JPH06291362A - Power semiconductor device - Google Patents
Power semiconductor deviceInfo
- Publication number
- JPH06291362A JPH06291362A JP7559893A JP7559893A JPH06291362A JP H06291362 A JPH06291362 A JP H06291362A JP 7559893 A JP7559893 A JP 7559893A JP 7559893 A JP7559893 A JP 7559893A JP H06291362 A JPH06291362 A JP H06291362A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- light
- shielding resin
- resin
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は電力半導体装置の構造、
特にその放熱構造の改良に関する。The present invention relates to a structure of a power semiconductor device,
Particularly, it relates to improvement of the heat dissipation structure.
【０００２】[0002]
【従来の技術】図４は従来の電力半導体装置を示す図で
あり、同図（ａ）は正面断面図であり、同図（ｂ）は上
面側からの透視図であり、同図（ｃ）は右側面断面図で
ある。2. Description of the Related Art FIG. 4 is a view showing a conventional power semiconductor device, FIG. 4 (a) is a front sectional view, FIG. 4 (b) is a perspective view from the upper side, and FIG. ) Is a right side sectional view.
【０００３】従来の電力半導体装置は、図４の如く、一
次側リードフレーム１と二次側リードフレーム２とから
なり、前記一次側リードフレーム１は、発光ダイオード
等の発光素子３を搭載する発光素子搭載用リードフレー
ム４とヒートシンク用リードフレーム５とを備え、前記
二次側リードフレーム２は、フォトトライアック等の受
光素子６を搭載する受光素子搭載用リードフレーム７と
トライアック素子，サイリスタ等の電力制御用半導体素
子８を搭載する電力制御用半導体素子搭載用リードフレ
ーム９とを備え、所望のフレーム−素子間がワイヤーに
て接続されている。As shown in FIG. 4, a conventional power semiconductor device is composed of a primary side lead frame 1 and a secondary side lead frame 2, and the primary side lead frame 1 has a light emitting element 3 such as a light emitting diode. A lead frame 4 for mounting an element and a lead frame 5 for a heat sink are provided, and the secondary side lead frame 2 has a lead frame 7 for mounting a light receiving element 6 for mounting a light receiving element 6 such as a phototriac, and power for a triac element, a thyristor and the like. A power control semiconductor element mounting lead frame 9 on which the control semiconductor element 8 is mounted is provided, and a desired frame-element is connected by a wire.
【０００４】さらに、前記一次側リードフレーム１及び
二次側リードフレーム２は、互いに相対向する位置に配
置され、前記一次側リードフレーム１及び二次側リード
フレーム２の一部を除く透光性樹脂１０にて封止され、
更に該透光性樹脂１０の外周は高熱伝導性の遮光性樹脂
１１にて封止されてなる構造である。Further, the primary side lead frame 1 and the secondary side lead frame 2 are arranged at positions opposite to each other, and the primary side lead frame 1 and the secondary side lead frame 2 are partially translucent. Sealed with resin 10,
Further, the outer periphery of the light-transmissive resin 10 is sealed with a light-shielding resin 11 having high thermal conductivity.
【０００５】[0005]
【発明が解決しようとする課題】上記構造の電力半導体
装置において、電力制御用半導体素子８は駆動時に高熱
を発する。従来の電力半導体装置はこの熱の放出を、透
光性樹脂１０を介して高熱伝導性の遮光性樹脂１１より
放熱するとともに、前記透光性樹脂１０を介してヒート
シンク用リードフレーム５で熱をひろい端子，及びさら
に透光性樹脂１０を介して前記遮光性樹脂１１より放熱
していた。In the power semiconductor device having the above structure, the power control semiconductor element 8 emits high heat when driven. In the conventional power semiconductor device, this heat emission is radiated from the light-shielding resin 11 having high thermal conductivity via the light-transmissive resin 10, and the heat is dissipated by the lead frame 5 for heat sink via the light-transmissive resin 10. Heat is radiated from the light-shielding resin 11 through the wide terminals and the light-transmitting resin 10.
