JPS5886781A - 多結晶シリコンウエハの製造方法 - Google Patents

多結晶シリコンウエハの製造方法

Info

Publication number
JPS5886781A
JPS5886781A JP56184812A JP18481281A JPS5886781A JP S5886781 A JPS5886781 A JP S5886781A JP 56184812 A JP56184812 A JP 56184812A JP 18481281 A JP18481281 A JP 18481281A JP S5886781 A JPS5886781 A JP S5886781A
Authority
JP
Japan
Prior art keywords
melt
peripheral edge
nozzle
gas
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56184812A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328818B2 (cs
Inventor
Shinichi Yagihashi
八木橋　伸一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoxan Corp
Hokusan Co Ltd
Original Assignee
Hoxan Corp
Hokusan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoxan Corp, Hokusan Co Ltd filed Critical Hoxan Corp
Priority to JP56184812A priority Critical patent/JPS5886781A/ja
Priority to US06/373,039 priority patent/US4561486A/en
Priority to AU83147/82A priority patent/AU562656B2/en
Priority to EP82302246A priority patent/EP0065373B1/en
Priority to DE8282302246T priority patent/DE3277974D1/de
Publication of JPS5886781A publication Critical patent/JPS5886781A/ja
Publication of JPH0328818B2 publication Critical patent/JPH0328818B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP56184812A 1981-04-30 1981-11-18 多結晶シリコンウエハの製造方法 Granted JPS5886781A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56184812A JPS5886781A (ja) 1981-11-18 1981-11-18 多結晶シリコンウエハの製造方法
US06/373,039 US4561486A (en) 1981-04-30 1982-04-29 Method for fabricating polycrystalline silicon wafer
AU83147/82A AU562656B2 (en) 1981-04-30 1982-04-29 Fabricating polycrystalline silicon wafers
EP82302246A EP0065373B1 (en) 1981-04-30 1982-04-30 Method fabricating a polycrystalline silicon wafer
DE8282302246T DE3277974D1 (en) 1981-04-30 1982-04-30 Method fabricating a polycrystalline silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56184812A JPS5886781A (ja) 1981-11-18 1981-11-18 多結晶シリコンウエハの製造方法

Publications (2)

Publication Number Publication Date
JPS5886781A true JPS5886781A (ja) 1983-05-24
JPH0328818B2 JPH0328818B2 (cs) 1991-04-22

Family

ID=16159714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56184812A Granted JPS5886781A (ja) 1981-04-30 1981-11-18 多結晶シリコンウエハの製造方法

Country Status (1)

Country Link
JP (1) JPS5886781A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9147786B2 (en) 2008-05-05 2015-09-29 Dow Global Technologies Llc Photovoltaic device assembly and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9147786B2 (en) 2008-05-05 2015-09-29 Dow Global Technologies Llc Photovoltaic device assembly and method
US10121911B2 (en) 2008-05-05 2018-11-06 Dow Global Technologies Llc Photovoltaic device assembly and method

Also Published As

Publication number Publication date
JPH0328818B2 (cs) 1991-04-22

Similar Documents

Publication Publication Date Title
US4330358A (en) Method of producing plate- or tape-shaped silicon crystal bodies having crystalline pillar-like structures therein, equivalent to _crystalline columnar structures, for large surface solar cells
US4382838A (en) Novel silicon crystals and process for their preparation
US6334603B1 (en) Mold for producing silicon ingot and method for fabricating the same
JP3885452B2 (ja) 結晶シリコンの製造方法
EP0065373A1 (en) Method fabricating a polycrystalline silicon wafer
JP4347916B2 (ja) 坩堝およびその製造方法
JP2004058075A (ja) 鋳造装置及び鋳造方法
JPH05286791A (ja) 浮遊帯溶融法による結晶の製造方法及び製造装置
CN1099434A (zh) 半导体棒材或块材的生产方法及设备
JPS63166711A (ja) 多結晶シリコン鋳塊の製造法
JPH04342409A (ja) 金属ウエハーの生産のためのプロセスとシリコンウエハーの使用
JPS5886781A (ja) 多結晶シリコンウエハの製造方法
US4519764A (en) Apparatus for fabricating polycrystalline silicon wafer
JP6401051B2 (ja) 多結晶シリコンインゴットの製造方法
JP3798907B2 (ja) シリコン単結晶製造用石英ガラスるつぼおよび その製造方法
JPS5899115A (ja) 多結晶シリコンインゴツトの鋳造方法
JP4003197B2 (ja) 多結晶シリコン塊の製造装置および製造方法
JPH0142339Y2 (cs)
JPS58162029A (ja) 多結晶シリコンウエハの製造方法
JP2558171Y2 (ja) 単結晶引き上げ用熱遮蔽体
JPH046088B2 (cs)
JPH07215714A (ja) 多結晶シリコン製造方法および多結晶シリコン製造用坩堝
JPH0314765B2 (cs)
JPS59181013A (ja) 多結晶シリコンウエハの製造方法
JPS58162035A (ja) 多結晶シリコンウエハの製造方法