JPS587887A - Photosemiconductor device - Google Patents
Photosemiconductor deviceInfo
- Publication number
- JPS587887A JPS587887A JP56105398A JP10539881A JPS587887A JP S587887 A JPS587887 A JP S587887A JP 56105398 A JP56105398 A JP 56105398A JP 10539881 A JP10539881 A JP 10539881A JP S587887 A JPS587887 A JP S587887A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- stem
- resin
- cost
- welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Description
【発明の詳細な説明】
本発明は半導体発光装置、半導体発光装置に関し１．Ｉ
Ｋ詳しくはステムの加熱により中ヤップを封止し九構造
の光半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light emitting device and a semiconductor light emitting device.1. I
Specifically, the present invention relates to an optical semiconductor device having a nine-structure structure in which the inner cap is sealed by heating the stem.
従来、ガラス封止の光半導体装置は図ＩＫ示す様にテッ
プｌがマウントされたステム２と、窓を形成しているガ
ラス３が接着され九午ヤップ４とを部分ＡＫて溶接封止
していた。この溶接封止はキャップ４を治具にセットし
、筐たステム２を治具セットし、そして溶接された素子
を治具から取〕はずす（圧力を加えるので治ＡＫ＜い込
んでいる）などの作業の丸め、量産性に乏しいこと、ま
九これらの作業が窒素ボックス中で行われるという作業
性の悪さなどの欠点がＴｏりた〇
本発明は作業工数の低減、量産性の向上１部材の低価格
化を意図したものである。Conventionally, in a glass-sealed optical semiconductor device, as shown in Figure IK, a stem 2 on which a tip 1 is mounted and a glass 3 forming a window 4 are bonded and sealed by welding. Ta. This welding sealing is done by setting the cap 4 in a jig, setting the cased stem 2 in the jig, and removing the welded element from the jig (pressure is applied, so the jig is embedded), etc. There are many disadvantages such as rounding of work, poor mass productivity, and poor workability as these operations are performed in a nitrogen box.The present invention reduces the number of work steps and improves mass productivity. It is intended to lower the price of
この目的は、本発ｗＡＫよれば、透明部を有する樹脂製
キャップを、ステムＯ加熱によ〕溶着することによりて
封止したことを特徴とする光半導体装置とすることによ
り達成される〇
以下、図面に示し九実施例を参照して本発明を詳述しよ
う〇
図２乃至［１４はいずれも本発明ＯｇＡ施例になる光半
導体装置の断面図である。According to the present wAK, this object is achieved by providing an optical semiconductor device characterized in that a resin cap having a transparent portion is sealed by welding with stem O heating. The present invention will now be described in detail with reference to nine embodiments shown in the drawings. Figures 2 to 14 are all cross-sectional views of optical semiconductor devices that are OgA embodiments of the present invention.
図２において、２はテップ１がマウントされたステムで
あ〕、これ自体は従来と同様である◎５はキャップであ
シ、透明樹脂より成る。本生導体素子Ｏ封止は窒素雰囲
気中でヒータ上にステムをによつて封止される。キャッ
プとステムの関が必ずしも同一面でなくても、曵キップ
を軽く押えることにより、全面溶着することが可能であ
る〇轟樹脂製キャップｌはモールドが可能で同じ形状の
４０が貴意できる。中ヤップはモールド蓋に対応するの
で１頁をも可能である・発光素子、受光素子とも指向特
性を持たす丸めレンズを用いることがｈるが、轟樹脂＊
＊−ヤップはガラスと金属キャップの溶接が不要である
ため、コスト面で太いに８点がある。図３にレンズ付半
導体装置の断面を示す０６はレンズ部である＠キャップ
の樹脂材料としてはメタアクリル、塩化ビニールなどが
用いられるが、必要な波長に対して透明であれはどの様
な材料でもよい。ま大所望の光路のみ透明でそれ以外は
遮光という中ヤップも可能である０１１４に例を示す０
斜線を施した遮光部７は他の樹脂材料を使用しても差し
障えないし、同一材料で不透明不純物をドービ／グ、ｔ
たは混入してもよい０遇一部８Ｆｉレンズ作用もなす。In FIG. 2, 2 is a stem on which the tip 1 is mounted], which itself is the same as the conventional one. ◎5 is a cap, which is made of transparent resin. The raw conductor element O is sealed with a stem above the heater in a nitrogen atmosphere. Even if the connection between the cap and the stem is not necessarily on the same surface, it is possible to weld the entire surface by lightly pressing the cap. The cap made of Todoroki resin can be molded, and 40 with the same shape is preferable. Since the middle cover is compatible with the molded lid, even one page is possible. - Round lenses with directional characteristics can be used for both the light-emitting element and the light-receiving element, but Todoroki resin *
*- YAP does not require welding of the glass and metal cap, so it has eight points in terms of cost. Figure 3 shows a cross section of a semiconductor device with a lens. 06 is the lens part. Methacrylic, vinyl chloride, etc. are used as the resin material for the cap, but any material can be used as long as it is transparent to the required wavelength. good. It is also possible to make only the desired optical path transparent and block the rest.An example is shown in 0114.
The shaded portion 7 may be made of other resin materials, or the same material may be used to remove opaque impurities.
It may also be used as an 8Fi lens.
