JPS5896781A - 半導体発光装置の製造方法 - Google Patents

半導体発光装置の製造方法

Info

Publication number
JPS5896781A
JPS5896781A JP56195182A JP19518281A JPS5896781A JP S5896781 A JPS5896781 A JP S5896781A JP 56195182 A JP56195182 A JP 56195182A JP 19518281 A JP19518281 A JP 19518281A JP S5896781 A JPS5896781 A JP S5896781A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
semiconductor light
film
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56195182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244873B2 (enrdf_load_stackoverflow
Inventor
Kunihiko Asahi
旭　国彦
Shuichi Mayumi
周一 真弓
Ichizo Kamei
亀井　市蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56195182A priority Critical patent/JPS5896781A/ja
Publication of JPS5896781A publication Critical patent/JPS5896781A/ja
Publication of JPS6244873B2 publication Critical patent/JPS6244873B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Led Devices (AREA)
JP56195182A 1981-12-03 1981-12-03 半導体発光装置の製造方法 Granted JPS5896781A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56195182A JPS5896781A (ja) 1981-12-03 1981-12-03 半導体発光装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56195182A JPS5896781A (ja) 1981-12-03 1981-12-03 半導体発光装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5896781A true JPS5896781A (ja) 1983-06-08
JPS6244873B2 JPS6244873B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=16336807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195182A Granted JPS5896781A (ja) 1981-12-03 1981-12-03 半導体発光装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5896781A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2331625B (en) * 1997-11-19 2003-02-26 Hassan Paddy Abdel Salam led Lamp
KR100443738B1 (ko) * 2001-12-06 2004-08-09 삼성전기주식회사 거울 제작 방법
US6870191B2 (en) 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device
US7683386B2 (en) 2003-08-19 2010-03-23 Nichia Corporation Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
EP2280429A4 (en) * 2008-05-08 2011-06-08 Lg Innotek Co Ltd LIGHT-EMITTING ITEM

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2331625B (en) * 1997-11-19 2003-02-26 Hassan Paddy Abdel Salam led Lamp
US8148744B2 (en) 2001-07-24 2012-04-03 Nichia Corporation Semiconductor light emitting device
US8344402B2 (en) 2001-07-24 2013-01-01 Nichia Corporation Semiconductor light emitting device
US7635875B2 (en) 2001-07-24 2009-12-22 Nichia Corporation Semiconductor light emitting device
US8796721B2 (en) 2001-07-24 2014-08-05 Nichia Corporation Semiconductor light emitting device
US7745245B2 (en) 2001-07-24 2010-06-29 Nichia Corporation Semiconductor light emitting device
US7804101B2 (en) 2001-07-24 2010-09-28 Nichia Corporation Semiconductor light-emitting device
US8299486B2 (en) 2001-07-24 2012-10-30 Nichia Corporation Semiconductor light emitting device
US10593833B2 (en) 2001-07-24 2020-03-17 Nichia Corporation Semiconductor light emitting device
US9865773B2 (en) 2001-07-24 2018-01-09 Nichia Corporation Semiconductor light emitting device
US8344403B2 (en) 2001-07-24 2013-01-01 Nichia Corporation Semiconductor light emitting device
US6870191B2 (en) 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device
US10396242B2 (en) 2001-07-24 2019-08-27 Nichia Corporation Semiconductor light emitting device
US8227280B2 (en) 2001-07-24 2012-07-24 Nichia Corporation Semiconductor light emitting device
US9368681B2 (en) 2001-07-24 2016-06-14 Nichia Corporation Semiconductor light emitting device
KR100443738B1 (ko) * 2001-12-06 2004-08-09 삼성전기주식회사 거울 제작 방법
US8119534B2 (en) 2003-08-19 2012-02-21 Nichia Corporation Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
US7683386B2 (en) 2003-08-19 2010-03-23 Nichia Corporation Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
EP2280429A4 (en) * 2008-05-08 2011-06-08 Lg Innotek Co Ltd LIGHT-EMITTING ITEM
US8395174B2 (en) 2008-05-08 2013-03-12 Lg Innotek Co., Ltd. Light-emitting element
CN102646771A (zh) * 2008-05-08 2012-08-22 Lg伊诺特有限公司 发光器件
US8013353B2 (en) 2008-05-08 2011-09-06 Lg Innotek Co., Ltd. Light-emitting element

Also Published As

Publication number Publication date
JPS6244873B2 (enrdf_load_stackoverflow) 1987-09-22

Similar Documents

Publication Publication Date Title
US3968564A (en) Alignment of optical fibers to light emitting diodes
JP5542871B2 (ja) 光取出率を改善するための発光デバイスにおける光学エレメントの形成
CN111164766B (zh) 一种制作半导体发光元件的方法
US20040195641A1 (en) Semiconductor chip for optoelectronics
JP2989373B2 (ja) 光電変換装置の製造方法
JPS5896781A (ja) 半導体発光装置の製造方法
JPH05326900A (ja) 固体撮像装置とその製造方法
CN204333022U (zh) 倒装led芯片结构
JPS5932073B2 (ja) 発光ダイオ−ドおよびその製造方法
WO2006075427A1 (ja) 裏面接合型太陽電池及びその製造方法
JP3073833B2 (ja) 太陽電池の製造方法
JPH01503664A (ja) 被覆層構造物
JP2585403B2 (ja) 太陽電池の製造方法
JPS6244865B2 (enrdf_load_stackoverflow)
CN208596682U (zh) 一种背入式雪崩光电探测器芯片
TW202229931A (zh) 菲涅耳透鏡之形成方法
JPH0645646A (ja) ｐ−ｎヘテロ接合を有する赤外発光ダイオード及びその製造方法
CN111628022A (zh) GaAs基光电器件及其阵列的制备方法
JPS58220446A (ja) 化合物半導体装置の製造方法
JPS59100582A (ja) 半導体素子の製造方法
JPS61203692A (ja) 半導体レ−ザ装置の製造方法
JPS63111680A (ja) 半導体受光素子の製造方法
CN208596693U (zh) 一种Be离子扩散保护环雪崩光电探测器芯片
CN115775859A (zh) 改善光串扰的发光二极管及其制备方法
JPS58223382A (ja) 半導体発光装置