JPS5879724A - Method of seal-molding semiconductor chip in resin and resin material therefor - Google Patents
Method of seal-molding semiconductor chip in resin and resin material thereforInfo
- Publication number
- JPS5879724A JPS5879724A JP17881681A JP17881681A JPS5879724A JP S5879724 A JPS5879724 A JP S5879724A JP 17881681 A JP17881681 A JP 17881681A JP 17881681 A JP17881681 A JP 17881681A JP S5879724 A JPS5879724 A JP S5879724A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor chip
- resin material
- lead frame
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 70
- 239000011347 resin Substances 0.000 title claims abstract description 70
- 239000000463 material Substances 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000000465 moulding Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000005538 encapsulation Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 239000012778 molding material Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C70/00—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts
- B29C70/68—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts by incorporating or moulding on preformed parts, e.g. inserts or layers, e.g. foam blocks
- B29C70/72—Encapsulating inserts having non-encapsulated projections, e.g. extremities or terminal portions of electrical components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
- B29L2031/3406—Components, e.g. resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、半導体チップの樹脂封入成形方法とこれに
用いられる樹脂素材に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resin encapsulation molding method for a semiconductor chip and a resin material used therein.
ところで、従来の半導体樹脂封入成形方法としては、例
えば、半導体チップを取り付けたリードフレームを上下
両金型間に装着すると共に、両型面に構成されるキャビ
ティ内Ｇこ溶量φ樹脂を注入してその封入成形を行なう
ようにしている。従って、を記キャビティ内へ浴融樹脂
を圧送Ｔるための手段、例えば、プランジャー、ポット
、ランナー及びゲート等を必要とする他、これらの附属
手段の高精度化若しくは複雑化を来している。By the way, as a conventional semiconductor resin encapsulation molding method, for example, a lead frame to which a semiconductor chip is attached is mounted between upper and lower molds, and an amount of φ resin is injected into the cavity formed on both mold surfaces. Then, the encapsulation molding is performed. Therefore, in addition to requiring means for pressure-feeding the molten resin into the cavity, such as a plunger, pot, runner, and gate, these additional means become highly precise or complicated. There is.
また、上述した樹脂封入成形に用いられる成形材料が熱
硬化性樹脂である場合は、ポットからゲートに至る成形
材料の供給移送経路中に再−生別用不可能な多量の材料
が残存硬化して、成形材料の全体的利用率が著しく低下
して極めて不経済なものであった。Furthermore, if the molding material used in the resin encapsulation molding described above is a thermosetting resin, a large amount of material that cannot be recycled remains and hardens in the supply and transfer path of the molding material from the pot to the gate. As a result, the overall utilization rate of the molding material was significantly reduced, making it extremely uneconomical.
本発明方法は、上述したような従来方法とは基本的に相
違する半導体チップの樹脂封入成形方法とこれに用いら
れる樹脂素材に関するものであって、高能率生産と、樹
脂材料の大幅な節減化を目的とするものであり、以下こ
れを実施例図に基づいて説明Ｔる。The method of the present invention relates to a resin encapsulation molding method for semiconductor chips and a resin material used therein, which is fundamentally different from the conventional method as described above, and allows for highly efficient production and significant savings in resin materials. This will be explained below based on the drawings of the embodiments.
第１図乃至第３図において、１は半導体チップ２を取り
付けたリードフレーム、３は該リードフレームのチップ
２側及びその反対側に一体化された樹脂、Ａは上型４及
び下型５を有する金型装置で、該両型の対向両面には所
要形状に形成されたキャビティ部４ａ・５ａ が設けら
れており、また、この両型は適当な加熱手段（図示なし
）を介して所要温度に加熱可能として設けられている。1 to 3, 1 is a lead frame to which a semiconductor chip 2 is attached, 3 is a resin integrated on the chip 2 side and the opposite side of the lead frame, and A is an upper die 4 and a lower die 5. Cavity parts 4a and 5a formed in a desired shape are provided on opposite surfaces of both molds, and both molds are heated to a required temperature via appropriate heating means (not shown). It is provided so that it can be heated.