【０００６】ところが、内方の封止材である前記透光性
樹脂１０は低熱伝導性であるため、前記電力制御用半導
体素子８で発生した熱を前記透光性樹脂１０を介して前
記遮光性樹脂１１に伝達し、該遮光性樹脂１１より放熱
していたのではあまり高い放熱性が望めず、電力半導体
装置としての熱抵抗が大きくなった。However, since the light-transmitting resin 10 as the inner sealing material has low thermal conductivity, the heat generated in the power control semiconductor element 8 is shielded through the light-transmitting resin 10. If it is transmitted to the heat-resistant resin 11 and radiates heat from the light-shielding resin 11, a very high heat-radiating property cannot be expected, and the thermal resistance of the power semiconductor device increases.
【０００７】本発明は、上記課題に鑑み、放熱性を向上
し、熱抵抗の低減が図れる電力半導体装置を提供するこ
とを目的とするものである。In view of the above problems, it is an object of the present invention to provide a power semiconductor device capable of improving heat dissipation and reducing thermal resistance.
【０００８】[0008]
【課題を解決するための手段】本発明の電力半導体装置
は、ヒートシンク用リードフレームを有する一次側リー
ドフレームと、二次側リードフレームとが透光性樹脂に
て封止され、該透光性樹脂部の外周が高熱伝導性の遮光
性樹脂にて封止されてなる電力半導体装置において、前
記ヒートシンク用リードフレームは、電力制御用半導体
素子搭載用リードフレーム接触部及び遮光性樹脂接触部
からなり、それぞれ各部は電力制御用半導体素子搭載用
リードフレーム及び遮光性樹脂と接触させてなることを
特徴とするものである。In a power semiconductor device of the present invention, a primary side lead frame having a heat sink lead frame and a secondary side lead frame are sealed with a translucent resin, and the translucent resin is used. In a power semiconductor device in which the outer periphery of a resin portion is sealed with a light-shielding resin having high thermal conductivity, the heat sink lead frame includes a power control semiconductor element mounting lead frame contact portion and a light-shielding resin contact portion. The respective parts are respectively in contact with the power control semiconductor element mounting lead frame and the light shielding resin.
【０００９】さらに、上記構成において、前記遮光性樹
脂接触部における遮光性樹脂接触面にフィンが形成さ
れ、該フィンを前記遮光性樹脂に埋込ませてなることを
特徴とするものである。Further, in the above-mentioned structure, a fin is formed on the light-shielding resin contact surface of the light-shielding resin contact portion, and the fin is embedded in the light-shielding resin.
【００１０】[0010]
【作用】上記の構成によれば、電力半導体装置におい
て、ヒートシンク用リードフレームは、電力制御用半導
体素子搭載用リードフレーム接触部及び遮光性樹脂接触
部からなり、それぞれ各部は電力制御用半導体素子搭載
用リードフレーム及び高熱伝導性の遮光性樹脂と接触さ
せてなる構成なので、発熱体となる電力制御用半導体素
子の熱は効率良く前記ヒートシンク用リードフレームを
介して前記遮光性樹脂へ伝達され、続いて該遮光性樹脂
より放熱されるので、放熱量が大きくなり電力半導体装
置としての熱抵抗を低減できる。According to the above structure, in the power semiconductor device, the lead frame for the heat sink is composed of the lead frame contact portion for mounting the power control semiconductor element and the light-shielding resin contact portion, and each portion is mounted for the power control semiconductor element. Since it is configured to be in contact with the power-use lead frame and the light-shielding resin having high thermal conductivity, the heat of the power control semiconductor element, which is a heating element, is efficiently transmitted to the light-shielding resin through the heat-sink lead frame. Since the heat is radiated from the light-shielding resin, the amount of heat radiated is large and the thermal resistance of the power semiconductor device can be reduced.
【００１１】さらに、前記遮光性樹脂接触部における遮
光性樹脂接触面にフィンが形成され、該フィンを前記遮
光性樹脂に埋込ませることにより、前記遮光性樹脂接触
部及び遮光性樹脂間の熱伝達をさらに向上できる。Further, a fin is formed on the light-shielding resin contact surface of the light-shielding resin contact portion, and the fin is embedded in the light-shielding resin, so that the heat between the light-shielding resin contact portion and the light-shielding resin is increased. Communication can be further improved.
