JPH0525951B2 - - Google Patents

Info

Publication number
JPH0525951B2
JPH0525951B2 JP57226021A JP22602182A JPH0525951B2 JP H0525951 B2 JPH0525951 B2 JP H0525951B2 JP 57226021 A JP57226021 A JP 57226021A JP 22602182 A JP22602182 A JP 22602182A JP H0525951 B2 JPH0525951 B2 JP H0525951B2
Authority
JP
Japan
Prior art keywords
plasma
electrode
plasma cvd
cathode electrode
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57226021A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59116369A (ja
Inventor
Teruo Butsushu
Eiji Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22602182A priority Critical patent/JPS59116369A/ja
Publication of JPS59116369A publication Critical patent/JPS59116369A/ja
Publication of JPH0525951B2 publication Critical patent/JPH0525951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP22602182A 1982-12-24 1982-12-24 プラズマｃｖｄ装置 Granted JPS59116369A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22602182A JPS59116369A (ja) 1982-12-24 1982-12-24 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22602182A JPS59116369A (ja) 1982-12-24 1982-12-24 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS59116369A JPS59116369A (ja) 1984-07-05
JPH0525951B2 true JPH0525951B2 (enrdf_load_stackoverflow) 1993-04-14

Family

ID=16838539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22602182A Granted JPS59116369A (ja) 1982-12-24 1982-12-24 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS59116369A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6497118B1 (en) 2000-09-19 2002-12-24 Corning Incorporated Method and apparatus for reducing refractory contamination in fused silica processes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54184357U (enrdf_load_stackoverflow) * 1978-06-19 1979-12-27
JPS58181865A (ja) * 1982-04-20 1983-10-24 Citizen Watch Co Ltd プラズマｃｖｄ装置

Also Published As

Publication number Publication date
JPS59116369A (ja) 1984-07-05

Similar Documents

Publication Publication Date Title
JPH0741153Y2 (ja) 試料処理用電極
JPH0250197B2 (enrdf_load_stackoverflow)
GB1514664A (en) Method of forming an electrically insulative coating
FR2427685A1 (fr) Perfectionnements aux transistors a effet de champ et a leur fabrication
IE802615L (en) Thin film transistor
JPH05160076A (ja) ドライエッチング装置
JP3509856B2 (ja) 安定化層のための保護層及びその製法
JPH0525951B2 (enrdf_load_stackoverflow)
JPH0437579B2 (enrdf_load_stackoverflow)
JPH03237715A (ja) エッチング方法
JPH01188678A (ja) プラズマ気相成長装置
JPH0469465U (enrdf_load_stackoverflow)
JPH0758083A (ja) 半導体製造装置
JPH0451473Y2 (enrdf_load_stackoverflow)
JPS62238370A (ja) プラズマｃｖｄ装置
GB1145348A (en) Improvements in and relating to sputtering
JPS57153436A (en) Semiconductor device
JP2748781B2 (ja) シリコン膜の形成方法
JPS5472971A (en) Protective coating for semiconductor surface
JPS62219615A (ja) 基板処理装置
JPH0730682Y2 (ja) スパッタリング成膜装置用の基板搬送トレイ
JP2554896B2 (ja) プラズマｃｖｄ装置
JPS61214525A (ja) プラズマｃｖｄ装置
JPH0682623B2 (ja) 薄膜形成方法とその製造装置
KR790001587B1 (ko) 알루미나 보호피막을 형성한 저잡음 반도체 소자