３ａ・３ｂはリードフレーム１の両面Ｇこ一体化させる
ための樹脂素材であって、これらの素材は数体、Ｇこ、
例えば、第２図に示すように、リードフレームｌの両面
昏こ所要形状として一体化される樹脂３・３と相似する
形状として予め二分割形成されると共に、その一方の素
材３ａにおけるリードフレーム１側との摺接面６には、
凹所７が設けられており、該摺接面とリードフレームに
おけるチップ２の取付面側とを接合させたとき、該チッ
プ及び接続用ワイヤ８が上記凹所７内に嵌合されて、こ
れらが素材３ａと接触しないようにされている。3a and 3b are resin materials for integrating both sides of the lead frame 1.
For example, as shown in FIG. 2, the lead frame 1 is formed in advance into two halves with shapes similar to the resins 3 and 3 that are integrated as the desired shape on both sides of the lead frame l, and the lead frame 1 in one of the materials 3a. On the sliding surface 6 with the side,
A recess 7 is provided, and when the sliding contact surface and the mounting surface of the chip 2 on the lead frame are joined, the chip and the connecting wire 8 are fitted into the recess 7, and these is prevented from coming into contact with the material 3a.
なお、上記樹脂素材３ａ・３ｂ の総量は、これらを加
熱溶融した際に、上下両型の型締時におけるキャビティ
部４ａ・５ａ の容量と略同じになるように膜室して
おけばよ（、また、各素材３ａ・３ｂ の形状を保持さ
せる保形手段としては、例えば、樹脂パウダーを常温に
て所要形状Ｏこ同化させるもの、或は、樹脂パウダーを
通常成形温度に達しない温度、例えば、略５０°Ｃ〜１
．３０℃の温度にて加熱することにより所要形状に固化
させるもの等のいずれを採用してもよい。It should be noted that the total amount of the resin materials 3a and 3b should be made into a membrane chamber so that when they are heated and melted, the volume is approximately the same as the capacity of the cavity portions 4a and 5a when both the upper and lower molds are clamped. In addition, the shape retaining means for maintaining the shape of each of the materials 3a and 3b may be, for example, one that assimilates the resin powder into the desired shape at room temperature, or one that assimilates the resin powder at a temperature that does not reach the normal molding temperature, for example. , approximately 50°C ~ 1
．． Any material that can be solidified into a desired shape by heating at a temperature of 30° C. may be used.
次に、上記樹脂素材３ａ・３ｂを用いて半導体チップ２
（及びワイヤ８）の樹脂封入作用を説明する。Next, the semiconductor chip 2 is made using the resin materials 3a and 3b.
The effect of enclosing the resin (and the wire 8) will be explained.
まず、両型４・５の型開きを行なった後Ｏこ、第３図に
示すように、その下型キャビティ部りａ内にチップ２の
嵌合用凹所７を有しなｌ、Ｎ樹脂素材３ｂを嵌入し、次
に、この素材上にリードフレーム１をそのチップ２取付
面側が上面となる状態で載置し、次に、リードフレーム
１１【こ他方の樹脂素材３ａ を載置する。然して、こ
のとき、同図（■）＆こ示すように、他方の樹脂素材３
ａの摺接面６Ｇこ設番すた凹所７内にリードフレームの
チップ２を嵌合させることもこより、両者は互Ｉｌ）＆
こ接触しなｌ、）状態として接合載置されるのであるか
、このような１）−ドフレーム１と各樹脂素材３ａ・３
ｂの嵌入載置手段及び位置決め手段は適当な自動化機構
を併用することによって確実に且つ効率良（行なシ）１
尋るものである。次に、上記した状態で型締めを行なう
と共に、両型４・５を適当な加熱手段を介してカロ熱し
、その両キャビティ部４ａ・５ａ 内の各樹ｌｌ旨素材
３ａ・３ｂを通常成形温度以上、例えば、略１７０°Ｃ
の温度まで加熱すると、上記各素材３ａ・３ｂは溶融し
て、同図（ＩＩ）に示すように、両キャビティ部４ａ・
５ａによる所要形状に成形されると共に、リードフレー
ム上の半導体チップ２を樹脂封入することとなるのであ
る。First, after opening both molds 4 and 5, as shown in FIG. The material 3b is fitted, and then the lead frame 1 is placed on this material with its chip 2 mounting surface facing upward, and then the lead frame 11 [the other resin material 3a] is placed thereon. However, at this time, as shown in the same figure (■) & shown here, the other resin material 3
Since the chip 2 of the lead frame can also be fitted into the sliding contact surface 6G of a and the recess 7, the two are mutually compatible.
