24 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22602182A JPS59116369A (ja) 1982-12-24 1982-12-24 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS59116369A true JPS59116369A (ja) 1984-07-05
JPH0525951B2 JPH0525951B2 (enrdf_load_stackoverflow) 1993-04-14

Family

ID=16838539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22602182A Granted JPS59116369A (ja) 1982-12-24 1982-12-24 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS59116369A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6497118B1 (en) 2000-09-19 2002-12-24 Corning Incorporated Method and apparatus for reducing refractory contamination in fused silica processes
US6984595B1 (en) 1984-11-26 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Layer member forming method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54184357U (enrdf_load_stackoverflow) * 1978-06-19 1979-12-27
JPS58181865A (ja) * 1982-04-20 1983-10-24 Citizen Watch Co Ltd プラズマｃｖｄ装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54184357U (enrdf_load_stackoverflow) * 1978-06-19 1979-12-27
JPS58181865A (ja) * 1982-04-20 1983-10-24 Citizen Watch Co Ltd プラズマｃｖｄ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6984595B1 (en) 1984-11-26 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Layer member forming method
US6497118B1 (en) 2000-09-19 2002-12-24 Corning Incorporated Method and apparatus for reducing refractory contamination in fused silica processes

Also Published As

Publication number Publication date
JPH0525951B2 (enrdf_load_stackoverflow) 1993-04-14

Similar Documents

Publication Publication Date Title
JPS59116369A (ja) プラズマｃｖｄ装置
US4700261A (en) Method and apparatus for electrically charging or discharging
CN111613500B (zh) 一种微通道板的三氧化二铝防离子反馈膜的制备方法
JPS5499576A (en) Thin-film transistor and its manufacture
JPH0722149B2 (ja) 平行平板形ドライエッチング装置
CN108735892A (zh) 一种霍尔元件及其制备方法
JP7114516B2 (ja) セパレータ用金属材料、燃料電池のセパレータ及び燃料電池
JP4934907B2 (ja) 静電チャック
JP2002030443A (ja) 基板上への成膜方法及び装置
EP0103521A3 (fr) Perfectionnements aux substrats revêtus d'une couche mince d'oxyde de platine, aux dispositifs d'obtention des substrats ainsi revêtus, et aux produits obtenus à partir de tels substrats revêtus
JPH0510426B2 (enrdf_load_stackoverflow)
JPS59104659A (ja) 電子写真感光体
JPH0721669B2 (ja) 除・帯電方法
JPH08170193A (ja) 金属酸化物膜付き基体の製造方法
JPS57153436A (en) Semiconductor device
JP2006244903A (ja) 基体表面処理方法およびこれを用いた基体表面処理装置
JPS5963699A (ja) 膜形成装置
JPS59139629A (ja) プラズマドライ処理装置
JPS62219615A (ja) 基板処理装置
JPS58193524A (ja) エレクトロクロミツク表示素子
JPH0454992B2 (enrdf_load_stackoverflow)
JPS5515183A (en) Zinc oxide photoreceptor
JPH04172245A (ja) Ｌｃ／ａｐｉ質量分析計
JPS5855037A (ja) 蒸着装置
JPH0431060B2 (enrdf_load_stackoverflow)