JPS587870A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS587870A
JPS587870A JP56105934A JP10593481A JPS587870A JP S587870 A JPS587870 A JP S587870A JP 56105934 A JP56105934 A JP 56105934A JP 10593481 A JP10593481 A JP 10593481A JP S587870 A JPS587870 A JP S587870A
Authority
JP
Japan
Prior art keywords
high resistance
contact
region
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56105934A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237112B2 (enrdf_load_stackoverflow
Inventor
Masaru Katagiri
優 片桐
Tetsuo Akisawa
秋沢　徹郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56105934A priority Critical patent/JPS587870A/ja
Publication of JPS587870A publication Critical patent/JPS587870A/ja
Publication of JPH0237112B2 publication Critical patent/JPH0237112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56105934A 1981-07-07 1981-07-07 半導体集積回路装置 Granted JPS587870A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56105934A JPS587870A (ja) 1981-07-07 1981-07-07 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105934A JPS587870A (ja) 1981-07-07 1981-07-07 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS587870A true JPS587870A (ja) 1983-01-17
JPH0237112B2 JPH0237112B2 (enrdf_load_stackoverflow) 1990-08-22

Family

ID=14420673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105934A Granted JPS587870A (ja) 1981-07-07 1981-07-07 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS587870A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04100106U (enrdf_load_stackoverflow) * 1991-02-12 1992-08-28
EP0562352A3 (enrdf_load_stackoverflow) * 1992-03-26 1994-01-05 Texas Instruments Inc

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03127695U (enrdf_load_stackoverflow) * 1990-04-03 1991-12-24

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04100106U (enrdf_load_stackoverflow) * 1991-02-12 1992-08-28
EP0562352A3 (enrdf_load_stackoverflow) * 1992-03-26 1994-01-05 Texas Instruments Inc
US5350932A (en) * 1992-03-26 1994-09-27 Texas Instruments Incorporated High voltage structures with oxide isolated source and resurf drift region in bulk silicon
KR100301917B1 (ko) * 1992-03-26 2001-10-22 윌리엄 비. 켐플러 고전압전력트랜지스터

Also Published As

Publication number Publication date
JPH0237112B2 (enrdf_load_stackoverflow) 1990-08-22

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