JPS5897048A - フオトマスク - Google Patents

フオトマスク

Info

Publication number
JPS5897048A
JPS5897048A JP56198280A JP19828081A JPS5897048A JP S5897048 A JPS5897048 A JP S5897048A JP 56198280 A JP56198280 A JP 56198280A JP 19828081 A JP19828081 A JP 19828081A JP S5897048 A JPS5897048 A JP S5897048A
Authority
JP
Japan
Prior art keywords
photosensitive resin
photomask
thin film
film pattern
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56198280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6212913B2 (OSRAM
Inventor
Haruyuki Hoshika
星加　春幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56198280A priority Critical patent/JPS5897048A/ja
Publication of JPS5897048A publication Critical patent/JPS5897048A/ja
Publication of JPS6212913B2 publication Critical patent/JPS6212913B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP56198280A 1981-12-04 1981-12-04 フオトマスク Granted JPS5897048A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56198280A JPS5897048A (ja) 1981-12-04 1981-12-04 フオトマスク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56198280A JPS5897048A (ja) 1981-12-04 1981-12-04 フオトマスク

Publications (2)

Publication Number Publication Date
JPS5897048A true JPS5897048A (ja) 1983-06-09
JPS6212913B2 JPS6212913B2 (OSRAM) 1987-03-23

Family

ID=16388493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56198280A Granted JPS5897048A (ja) 1981-12-04 1981-12-04 フオトマスク

Country Status (1)

Country Link
JP (1) JPS5897048A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547548A (ja) * 1991-08-08 1993-02-26 Tokyo Electric Co Ltd 電磁石保護回路

Also Published As

Publication number Publication date
JPS6212913B2 (OSRAM) 1987-03-23

Similar Documents

Publication Publication Date Title
US3317320A (en) Duo resist process
JPH04115515A (ja) パターン形成方法
JPS5897048A (ja) フオトマスク
JPS633302B2 (OSRAM)
CN105161454B (zh) 一种阵列基板及其制备方法、显示装置
US3673018A (en) Method of fabrication of photomasks
GB2291982A (en) Photo masks
TWI238456B (en) Composite layer method for minimizing PED effect
JPS6043827A (ja) 微細パタ−ンの形成方法
JPH05107745A (ja) フオトマスク及び半導体装置の製造方法
JPS6156349A (ja) フオト・マスクの製造方法
JPH04216553A (ja) 半導体製造用マスク
JP2580681B2 (ja) 半導体装置の製造方法
JPH06349728A (ja) レジストパターンの形成方法
JPS58204532A (ja) パタ−ン形成方法
JPS5951565A (ja) 半導体集積回路装置
JPS59155930A (ja) 微細パタ−ンの形成方法
JPH0677159A (ja) 半導体集積回路装置の製造方法
JPS604944A (ja) フオトマスク
JPS6373251A (ja) マスク
JPS61112316A (ja) パタ−ン形成法
JPS614246A (ja) 半導体デバイスの層間絶縁膜形成方法
JPS60106132A (ja) パタ−ン形成方法
JPH0497251A (ja) 非帯電性ペリクル
JPS61196536A (ja) 半導体デバイス材料とそれを用いた半導体デバイスの製造方法