JPS5886723A - 半導体結晶の成長装置 - Google Patents

半導体結晶の成長装置

Info

Publication number
JPS5886723A
JPS5886723A JP56184804A JP18480481A JPS5886723A JP S5886723 A JPS5886723 A JP S5886723A JP 56184804 A JP56184804 A JP 56184804A JP 18480481 A JP18480481 A JP 18480481A JP S5886723 A JPS5886723 A JP S5886723A
Authority
JP
Japan
Prior art keywords
plate
solute
crystal
gaas
tanks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56184804A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0218576B2 (show.php
Inventor
Yuichi Ide
雄一 井手
Isamu Sakuma
勇 佐久間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56184804A priority Critical patent/JPS5886723A/ja
Publication of JPS5886723A publication Critical patent/JPS5886723A/ja
Publication of JPH0218576B2 publication Critical patent/JPH0218576B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3421—
    • H10P14/265—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56184804A 1981-11-18 1981-11-18 半導体結晶の成長装置 Granted JPS5886723A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56184804A JPS5886723A (ja) 1981-11-18 1981-11-18 半導体結晶の成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56184804A JPS5886723A (ja) 1981-11-18 1981-11-18 半導体結晶の成長装置

Publications (2)

Publication Number Publication Date
JPS5886723A true JPS5886723A (ja) 1983-05-24
JPH0218576B2 JPH0218576B2 (show.php) 1990-04-26

Family

ID=16159577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56184804A Granted JPS5886723A (ja) 1981-11-18 1981-11-18 半導体結晶の成長装置

Country Status (1)

Country Link
JP (1) JPS5886723A (show.php)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59128730U (ja) * 1983-02-18 1984-08-30 三洋電機株式会社 液相成長装置
JPS622528A (ja) * 1985-06-27 1987-01-08 Matsushita Electric Ind Co Ltd 液相エピタキシヤル成長溶液の製造装置
US4755364A (en) * 1986-05-29 1988-07-05 Rockwell International Corporation Liquid phase epitaxy apparatus and method
CN104562186A (zh) * 2014-12-09 2015-04-29 中国科学院上海技术物理研究所 一种应用于液相外延生长的组合式纯化母液的方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59128730U (ja) * 1983-02-18 1984-08-30 三洋電機株式会社 液相成長装置
JPS622528A (ja) * 1985-06-27 1987-01-08 Matsushita Electric Ind Co Ltd 液相エピタキシヤル成長溶液の製造装置
US4755364A (en) * 1986-05-29 1988-07-05 Rockwell International Corporation Liquid phase epitaxy apparatus and method
CN104562186A (zh) * 2014-12-09 2015-04-29 中国科学院上海技术物理研究所 一种应用于液相外延生长的组合式纯化母液的方法

Also Published As

Publication number Publication date
JPH0218576B2 (show.php) 1990-04-26

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