【００１２】[0012]
【実施例】図１は本発明の一実施例を示す図であり、同
図（ａ）は正面断面図であり、同図（ｂ）は上面側から
の透視図であり、同図（ｃ）は右側面断面図である。1 is a diagram showing an embodiment of the present invention, FIG. 1 (a) is a front sectional view, FIG. 1 (b) is a perspective view from the upper side, and FIG. ) Is a right side sectional view.
【００１３】図１の如く、本発明の電力半導体装置は、
一次側リードフレーム２１及び二次側リードフレーム２
２とを含む。前記一次側リードフレーム２１は、電気信
号を光信号に変換する発光ダイオード等の発光素子２３
が搭載された発光素子搭載用リードフレーム２４と、ヒ
ートシンク用リードフレーム２５とを有する。また、前
記二次側リードフレーム２２は、前記発光素子２３から
の光信号を受光して電気信号に変換するフォトトライア
ック等の受光素子２６が搭載された受光素子搭載用リー
ドフレーム２７と、前記受光素子２６と接続されたトラ
イアック素子，サイリスタ等の電力制御用半導体素子２
８が搭載された電力制御用半導体素子搭載用リードフレ
ーム２９とを有する。前記電力制御用半導体素子２８
は、前記電力制御用半導体素子搭載用リードフレーム２
９における前記受光素子２４側寄り部分に載置されてい
る。また、上記素子２３，２６，２８は所望のフレーム
−素子間がワイヤーにて接続されている。As shown in FIG. 1, the power semiconductor device of the present invention is
Primary side lead frame 21 and secondary side lead frame 2
Including 2 and. The primary side lead frame 21 is a light emitting element 23 such as a light emitting diode that converts an electric signal into an optical signal.
The light emitting element mounting lead frame 24 and the heat sink lead frame 25 are mounted. Further, the secondary side lead frame 22 has a light receiving element mounting lead frame 27 on which a light receiving element 26 such as a phototriac for receiving an optical signal from the light emitting element 23 and converting the optical signal into an electric signal is mounted; Power control semiconductor element 2 such as triac element or thyristor connected to element 26
And a lead frame 29 for mounting a semiconductor element for power control on which 8 is mounted. The power control semiconductor element 28
Is the lead frame 2 for mounting the semiconductor element for power control.
It is mounted on a portion of the light emitting element 9 closer to the light receiving element 24. The elements 23, 26, and 28 are connected by wires between desired frames and elements.
【００１４】前記ヒートシンク用リードフレーム２５
は、長手方向中央部に切り込みが形成されており、該切
り込み部を境として電力制御用半導体素子搭載用リード
フレーム接触部３０と遮光性樹脂接触部３１とから構成
されている。The lead frame 25 for the heat sink
Has a notch formed in the central portion in the longitudinal direction, and is composed of a power control semiconductor element mounting lead frame contact portion 30 and a light shielding resin contact portion 31 with the notch as a boundary.
【００１５】前記一次側リードフレーム１１と二次側リ
ードフレーム１２とは、前記発光素子２３と受光素子２
６とが光学的に結合するよう互いに相対向する位置に配
置されるが、前記ヒートシンク用リードフレーム２５に
おける電力制御用半導体素子搭載用リードフレーム接触
部３０については、前記電力制御用半導体素子搭載用リ
ードフレーム２９と接するよう前記遮光性樹脂接触部３
１とは逆に下方に折り曲げられ、前記電力制御用半導体
素子搭載用リードフレーム接触部３０のほぼ全域がポッ
ト溶接等の溶接にて前記電力制御用半導体素子搭載用リ
ードフレーム２９と接続される。The primary side lead frame 11 and the secondary side lead frame 12 are composed of the light emitting element 23 and the light receiving element 2.
6 are arranged at positions opposite to each other so as to be optically coupled with each other. Regarding the power control semiconductor element mounting lead frame contact portion 30 in the heat sink lead frame 25, the power control semiconductor element mounting The light-shielding resin contact portion 3 so as to come into contact with the lead frame 29.
1 is bent downward, and substantially the entire area of the power control semiconductor element mounting lead frame contact portion 30 is connected to the power control semiconductor element mounting lead frame 29 by welding such as pot welding.