Is the frame 1 and each resin material 3a, 3 bonded and placed in a non-contact state?
The insertion and placement means and positioning means (b) can be carried out reliably and efficiently by using an appropriate automated mechanism.
It is something to ask. Next, the molds are clamped in the above-mentioned state, and both molds 4 and 5 are heated by appropriate heating means, and the respective wood materials 3a and 3b in both cavity parts 4a and 5a are heated to the normal molding temperature. For example, approximately 170°C
When heated to a temperature of
5a, and the semiconductor chip 2 on the lead frame is encapsulated in resin.
以下、第４図に示す他の実施例について説明する。Another embodiment shown in FIG. 4 will be described below.
同図（１）及び（Ｉｔ）に示された金型装置は前記した
実施例図のものと同じであるが、上下両型４・５（こ加
圧用プランジャー９・１０が夫々設けられている点にお
いて相違するものである。即ち、上記各プランジャー９
・１０は両キャビティ部４ａ・５ａ内と連通するように
設けられた挿通孔４ｂ・５ｂ内昏こ各嵌合されると共（
こ、これらの両プランジャーは適当な往復動機構（図示
なし）を介して、上記キャビティ部４ａ・５ａ側へ夫々
往復動可能な状態として設けられている。The mold apparatus shown in FIG. They are different in that each plunger 9 is
・10 is fitted into the insertion holes 4b and 5b provided to communicate with the insides of both cavities 4a and 5a, and (
Both plungers are provided so as to be able to reciprocate toward the cavities 4a and 5a, respectively, via appropriate reciprocating mechanisms (not shown).
従って、該実施例においては、前記実施例における型締
め後（こおいて、両プランジャー９・１０をキャビティ
部４ａ・５ａ 側へ往動させることよって、該キャビテ
ィ部内の溶融樹脂を加圧することが可能となるのである
。Therefore, in this embodiment, after the mold clamping in the above embodiment (here, both plungers 9 and 10 are moved toward the cavity parts 4a and 5a to pressurize the molten resin in the cavity part). becomes possible.
以上のように、本発明方法は、上下両型間におけるキャ
ビティ部に対して装着される半導体チップを有するリー
ドフレームの上下両面側に、予め数体に分割形成された
樹脂素材を夫々供給し、この状態で上記樹脂素材を加熱
溶融することによって、上記半導体チップを樹脂封入す
るもの、及び上下両型間におけるキャビティ部に対して
装着される半導体チップを有するリードフレームの上下
両面側に、予め数体に分割形成された樹脂素材を夫々供
給し、この状態で一ヒ記樹脂素材を加熱浴融すると共に
、上記キャビティ部内の溶融樹脂を加圧することによっ
て、上記半導体チップを樹脂封入するものであり、また
、本発明方法の実施に用いられる樹脂素材は、所要量の
樹脂パウダーを通常ＩＮ形を品度Ｏこ達しない温度にて
加熱することによって所要形状に固化形成するものであ
るから、このような本発明方法によれば、従来方法と較
べて、樹脂封入成形方法を著しく簡略化することができ
るのみならす、構成簡易な金型装置による実施が可能と
なる。また、キャビティ部内における溶融樹脂の加圧を
行なうときは、半導体チップの樹脂封入による気密性を
更に向上させ得るといった効用がある。更に、本発明樹
脂素材は所要の樹脂量と所要形状の保形力とを有してい
るため、キャビティ部内への供給樹脂量を常に一定に保
ち得て、樹脂量の過不足（こ起因した不良成形品の発生
を未然に防止することができると共に、前述したような
残存樹脂の発生が無いため成形樹脂材料の大幅な節減を
行ない得て極めて経済的であり、また、その取扱いが容
易となって樹脂封入成形の全体的作業能率を著しく向上
することかできる等の優れた効果を奏するものである。As described above, the method of the present invention includes supplying a resin material divided into several parts in advance to both upper and lower surfaces of a lead frame having a semiconductor chip mounted in a cavity between upper and lower molds, respectively. By heating and melting the resin material in this state, a number of predetermined numbers are preliminarily placed on both upper and lower sides of the lead frame that has the semiconductor chip encapsulated in the resin and the semiconductor chip that is mounted in the cavity between the upper and lower molds. The semiconductor chip is encapsulated in the resin by supplying the resin materials separately formed into the body, melting the