JPS59100576A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59100576A
JPS59100576A JP57210139A JP21013982A JPS59100576A JP S59100576 A JPS59100576 A JP S59100576A JP 57210139 A JP57210139 A JP 57210139A JP 21013982 A JP21013982 A JP 21013982A JP S59100576 A JPS59100576 A JP S59100576A
Authority
JP
Japan
Prior art keywords
layer
inp
semiconductor layer
semiconductor
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57210139A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6357949B2 (enrdf_load_stackoverflow
Inventor
Masahiko Takigawa
正彦 滝川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57210139A priority Critical patent/JPS59100576A/ja
Publication of JPS59100576A publication Critical patent/JPS59100576A/ja
Publication of JPS6357949B2 publication Critical patent/JPS6357949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57210139A 1982-11-30 1982-11-30 半導体装置 Granted JPS59100576A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57210139A JPS59100576A (ja) 1982-11-30 1982-11-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57210139A JPS59100576A (ja) 1982-11-30 1982-11-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS59100576A true JPS59100576A (ja) 1984-06-09
JPS6357949B2 JPS6357949B2 (enrdf_load_stackoverflow) 1988-11-14

Family

ID=16584421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57210139A Granted JPS59100576A (ja) 1982-11-30 1982-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS59100576A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987003742A1 (en) * 1985-12-13 1987-06-18 Allied Corporation Mesfet device having a semiconductor surface barrier layer
US4764796A (en) * 1985-12-19 1988-08-16 Sumitomo Electric Industries, Ltd. Heterojunction field effect transistor with two-dimensional electron layer
JPH01183859A (ja) * 1988-01-19 1989-07-21 Sumitomo Electric Ind Ltd ヘテロ接合電界効果トランジスタ
US4962409A (en) * 1987-01-20 1990-10-09 International Business Machines Corporation Staggered bandgap gate field effect transistor
US5170230A (en) * 1989-05-10 1992-12-08 Fujitsu Limited Semiconductor device and production method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987003742A1 (en) * 1985-12-13 1987-06-18 Allied Corporation Mesfet device having a semiconductor surface barrier layer
US4764796A (en) * 1985-12-19 1988-08-16 Sumitomo Electric Industries, Ltd. Heterojunction field effect transistor with two-dimensional electron layer
US4962409A (en) * 1987-01-20 1990-10-09 International Business Machines Corporation Staggered bandgap gate field effect transistor
JPH01183859A (ja) * 1988-01-19 1989-07-21 Sumitomo Electric Ind Ltd ヘテロ接合電界効果トランジスタ
US5170230A (en) * 1989-05-10 1992-12-08 Fujitsu Limited Semiconductor device and production method thereof

Also Published As

Publication number Publication date
JPS6357949B2 (enrdf_load_stackoverflow) 1988-11-14

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