【００１６】前記一次側リードフレーム１１及び二次側
リードフレーム１２の一部を除く部分は、前記発光素子
２３及び受光素子２６間の入・出力を絶縁するとともに
光路を形成するため透光性樹脂３２にて封止されるが、
図１（ｃ）の如く、前記ヒートシンク用リードフレーム
２５における遮光性樹脂接触部３１の遮光性樹脂接触面
のみは前記透光性樹脂３２から露出するよう封止され
る。さらに、前記透光性樹脂封止部３２の外周及び遮光
性樹脂接触部３１における遮光性樹脂接触面は、外乱光
の遮断及び内部光の伝達率の向上並びに放熱部となる高
熱伝導性の遮光性樹脂３３により封止されている。これ
により、前記遮光性樹脂接触部３１と遮光性樹脂３３と
は接触する構成となる。ここで、前記電力制御用半導体
素子搭載用リードフレーム２９を直接遮光性樹脂３３に
接触しないのは、製造工程において、透光性樹脂３２に
より封止した後のバリ取り工程でストレスが素子２６に
直接加わらないようにした為である。尚、発光素子搭載
用リードフレーム２４及び受光素子搭載用リードフレー
ム２７についても上記と同様である。A portion of the primary side lead frame 11 and the secondary side lead frame 12 except a part thereof insulates the input / output between the light emitting element 23 and the light receiving element 26 and forms an optical path, and is a translucent resin. Sealed at 32,
As shown in FIG. 1C, only the light-shielding resin contact surface of the light-shielding resin contact portion 31 in the heat sink lead frame 25 is sealed so as to be exposed from the light-transmitting resin 32. Further, the outer periphery of the light-transmitting resin sealing portion 32 and the light-shielding resin contact surface of the light-shielding resin contact portion 31 shield high-conductivity light by blocking external light and improving the transmissivity of internal light. It is sealed with a conductive resin 33. As a result, the light blocking resin contact portion 31 and the light blocking resin 33 come into contact with each other. The reason why the power control semiconductor element mounting lead frame 29 is not in direct contact with the light shielding resin 33 is that stress is applied to the element 26 in the deburring step after sealing with the translucent resin 32 in the manufacturing process. This is because I didn't join them directly. The same applies to the light emitting element mounting lead frame 24 and the light receiving element mounting lead frame 27.
【００１７】上記透光性樹脂３２及び遮光性樹脂３３
は、例えば共にエポキシ樹脂からなり、前記遮光性樹脂
３３はエポキシ樹脂内にシリカを多く含ませることによ
り高熱伝導性とすることができる。The light-transmitting resin 32 and the light-shielding resin 33 described above.
Are both made of epoxy resin, for example, and the light-shielding resin 33 can have high thermal conductivity by containing a large amount of silica in the epoxy resin.
【００１８】このように、上記構造の電力半導体装置
は、ヒートシンク用リードフレーム２５が電力制御用半
導体素子搭載用リードフレーム接触部３０及び遮光性樹
脂接触部３１からなり、それぞれ各部３０，３１は電力
制御用半導体素子搭載用リードフレーム２９及び高熱伝
導性の遮光性樹脂３３に接触させてなる構成なので、電
力制御用半導体素子２８で発生した熱は、電力制御用半
導体素子搭載用リードフレーム２９、電力制御用半導体
素子搭載用リードフレーム接触部３０、遮光性樹脂接触
部３１、遮光性樹脂３３の順に順次に熱伝達され、前記
遮光性樹脂３３より放熱される。ここで、前記電力制御
用電力半導体素子２８及び遮光性樹脂３３間の熱伝達経
路は、熱の伝導性の高いリードフレーム例えば、Ｃｕ等
であるため、熱を効率よく伝達される。従って前記遮光
性樹脂３３からの放熱量を向上でき、電力半導体装置と
しての熱抵抗を低減できる。これにより、外形を変える
ことなく電流容量をアップすることが可能となる。As described above, in the power semiconductor device having the above structure, the heat sink lead frame 25 is composed of the power control semiconductor element mounting lead frame contact portion 30 and the light-shielding resin contact portion 31, and each of the portions 30, 31 is powered. Since the configuration is such that the control semiconductor element mounting lead frame 29 and the high thermal conductive light shielding resin 33 are in contact with each other, the heat generated in the power control semiconductor element 28 is generated by the power control semiconductor element mounting lead frame 29, Heat is transferred to the control semiconductor element mounting lead frame contact portion 30, the light-shielding resin contact portion 31, and the light-shielding resin 33 in this order, and is radiated from the light-shielding resin 33. Here, the heat transfer path between the power control power semiconductor element 28 and the light-shielding resin 33 is a lead frame having high heat conductivity, such as Cu, so that heat is transferred efficiently. Therefore, the amount of heat radiation from the light-shielding resin 33 can be improved, and the thermal resistance of the power semiconductor device can be reduced. This makes it possible to increase the current capacity without changing the outer shape.
