JPS59113666A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS59113666A
JPS59113666A JP57223410A JP22341082A JPS59113666A JP S59113666 A JPS59113666 A JP S59113666A JP 57223410 A JP57223410 A JP 57223410A JP 22341082 A JP22341082 A JP 22341082A JP S59113666 A JPS59113666 A JP S59113666A
Authority
JP
Japan
Prior art keywords
film
layer
thin film
manufacturing
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57223410A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0556016B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yasuhiro Nasu
安宏 那須
Satoru Kawai
悟 川井
Toshiro Kodama
敏郎 児玉
Kenichi Yanai
梁井　健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57223410A priority Critical patent/JPS59113666A/ja
Publication of JPS59113666A publication Critical patent/JPS59113666A/ja
Publication of JPH0556016B2 publication Critical patent/JPH0556016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
JP57223410A 1982-12-20 1982-12-20 薄膜トランジスタの製造方法 Granted JPS59113666A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57223410A JPS59113666A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223410A JPS59113666A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59113666A true JPS59113666A (ja) 1984-06-30
JPH0556016B2 JPH0556016B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-18

Family

ID=16797703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223410A Granted JPS59113666A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59113666A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4778773A (en) * 1986-06-10 1988-10-18 Nec Corporation Method of manufacturing a thin film transistor
JPS644071A (en) * 1987-06-26 1989-01-09 Nippon Telegraph & Telephone Thin film transistor and manufacture thereof
US4958205A (en) * 1985-03-29 1990-09-18 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing the same
US5045487A (en) * 1982-03-31 1991-09-03 Fujitsu Limited Process for producing a thin film field-effect transistor
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
US5493129A (en) * 1988-06-29 1996-02-20 Hitachi, Ltd. Thin film transistor structure having increased on-current

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212177A (ja) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd 絶縁ゲ−ト型トランジスタおよびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212177A (ja) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd 絶縁ゲ−ト型トランジスタおよびその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045487A (en) * 1982-03-31 1991-09-03 Fujitsu Limited Process for producing a thin film field-effect transistor
US4958205A (en) * 1985-03-29 1990-09-18 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing the same
US5137841A (en) * 1985-03-29 1992-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a thin film transistor using positive and negative photoresists
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
US4778773A (en) * 1986-06-10 1988-10-18 Nec Corporation Method of manufacturing a thin film transistor
JPS644071A (en) * 1987-06-26 1989-01-09 Nippon Telegraph & Telephone Thin film transistor and manufacture thereof
US5493129A (en) * 1988-06-29 1996-02-20 Hitachi, Ltd. Thin film transistor structure having increased on-current
US5821565A (en) * 1988-06-29 1998-10-13 Hitachi, Ltd. Thin film transistor structure having increased on-current
US5981973A (en) * 1988-06-29 1999-11-09 Hitachi, Ltd. Thin film transistor structure having increased on-current

Also Published As

Publication number Publication date
JPH0556016B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-18

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