JPS5875860A - 冷媒封入型半導体装置 - Google Patents

冷媒封入型半導体装置

Info

Publication number
JPS5875860A
JPS5875860A JP56173959A JP17395981A JPS5875860A JP S5875860 A JPS5875860 A JP S5875860A JP 56173959 A JP56173959 A JP 56173959A JP 17395981 A JP17395981 A JP 17395981A JP S5875860 A JPS5875860 A JP S5875860A
Authority
JP
Japan
Prior art keywords
chip
liquid
semiconductor device
semiconductor
cooled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56173959A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6219074B2 (enExample
Inventor
Kishio Yokouchi
貴志男 横内
Koichi Niwa
丹羽　紘一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56173959A priority Critical patent/JPS5875860A/ja
Publication of JPS5875860A publication Critical patent/JPS5875860A/ja
Publication of JPS6219074B2 publication Critical patent/JPS6219074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP56173959A 1981-10-30 1981-10-30 冷媒封入型半導体装置 Granted JPS5875860A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56173959A JPS5875860A (ja) 1981-10-30 1981-10-30 冷媒封入型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56173959A JPS5875860A (ja) 1981-10-30 1981-10-30 冷媒封入型半導体装置

Publications (2)

Publication Number Publication Date
JPS5875860A true JPS5875860A (ja) 1983-05-07
JPS6219074B2 JPS6219074B2 (enExample) 1987-04-25

Family

ID=15970215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56173959A Granted JPS5875860A (ja) 1981-10-30 1981-10-30 冷媒封入型半導体装置

Country Status (1)

Country Link
JP (1) JPS5875860A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114445A (ja) * 1981-12-28 1983-07-07 Fujitsu Ltd 液冷モジユ−ル
JPS60254757A (ja) * 1984-05-31 1985-12-16 Toshiba Corp 高密度実装回路部品
JPS60254641A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 液体封入型パツケ−ジ
JP2004297069A (ja) * 2003-03-27 2004-10-21 Stmicroelectronics Inc 露出されている集積回路ダイ表面の直接的対流冷却用のシステム及び方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147576A (ja) * 1974-10-23 1976-04-23 Hitachi Ltd Kannaikyuchakushikikatsuseitankyuchakusochi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147576A (ja) * 1974-10-23 1976-04-23 Hitachi Ltd Kannaikyuchakushikikatsuseitankyuchakusochi

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114445A (ja) * 1981-12-28 1983-07-07 Fujitsu Ltd 液冷モジユ−ル
JPS60254757A (ja) * 1984-05-31 1985-12-16 Toshiba Corp 高密度実装回路部品
JPS60254641A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 液体封入型パツケ−ジ
JP2004297069A (ja) * 2003-03-27 2004-10-21 Stmicroelectronics Inc 露出されている集積回路ダイ表面の直接的対流冷却用のシステム及び方法

Also Published As

Publication number Publication date
JPS6219074B2 (enExample) 1987-04-25

Similar Documents

Publication Publication Date Title
US5095404A (en) Arrangement for mounting and cooling high density tab IC chips
US7078803B2 (en) Integrated circuit heat dissipation system
JPS5936827B2 (ja) 集積回路素子の冷却装置
US7842553B2 (en) Cooling micro-channels
US7411790B2 (en) Heat sink with built-in heat pipes for semiconductor packages
US7049695B1 (en) Method and device for heat dissipation in semiconductor modules
US20200258807A1 (en) Heat Sink Design For Flip Chip Ball Grid Array
JPS5875860A (ja) 冷媒封入型半導体装置
JPH02307251A (ja) 樹脂封止型半導体装置
TWI416675B (zh) 具有增加熱傳導之積體電路
US20020024132A1 (en) Semiconductor device with internal heat dissipation
JP3193142B2 (ja) 基 板
JPH0342512B2 (enExample)
JPS6142864B2 (enExample)
US20060252179A1 (en) Integrated circuit packaging structure and method of making the same
JPS6144450Y2 (enExample)
JPS61174749A (ja) 高密度集積回路
JPS6016452A (ja) 半導体集積回路
JPH0521665A (ja) ヒートシンク付半導体パツケージ
JP2765242B2 (ja) 集積回路装置
JPS63289847A (ja) Ｌｓｉパッケ−ジの放熱構造
JPH043505Y2 (enExample)
CN113363224A (zh) 一种具有增强散热设计的to封装结构
US20030151132A1 (en) Microelectronic die providing improved heat dissipation, and method of packaging same
JPS612350A (ja) 半導体集積回路装置