【００１９】図２は他の実施例を示す図であり、同図
（ａ）は正面断面図であり、同図（ｂ）は上面側からの
透視図であり、同図（ｃ）は右側面断面図である。FIG. 2 is a view showing another embodiment, FIG. 2 (a) is a front sectional view, FIG. 2 (b) is a perspective view from the upper side, and FIG. 2 (c) is the right side. FIG.
【００２０】本実施例について、図１に示す実施例と相
違する点のみ説明する。図２の如く、本実施例の電力半
導体装置は、ヒートシンク用リードフレーム２５におけ
る遮光性樹脂接触部３１に、曲げ加工によりフィン３
４，３４を形成し、該フィン３４を遮光性樹脂３３に埋
込ませてなるものである。Only the points of this embodiment different from the embodiment shown in FIG. 1 will be described. As shown in FIG. 2, in the power semiconductor device of this embodiment, the fin 3 is formed on the light-shielding resin contact portion 31 of the heat sink lead frame 25 by bending.
4, 34 are formed, and the fins 34 are embedded in the light-shielding resin 33.
【００２１】前記フィン３４は、例えば、前記遮光性樹
脂接触部３１に略Ｌ字状の切り目を設け、該切り目の内
側部分を遮光性樹脂側へ起こすことにより形成される。The fin 34 is formed, for example, by providing a substantially L-shaped cut in the light-shielding resin contact portion 31 and raising the inner portion of the cut to the light-shielding resin side.
【００２２】このように、遮光性樹脂接触部３１にフィ
ン３４を形成し、該フィン３４を遮光性樹脂３３に埋込
ませることにより、前記遮光性樹脂接触部３１と遮光性
樹脂３３との接触面積が広くなり、遮光性樹脂接触部３
１及び遮光性樹脂３３間の熱伝達をさらに向上できる。By thus forming the fins 34 on the light-shielding resin contact portion 31 and embedding the fins 34 in the light-shielding resin 33, the light-shielding resin contact portion 31 and the light-shielding resin 33 are brought into contact with each other. The area is increased, and the light-shielding resin contact portion 3
The heat transfer between 1 and the light-shielding resin 33 can be further improved.
【００２３】図３は更に他の実施例を示す図であり、同
図（ａ）は正面図であり、同図（ｂ）は上面側からの透
視図であり、同図（ｃ）は右側面断面図である。3A and 3B are views showing still another embodiment. FIG. 3A is a front view, FIG. 3B is a perspective view from the upper side, and FIG. 3C is a right side. FIG.
【００２４】本実施例について、図１に示す実施例と相
違する点のみ説明する。図３の如く、本実施例の電力半
導体装置は、ヒートシンク用リードフレーム２５におけ
る遮光性樹脂接触部３１の遮光性樹脂接触面にフィン３
４を有する金属板３５を搭載し、前記フィン３４を遮光
性樹脂３３に埋込ませてなるものである。Only the points of this embodiment different from the embodiment shown in FIG. 1 will be described. As shown in FIG. 3, in the power semiconductor device of the present embodiment, the fin 3 is provided on the light-shielding resin contact surface of the light-shielding resin contact portion 31 of the heat sink lead frame 25.
The metal plate 35 having the number 4 is mounted, and the fins 34 are embedded in the light shielding resin 33.