resin materials in a heating bath in this state, and pressurizing the molten resin in the cavity. Furthermore, the resin material used in the method of the present invention is solidified into the desired shape by heating the required amount of resin powder at a temperature that does not reach the standard IN type. According to the method of the present invention, the resin encapsulation molding method can be significantly simplified compared to the conventional method, and it can be carried out using a mold device with a simple configuration. Furthermore, when pressurizing the molten resin within the cavity, there is an effect that the airtightness of the semiconductor chip encapsulated in the resin can be further improved. Furthermore, since the resin material of the present invention has the required amount of resin and ability to retain the required shape, it is possible to always keep the amount of resin supplied into the cavity constant, and to prevent excess or deficiency of resin (due to this). In addition to being able to prevent the occurrence of defective molded products, since there is no residual resin as mentioned above, the amount of molding resin material can be greatly reduced, making it extremely economical and easy to handle. This brings about excellent effects such as significantly improving the overall working efficiency of resin encapsulation molding.
第１図乃至第３図は本発明の実施例を示すもので、第１
図は半導体チップの樹脂封入成形品を示す一部切欠正面
図、第２図は本発明方法に用いられる樹脂素材の一部切
欠斜視図、第３図は本発明方法の説明図で、同図（Ｉ）
は樹脂素材の加熱前における金型装置要部の断面図、同
図（ＩＩ）は樹脂素材を加熱溶融した型締時における金
型装置要部の断面図、第４図は他の実施例における発明
方法の説明図で、同図（Ｉ）は松脂素材の加熱前におけ
る金型装置要部の断面図、同図（ｎ）は樹脂素材を加熱
浴融し且つ加圧した状態を示す型締時における金型装置
要部の断面図である。
Ａ・・・金型装置、ｌ・・リードフレーム、２・・・半
導体チップ、３ａ・３ｂ 樹脂素材、４・上型、５・
・下型、４ａ・５ａ・・・キャビティ部、９・１０・・
プランジャー。
第５図1 to 3 show embodiments of the present invention.
The figure is a partially cutaway front view showing a resin-filled molded product of a semiconductor chip, FIG. 2 is a partially cutaway perspective view of a resin material used in the method of the present invention, and FIG. (I)
4 is a cross-sectional view of the main part of the mold device before heating the resin material, FIG. The figure (I) is a cross-sectional view of the main part of the mold device before heating the pine resin material, and the figure (n) is a mold clamping diagram showing the state in which the resin material is melted in a heating bath and pressurized. FIG. A...Mold device, l...Lead frame, 2...Semiconductor chip, 3a/3b resin material, 4.Upper mold, 5.
・Lower mold, 4a/5a...cavity part, 9/10...
Plunger. Figure 5
Claims (4)
れる半導体チップを有するリードフレームの上下両面側
に、予め数体に分割形成された樹脂素材を夫々供給し、
この状態で上記樹脂素材を加熱Ｉ＠融することによって
、上記半導体チップを樹脂封入Ｔることを特徴とする半
導体チップの樹脂封入成形方法。(1) Supplying a resin material divided into several parts in advance to the upper and lower surfaces of a lead frame having a semiconductor chip mounted in a cavity between the upper and lower molds, respectively;
A method for resin-encapsulating a semiconductor chip, characterized in that the semiconductor chip is encapsulated in resin by heating and melting the resin material in this state.
