JPS59104471A - 堆積膜形成法 - Google Patents

堆積膜形成法

Info

Publication number
JPS59104471A
JPS59104471A JP21369182A JP21369182A JPS59104471A JP S59104471 A JPS59104471 A JP S59104471A JP 21369182 A JP21369182 A JP 21369182A JP 21369182 A JP21369182 A JP 21369182A JP S59104471 A JPS59104471 A JP S59104471A
Authority
JP
Japan
Prior art keywords
deposited film
film
forming
cyclic
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21369182A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0445582B2 (enExample
Inventor
Masaaki Hirooka
広岡　政昭
Wataru Ando
亘 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP21369182A priority Critical patent/JPS59104471A/ja
Publication of JPS59104471A publication Critical patent/JPS59104471A/ja
Publication of JPH0445582B2 publication Critical patent/JPH0445582B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP21369182A 1982-12-06 1982-12-06 堆積膜形成法 Granted JPS59104471A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21369182A JPS59104471A (ja) 1982-12-06 1982-12-06 堆積膜形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21369182A JPS59104471A (ja) 1982-12-06 1982-12-06 堆積膜形成法

Publications (2)

Publication Number Publication Date
JPS59104471A true JPS59104471A (ja) 1984-06-16
JPH0445582B2 JPH0445582B2 (enExample) 1992-07-27

Family

ID=16643384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21369182A Granted JPS59104471A (ja) 1982-12-06 1982-12-06 堆積膜形成法

Country Status (1)

Country Link
JP (1) JPS59104471A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921722A (en) * 1984-10-11 1990-05-01 Canon Kabushiki Kaisha Method for forming deposited film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921722A (en) * 1984-10-11 1990-05-01 Canon Kabushiki Kaisha Method for forming deposited film

Also Published As

Publication number Publication date
JPH0445582B2 (enExample) 1992-07-27

Similar Documents

Publication Publication Date Title
US4554180A (en) Process for producing silicon-containing deposit film
CN114630834A (zh) 用于沉积高纯度氧化锡的有机金属化合物和干法蚀刻所述氧化锡薄膜和沉积反应器
US4555464A (en) Amorphous silicon electrophotographic photosensitive materials
JPS6043485A (ja) アモルフアスシリコン膜の形成方法
JPS5978919A (ja) アモルフアスシリコン膜の形成方法
JPS59104471A (ja) 堆積膜形成法
US7674926B1 (en) Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US8624049B2 (en) Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
JP2002087809A (ja) シリコン膜の形成方法
US5593727A (en) Production of films of SiO2 by chemical vapor deposition
JP4193017B2 (ja) ホウ素でドープされたシリコン膜の形成方法
JPS6026665A (ja) アモルフアスシリコン堆積膜形成法
JPH0411515B2 (enExample)
JPH11147888A (ja) ２価金属および１３族金属を含む揮発性有機金属化合物、その製造方法およびそれを用いた異種金属酸化物膜の製造方法
JP2847170B2 (ja) シリコン薄膜の製造方法
JP2956789B2 (ja) シリコン化合物
JPS59229565A (ja) 電子写真用感光体
JPS60100675A (ja) 堆積膜の形成法
CN1206418A (zh) 生产有机氯化铟的方法
JPH05315259A (ja) 多結晶シリコン膜の製造方法
JPS6117910B2 (enExample)
JP2001011184A (ja) ケイ素ポリマーおよびその製造方法
JP2001055444A (ja) ケイ素ポリマーの製造方法
JPH09169773A (ja) アルコキシホルミルシラン、その製法、その熱分解法、基材上に二酸化ケイ素被覆を製造する方法及び縮合により加硫可能なシリコーン材料
JP2001089572A (ja) リン変性ケイ素ポリマー、その製法、それを含有する組成物ならびにリン変性シリコンの製法