画先半導体装置ａ従来めものと比して、窒素封入中光学
的特性など変わりはない◎接着剤などの補助材料をも必
要とせず少ない工数で組み立てられる。ヒータ（電熱も
しくは赤外線加熱）ブロックについてもステムを置く場
所な複数個設けるととによシ、連続処理（順送シする）
もしくは一括処理が可能であシ、大量生産に適している
。狗、ステム２の加熱には、誘導加熱を利用してもよい
し、赤外線、レーザーの如き輻射線を利用してもよい。Image tip semiconductor device a Compared to conventional devices, there is no change in optical properties during nitrogen encapsulation. ◎ No auxiliary materials such as adhesives are required and assembly is possible with fewer man-hours. It is recommended to provide multiple heater (electric heating or infrared heating) blocks to place the stems, and continuous processing (sequential feeding) is recommended.
Alternatively, batch processing is possible, making it suitable for mass production. To heat the dog stem 2, induction heating may be used, or radiation such as infrared rays or laser may be used.
樹脂の溶着による封止の場合ステム２は１００〜ｂ
の影畳はない。この場合レーザーによってステム周囲の
樹脂を溶融すれば、ステムの加熱は抑えられる。−万、
キャップについては同一寸法のものが大量に出来、材料
も廉価であるため、本光半導体装置は従来品に較べて極
めて低コストである０図１は従来の光半導体装置の断圃
図、夢２乃至図４は本発明の各実施例罠なる光半導体装
置の断面図である。In the case of sealing by resin welding, the stem 2 does not have a shadow of 100-b. In this case, heating of the stem can be suppressed by melting the resin around the stem using a laser. Ten thousand,
Caps of the same size can be produced in large quantities and the materials are inexpensive, so the cost of this optical semiconductor device is extremely low compared to conventional products.0 Figure 1 is a cross-sectional diagram of a conventional optical semiconductor device. 4 to 4 are cross-sectional views of optical semiconductor devices according to each embodiment of the present invention.
図中、Ｈａｔ光半導体素子チップ、２はステム、５は樹
脂製キャップ、６はレンズ部、７は遮光部、図１
ｒＥＪ３ 。In the figure, a Hat optical semiconductor element chip, 2 a stem, 5 a resin cap, 6 a lens portion, and 7 a light shielding portion are shown in FIG. 1 rEJ3.
図２ １ｆｆ１４Figure 2 1ff14
Claims (1)
溶着するととによって封止したことを特休 黴とする光半導体装置。[Claims] An optical semiconductor device characterized in that a resin cap having a transparent portion is sealed by welding and welding a stem by heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56105398A JPS587887A (en) | 1981-07-06 | 1981-07-06 | Photosemiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56105398A JPS587887A (en) | 1981-07-06 | 1981-07-06 | Photosemiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS587887A true JPS587887A (en) | 1983-01-17 |
Family
ID=14406521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56105398A Pending JPS587887A (en) | 1981-07-06 | 1981-07-06 | Photosemiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS587887A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129476A (en) * | 1983-01-14 | 1984-07-25 | Matsushita Electric Ind Co Ltd | Photoelectric conversion device |
| JPS6327064U (en) * | 1986-08-06 | 1988-02-22 | ||
| JPS63108651U (en) * | 1986-12-27 | 1988-07-13 | ||
| JPS63253676A (en) * | 1987-04-10 | 1988-10-20 | Sony Corp | Light-emitting device |
| JPS6459972A (en) * | 1987-08-31 | 1989-03-07 | Nec Corp | Optical semiconductor device |
| US5436492A (en) * | 1992-06-23 | 1995-07-25 | Sony Corporation | Charge-coupled device image sensor |
| EP0976589A1 (en) * | 1997-03-18 | 2000-02-02 | Obschestvo S Ogranichennoy Otvetstvennostju "Korvet Lights" | Luminescent diode |
| JP2002520819A (en) * | 1998-06-30 | 2002-07-09 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Device for detecting electromagnetic beams |
| EP1926154A3 (en) * | 2006-11-21 | 2011-03-30 | Nichia Corporation | Semiconductor light emitting device |
-
1981
- 1981-07-06 JP JP56105398A patent/JPS587887A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129476A (en) * | 1983-01-14 | 1984-07-25 | Matsushita Electric Ind Co Ltd | Photoelectric conversion device |
| JPH0517890Y2 (en) * | 1986-08-06 | 1993-05-13 | ||
| JPS6327064U (en) * | 1986-08-06 | 1988-02-22 | ||
| JPS63108651U (en) * | 1986-12-27 | 1988-07-13 | ||
| JPH0517891Y2 (en) * | 1986-12-27 | 1993-05-13 | ||
| JPS63253676A (en) * | 1987-04-10 | 1988-10-20 | Sony Corp | Light-emitting device |
| JPS6459972A (en) * | 1987-08-31 | 1989-03-07 | Nec Corp | Optical semiconductor device |
| US5436492A (en) * | 1992-06-23 | 1995-07-25 | Sony Corporation | Charge-coupled device image sensor |
| EP0976589A1 (en) * | 1997-03-18 | 2000-02-02 | Obschestvo S Ogranichennoy Otvetstvennostju "Korvet Lights" | Luminescent diode |
| EP0976589A4 (en) * | 1997-03-18 | 2006-11-08 | Acol Technologies S A | Luminescent diode |
| JP2002520819A (en) * | 1998-06-30 | 2002-07-09 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Device for detecting electromagnetic beams |
| EP1926154A3 (en) * | 2006-11-21 | 2011-03-30 | Nichia Corporation | Semiconductor light emitting device |
| US8106414B2 (en) | 2006-11-21 | 2012-01-31 | Nichia Corporation | Semiconductor light emitting device |
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