プを有するリードフレームと、予め数体に分割形成され
た。Ｌ記チップ封入用の樹脂素材とを嵌入するに際して
、リードフレームの半導体チップと上記樹脂素材とが接
触しない状態として接合載置し、上記した状態で型締め
を行なうと共に、上記樹脂素材を加熱熔融してキャビテ
ィ部による成形を行なうことにより、上記半導体チップ
を樹脂封入することを特徴とする特許請求の範囲第（１
）項記載の成形方法。(2) A lead frame having a semiconductor chip was formed in advance into several pieces in the cavity portion of both the upper and lower molds. When inserting the resin material for chip encapsulation in L, the semiconductor chip of the lead frame and the resin material are placed together so that they do not come into contact with each other, and the mold is clamped in the above state, and the resin material is heated and melted. Claim 1, characterized in that the semiconductor chip is encapsulated in resin by molding in a cavity.
) Molding method described in section.
れる半導体チップを有するリードフレームの上下両面側
に、予め数体に分割形成された樹脂素材を夫々供給し、
この状態で上記樹脂素材を加熱溶融すると共に、上記キ
ャビティ部内の溶融樹脂を加圧することによって、上記
半導体チップを樹脂封入することを特徴とする半導体チ
ップの樹脂封入成形方法。(3) Supplying a resin material divided into several parts in advance to the upper and lower surfaces of a lead frame having a semiconductor chip to be mounted in the cavity between the upper and lower molds, respectively;
A method for resin-encapsulating a semiconductor chip, characterized in that the semiconductor chip is encapsulated in resin by heating and melting the resin material in this state and pressurizing the molten resin in the cavity.
温度にて加熱することによって所要形状に固化形成して
成る半導体チップの樹脂封入成形用の樹脂素材。(4) A resin material for resin-encapsulation molding of semiconductor chips, which is made by heating a required amount of resin powder at a temperature below the normal molding temperature to solidify it into a desired shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17881681A JPS5879724A (en) | 1981-11-06 | 1981-11-06 | Method of seal-molding semiconductor chip in resin and resin material therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17881681A JPS5879724A (en) | 1981-11-06 | 1981-11-06 | Method of seal-molding semiconductor chip in resin and resin material therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5879724A true JPS5879724A (en) | 1983-05-13 |
| JPS6227540B2 JPS6227540B2 (en) | 1987-06-15 |
Family
ID=16055156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17881681A Granted JPS5879724A (en) | 1981-11-06 | 1981-11-06 | Method of seal-molding semiconductor chip in resin and resin material therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5879724A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5423659A (en) * | 1977-07-22 | 1979-02-22 | Hitachi Ltd | Encapsulation with resin |
| JPS5544453A (en) * | 1978-09-23 | 1980-03-28 | Enzeru Kogyo Kk | Hoist crane controll switch |
| JPS5610760A (en) * | 1979-07-06 | 1981-02-03 | Toshiba Corp | Transmission system |
| JPS5631004U (en) * | 1979-08-16 | 1981-03-26 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5631004B2 (en) * | 1971-10-06 | 1981-07-18 |
-
1981
- 1981-11-06 JP JP17881681A patent/JPS5879724A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5423659A (en) * | 1977-07-22 | 1979-02-22 | Hitachi Ltd | Encapsulation with resin |
| JPS5544453A (en) * | 1978-09-23 | 1980-03-28 | Enzeru Kogyo Kk | Hoist crane controll switch |
| JPS5610760A (en) * | 1979-07-06 | 1981-02-03 | Toshiba Corp | Transmission system |
| JPS5631004U (en) * | 1979-08-16 | 1981-03-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6227540B2 (en) | 1987-06-15 |
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