JPS5898968A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5898968A
JPS5898968A JP56197843A JP19784381A JPS5898968A JP S5898968 A JPS5898968 A JP S5898968A JP 56197843 A JP56197843 A JP 56197843A JP 19784381 A JP19784381 A JP 19784381A JP S5898968 A JPS5898968 A JP S5898968A
Authority
JP
Japan
Prior art keywords
film
melting point
layer
molybdenum
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56197843A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0363225B2 (cs
Inventor
Kohei Higuchi
行平 樋口
Hidekazu Okabayashi
岡林　秀和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56197843A priority Critical patent/JPS5898968A/ja
Publication of JPS5898968A publication Critical patent/JPS5898968A/ja
Publication of JPH0363225B2 publication Critical patent/JPH0363225B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56197843A 1981-12-09 1981-12-09 半導体装置 Granted JPS5898968A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56197843A JPS5898968A (ja) 1981-12-09 1981-12-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56197843A JPS5898968A (ja) 1981-12-09 1981-12-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS5898968A true JPS5898968A (ja) 1983-06-13
JPH0363225B2 JPH0363225B2 (cs) 1991-09-30

Family

ID=16381257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56197843A Granted JPS5898968A (ja) 1981-12-09 1981-12-09 半導体装置

Country Status (1)

Country Link
JP (1) JPS5898968A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5125007A (en) * 1988-11-25 1992-06-23 Mitsubishi Denki Kabushiki Kaisha Thin-film soi-mosfet with a body region
US5414301A (en) * 1985-03-15 1995-05-09 National Semiconductor Corporation High temperature interconnect system for an integrated circuit
US5436505A (en) * 1993-02-09 1995-07-25 Kabushiki Kaisha Kobe Seiko Sho Heat-resisting ohmic contact on semiconductor diamond layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414301A (en) * 1985-03-15 1995-05-09 National Semiconductor Corporation High temperature interconnect system for an integrated circuit
US5125007A (en) * 1988-11-25 1992-06-23 Mitsubishi Denki Kabushiki Kaisha Thin-film soi-mosfet with a body region
US5436505A (en) * 1993-02-09 1995-07-25 Kabushiki Kaisha Kobe Seiko Sho Heat-resisting ohmic contact on semiconductor diamond layer

Also Published As

Publication number Publication date
JPH0363225B2 (cs) 1991-09-30

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