JPS59114882A - インジウム−アンチモン系複合結晶半導体及びその製造方法 - Google Patents

インジウム−アンチモン系複合結晶半導体及びその製造方法

Info

Publication number
JPS59114882A
JPS59114882A JP57224639A JP22463982A JPS59114882A JP S59114882 A JPS59114882 A JP S59114882A JP 57224639 A JP57224639 A JP 57224639A JP 22463982 A JP22463982 A JP 22463982A JP S59114882 A JPS59114882 A JP S59114882A
Authority
JP
Japan
Prior art keywords
indium
antimony
thin film
composite crystal
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57224639A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0425718B2 (en:Method
Inventor
Keiji Kuboyama
久保山　啓治
Takeki Matsui
雄毅 松居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP57224639A priority Critical patent/JPS59114882A/ja
Publication of JPS59114882A publication Critical patent/JPS59114882A/ja
Publication of JPH0425718B2 publication Critical patent/JPH0425718B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Hall/Mr Elements (AREA)
JP57224639A 1982-12-21 1982-12-21 インジウム−アンチモン系複合結晶半導体及びその製造方法 Granted JPS59114882A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57224639A JPS59114882A (ja) 1982-12-21 1982-12-21 インジウム−アンチモン系複合結晶半導体及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57224639A JPS59114882A (ja) 1982-12-21 1982-12-21 インジウム−アンチモン系複合結晶半導体及びその製造方法

Publications (2)

Publication Number Publication Date
JPS59114882A true JPS59114882A (ja) 1984-07-03
JPH0425718B2 JPH0425718B2 (en:Method) 1992-05-01

Family

ID=16816859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57224639A Granted JPS59114882A (ja) 1982-12-21 1982-12-21 インジウム−アンチモン系複合結晶半導体及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59114882A (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120378A (ja) * 1984-07-09 1986-01-29 Asahi Chem Ind Co Ltd 磁電変換素子
DE3606607A1 (de) * 1985-02-28 1986-09-11 Tokyo Juki Industrial Co., Ltd., Chofu, Tokio/Tokyo Naehmaschine
JP2017143197A (ja) * 2016-02-10 2017-08-17 旭化成エレクトロニクス株式会社 化合物半導体基板の製造方法及び化合物半導体基板、半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120378A (ja) * 1984-07-09 1986-01-29 Asahi Chem Ind Co Ltd 磁電変換素子
DE3606607A1 (de) * 1985-02-28 1986-09-11 Tokyo Juki Industrial Co., Ltd., Chofu, Tokio/Tokyo Naehmaschine
DE3606607C2 (en:Method) * 1985-02-28 1992-01-02 Tokyo Juki Industrial Co., Ltd., Chofu, Tokio/Tokyo, Jp
JP2017143197A (ja) * 2016-02-10 2017-08-17 旭化成エレクトロニクス株式会社 化合物半導体基板の製造方法及び化合物半導体基板、半導体装置

Also Published As

Publication number Publication date
JPH0425718B2 (en:Method) 1992-05-01

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