JPS59113627A - パタ−ン化されたアルミニウム層を形成する方法 - Google Patents

パタ−ン化されたアルミニウム層を形成する方法

Info

Publication number
JPS59113627A
JPS59113627A JP57223552A JP22355282A JPS59113627A JP S59113627 A JPS59113627 A JP S59113627A JP 57223552 A JP57223552 A JP 57223552A JP 22355282 A JP22355282 A JP 22355282A JP S59113627 A JPS59113627 A JP S59113627A
Authority
JP
Japan
Prior art keywords
layer
patterned
metal layer
mask
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57223552A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0144014B2 (enExample
Inventor
Yuji Imai
勇次 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP57223552A priority Critical patent/JPS59113627A/ja
Priority to US06/511,403 priority patent/US4629539A/en
Publication of JPS59113627A publication Critical patent/JPS59113627A/ja
Priority to US06/642,429 priority patent/US4642168A/en
Publication of JPH0144014B2 publication Critical patent/JPH0144014B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP57223552A 1982-07-08 1982-12-20 パタ−ン化されたアルミニウム層を形成する方法 Granted JPS59113627A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57223552A JPS59113627A (ja) 1982-12-20 1982-12-20 パタ−ン化されたアルミニウム層を形成する方法
US06/511,403 US4629539A (en) 1982-07-08 1983-07-07 Metal layer patterning method
US06/642,429 US4642168A (en) 1982-07-08 1984-08-20 Metal layer patterning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223552A JPS59113627A (ja) 1982-12-20 1982-12-20 パタ−ン化されたアルミニウム層を形成する方法

Publications (2)

Publication Number Publication Date
JPS59113627A true JPS59113627A (ja) 1984-06-30
JPH0144014B2 JPH0144014B2 (enExample) 1989-09-25

Family

ID=16799941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223552A Granted JPS59113627A (ja) 1982-07-08 1982-12-20 パタ−ン化されたアルミニウム層を形成する方法

Country Status (1)

Country Link
JP (1) JPS59113627A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322434A (ja) * 1989-06-19 1991-01-30 Nec Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322434A (ja) * 1989-06-19 1991-01-30 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0144014B2 (enExample) 1989-09-25

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