【００２５】前記金属板３５は、例えば、前記フィン３
４と嵌合する凹部を有する所望の金型内にＣｕを注入し
て形成され、前記遮光性樹脂接触面にポット溶接等によ
り搭載されてなる。The metal plate 35 is, for example, the fin 3
It is formed by injecting Cu into a desired mold having a recess fitting with 4, and is mounted on the light-shielding resin contact surface by pot welding or the like.
【００２６】このように、本実施例においても、図２に
示す実施例と同様、遮光性樹脂接触部３１と遮光性樹脂
３３との接触面積が広くなるので図２に示す実施例と同
様の効果を得ることができる。As described above, also in this embodiment, as in the embodiment shown in FIG. 2, the contact area between the light-shielding resin contact portion 31 and the light-shielding resin 33 is wide, so that it is the same as the embodiment shown in FIG. The effect can be obtained.
【００２７】[0027]
【発明の効果】以上のように、本発明の電力半導体装置
によれば、ヒートシンク用リードフレームは、電力制御
用半導体素子搭載用リードフレーム接触部及び遮光性樹
脂接触部からなり、それぞれ各部は電力制御用半導体素
子搭載用リードフレーム及び高熱伝導性の遮光性樹脂と
接触させてなる構成なので、電力半導体素子で発生する
熱は前記ヒートシンク用リードフレームを介して遮光性
樹脂へ伝達し、放熱されることから、前記遮光性樹脂か
らの放熱量が向上され、電力半導体素子としての熱抵抗
が低減される。As described above, according to the power semiconductor device of the present invention, the heat sink lead frame is composed of the power control semiconductor element mounting lead frame contact portion and the light-shielding resin contact portion, and each portion has power consumption. Since it is configured to be in contact with the control semiconductor element mounting lead frame and the high heat conductive light shielding resin, the heat generated in the power semiconductor element is transferred to the light shielding resin via the heat sink lead frame and is radiated. Therefore, the amount of heat released from the light-shielding resin is improved, and the thermal resistance of the power semiconductor element is reduced.
【００２８】さらに、前記遮光性樹脂接触部における遮
光性樹脂接触面にフィンを形成し、該フィンを遮光性樹
脂に埋込ませることにより、前記遮光性樹脂接触部及び
遮光性樹脂間の熱伝達がさらに向上される。Further, by forming a fin on the light-shielding resin contact surface of the light-shielding resin contact portion and embedding the fin in the light-shielding resin, heat transfer between the light-shielding resin contact portion and the light-shielding resin is conducted. Is further improved.
【図１】本発明の一実施例を示す図であり、図（ａ）は
正面断面図であり、図（ｂ）は上面側からの透視図であ
り、図（ｃ）は右側面断面図である。FIG. 1 is a view showing an embodiment of the present invention, FIG. 1 (a) is a front sectional view, FIG. 1 (b) is a perspective view from the top side, and FIG. 1 (c) is a right side sectional view. Is.
【図２】本発明の他の実施例を示す図であり、図（ａ）
は正面断面図であり、図（ｂ）は上面側からの透視図で
あり、図（ｃ）は右側面断面図である。FIG. 2 is a diagram showing another embodiment of the present invention, FIG.
Is a front sectional view, FIG. 6B is a perspective view from the upper surface side, and FIG. 6C is a right side sectional view.
【図３】本発明の更に他の実施例を示す図であり、図
（ａ）は正面断面図であり、図（ｂ）は上面側からの透
視図であり、図（ｃ）は右側面断面図である。3A and 3B are views showing still another embodiment of the present invention, FIG. 3A is a front sectional view, FIG. 3B is a perspective view from the upper surface side, and FIG. 3C is a right side surface. FIG.
【図４】従来例を示す図であり、図（ａ）は正面断面図
であり、図（ｂ）は上面側からの透視図であり、図
（ｃ）は右側面断面図である。4A and 4B are views showing a conventional example, FIG. 4A is a front sectional view, FIG. 4B is a perspective view from the upper surface side, and FIG. 4C is a right side sectional view.
