JPS5893287A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5893287A
JPS5893287A JP56192180A JP19218081A JPS5893287A JP S5893287 A JPS5893287 A JP S5893287A JP 56192180 A JP56192180 A JP 56192180A JP 19218081 A JP19218081 A JP 19218081A JP S5893287 A JPS5893287 A JP S5893287A
Authority
JP
Japan
Prior art keywords
film
insulating film
recess
forming
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56192180A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0370386B2 (enrdf_load_stackoverflow
Inventor
Tetsunori Wada
哲典 和田
Makoto Dan
檀 良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56192180A priority Critical patent/JPS5893287A/ja
Publication of JPS5893287A publication Critical patent/JPS5893287A/ja
Publication of JPH0370386B2 publication Critical patent/JPH0370386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Element Separation (AREA)
JP56192180A 1981-11-30 1981-11-30 半導体装置の製造方法 Granted JPS5893287A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56192180A JPS5893287A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192180A JPS5893287A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5893287A true JPS5893287A (ja) 1983-06-02
JPH0370386B2 JPH0370386B2 (enrdf_load_stackoverflow) 1991-11-07

Family

ID=16287003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192180A Granted JPS5893287A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5893287A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141346A (ja) * 1986-12-03 1988-06-13 Sony Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141346A (ja) * 1986-12-03 1988-06-13 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0370386B2 (enrdf_load_stackoverflow) 1991-11-07

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