２１ 一次側リードフレーム ２２ 二次側リードフレーム ２５ ヒートシンク用リードフレーム ２９ 電力制御用半導体素子搭載用リードフレーム ３０ 電力制御用半導体素子搭載用リードフレーム接触
部 ３１ 遮光性樹脂接触部 ３２ 透光性樹脂 ３３ 遮光性樹脂 ３４ フィン21 primary side lead frame 22 secondary side lead frame 25 heat sink lead frame 29 power control semiconductor element mounting lead frame 30 power control semiconductor element mounting lead frame contact portion 31 light-shielding resin contact portion 32 translucent resin 33 Light-shielding resin 34 fins
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/48 Ｇ 23/50 Ｆ 9272−4Ｍ Ｗ 9272−4Ｍ 25/07 25/18 27/14 29/74 Ｅ Ｋ Ｌ 7210−4Ｍ Ｈ０１Ｌ 27/14 Ｚ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location H01L 23/48 G 23/50 F 9272-4M W 9272-4M 25/07 25/18 27/14 29/74 EK L 7210-4M H01L 27/14 Z
Claims (2)
一次側リードフレームと、二次側リードフレームとが透
光性樹脂にて封止され、該透光性樹脂部の外周が高熱伝
導性の遮光性樹脂にて封止されてなる電力半導体装置に
おいて、前記ヒートシンク用リードフレームは、電力制
御用半導体素子搭載用リードフレーム接触部及び遮光性
樹脂接触部からなり、それぞれ各部は電力制御用半導体
素子搭載用リードフレーム及び遮光性樹脂と接触させて
なることを特徴とする電力半導体装置。1. A primary side lead frame having a heat sink lead frame and a secondary side lead frame are sealed with a translucent resin, and the outer periphery of the translucent resin portion is a high heat conductive light shielding resin. In the power semiconductor device sealed with, the heat sink lead frame includes a power control semiconductor element mounting lead frame contact portion and a light-shielding resin contact portion, and each portion is a power control semiconductor element mounting lead. A power semiconductor device characterized by being brought into contact with a frame and a light-shielding resin.
脂接触面にフィンが形成され、該フィンを前記遮光性樹
脂に埋込ませてなることを特徴とする請求項１記載の電
力半導体装置。2. The power semiconductor device according to claim 1, wherein a fin is formed on a light-shielding resin contact surface of the light-shielding resin contact portion, and the fin is embedded in the light-shielding resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7559893A JP2851985B2 (en) | 1993-04-01 | 1993-04-01 | Power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7559893A JP2851985B2 (en) | 1993-04-01 | 1993-04-01 | Power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06291362A true JPH06291362A (en) | 1994-10-18 |
| JP2851985B2 JP2851985B2 (en) | 1999-01-27 |
Family
ID=13580807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7559893A Expired - Fee Related JP2851985B2 (en) | 1993-04-01 | 1993-04-01 | Power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2851985B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156253A (en) * | 1999-10-01 | 2001-06-08 | Fairchild Korea Semiconductor Ltd | Semiconductor power module and its manufacturing method |
| US7019394B2 (en) | 2003-09-30 | 2006-03-28 | Intel Corporation | Circuit package and method of plating the same |
| JP2007095932A (en) * | 2005-09-28 | 2007-04-12 | Sharp Corp | Semiconductor device, its manufacturing method, and electronic apparatus |
-
1993
- 1993-04-01 JP JP7559893A patent/JP2851985B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156253A (en) * | 1999-10-01 | 2001-06-08 | Fairchild Korea Semiconductor Ltd | Semiconductor power module and its manufacturing method |
| US7449774B1 (en) | 1999-10-01 | 2008-11-11 | Fairchild Korea Semiconductor Ltd. | Semiconductor power module having an electrically insulating heat sink and method of manufacturing the same |
| US7501700B2 (en) | 1999-10-01 | 2009-03-10 | Fairchild Korea Semiconductor Ltd. | Semiconductor power module having an electrically insulating heat sink and method of manufacturing the same |
| US7019394B2 (en) | 2003-09-30 | 2006-03-28 | Intel Corporation | Circuit package and method of plating the same |
| US7405155B2 (en) | 2003-09-30 | 2008-07-29 | Intel Corporation | Circuit package and method of plating the same |
| JP2007095932A (en) * | 2005-09-28 | 2007-04-12 | Sharp Corp | Semiconductor device, its manufacturing method, and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2851985B2 (en) | 1999-01-27 |
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| LAPS | Cancellation because of no payment of annual fees |