US20060252179A1 - Integrated circuit packaging structure and method of making the same - Google Patents

Integrated circuit packaging structure and method of making the same Download PDF

Info

Publication number
US20060252179A1
US20060252179A1 US11417047 US41704706A US2006252179A1 US 20060252179 A1 US20060252179 A1 US 20060252179A1 US 11417047 US11417047 US 11417047 US 41704706 A US41704706 A US 41704706A US 2006252179 A1 US2006252179 A1 US 2006252179A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
heat
surface
dissipating
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11417047
Inventor
Jen-Shyan Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NeoBulb Technologies Inc
Original Assignee
NeoBulb Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427Cooling by change of state, e.g. use of heat pipes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

The invention provides an integrated circuit packaging and method of making the same. The integrated circuit packaging includes a substrate, a semiconductor die, a heat-dissipating module, and a protection layer. The substrate has an inner circuit formed on a first surface, and an outer circuit formed on a second surface and electrically connected to the inner circuit. The semiconductor die is mounted on the first surface of the substrate such that the plurality of bond pads contact the inner circuit. The heat-dissipating module includes a heat-conducting device, and the heat-conducting device, via a flat end surface thereof, contacts and bonds with a back surface of the semiconductor die. The protection layer contacts a portion of the first surface of the substrate and a portion of the heat-conducting device, such that the semiconductor die is encapsulated therebetween.

Description

    BACKGROUND OF THE INVENTION
  • [0001]
    1. Field of the Invention
  • [0002]
    The present invention relates to an integrated circuit (IC) packaging structure and a method of making the same, and more particularly, the IC packaging structure according to the invention includes a heat-dissipating module.
  • [0003]
    2. Description of the Prior Art
  • [0004]
    Heat dissipating has always been a prerequisite consideration for the design of electronic systems to decrease the chances of a breakdown or destruction on an electric device caused by overheating, so as to improve the reliability of the whole system.
  • [0005]
    For current ICs, especially for CPU in computers, the technique for heat dissipation usually involves using a metal with high thermal conductivity as the basic heat-dissipating material and combining heat-dissipating fins and a powerful fan to fit the request of heat dissipating for the current ICs.
  • [0006]
    In the current heat-dissipating techniques, most of the heat-dissipating modules are configured on the casings of the packaged IC. Referring to FIG. 1A and FIG. 1B, FIG. 1A and FIG. 1B illustrate samples of current IC packaging structure configured with a heat-dissipating device. As shown in FIG. 1A and FIG. 1B, the heat produced by a chip 10 of an IC packaging structure 1 is conducted through a conducting layer 14 to a heat-dissipating module 2. Because the heat produced by the chip is dissipated by means of conducting through multilayer materials, not by means of directly contacting the heat dissipating module, the heat can not be quickly dissipated, and the problem of heat concentration caused by hot spots cannot be efficiently solved. Therefore, the heat-dissipating efficiency of a chip cannot be precisely controlled, and the performance of the IC is lowered due to overheating.
  • [0007]
    As the concept of mobile information arises, thin and small mobile products with high calculating performance are the mainstream. The technique for heat dissipating faces the challenge of products boasting characters of miniature, integration, high heat-dissipating capability, and high energy density. The current technique for heat dissipation is gradually failing to fulfill the demands of heat dissipation in new products. Especially for partial heat concentration of a chip, called hot spot issue, there is a need for new heat-dissipating techniques to solve these problems.
  • [0008]
    Accordingly, the invention provides an IC packaging structure therein integrated with a heat-dissipating module, which reduces the thermal resistance of the chip at the packaging stage to dissipate heat and effectively lower the temperature of the chip during operation. According to the invention, the IC packing structure can overcome the heat-dissipating problem and quickly conduct the heat produced by the chip to solve the hot spot issue.
  • SUMMARY OF THE INVENTION
  • [0009]
    The present invention provides an IC packing structure and a method of making the same to achieve the above goal and solve the discussed issue.
  • [0010]
    According to a first preferred embodiment of the invention, the IC packing structure includes a substrate, a semiconductor die, a heat-dissipating module, and a protection layer. The substrate has a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface. The outer circuit is electrically connected to the inner circuit. The semiconductor die has an active surface, a plurality of bond pads formed on the active surface, and a back surface opposite to the active surface. The semiconductor die is mounted on the first surface of the substrate, such that the plurality of bond pads contact the inner circuit. The heat-dissipating module includes a heat-conducting device which has a flat end surface. The heat-conducting device, via the flat end surface thereof, contacts and bonds with the back surface of the semiconductor die. The protection layer contacts a portion of the first surface of the substrate and a portion of the heat-conducting device, such that the semiconductor die is encapsulated therebetween.
  • [0011]
    According to the first preferred embodiment of the invention, the method of making the IC packing structure is to prepare a substrate, a semiconductor, and a heat-dissipating module. The substrate has a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface. The outer circuit is electrically connected to the inner circuit. The semiconductor die has an active surface, a plurality of bond pads formed on the active surface, and a back surface opposite to the active surface. The heat-dissipating module includes a heat-conducting device which has a flat end surface at a distal end thereof.
  • [0012]
    The method is, first, to mount the semiconductor die on the first surface of the substrate, such that the plurality of bond pads contact the inner circuit. In the method, a protection layer is also formed to contact a portion of the substrate. The protection layer has an opening adapted to accommodate the flat end surface of the heat-conducting device. Furthermore, the distal end of the heat-conducting device is disposed into the opening of the protection layer, so the flat end surface of the heat-conducting device contacts and bonds with the back surface of the semiconductor die to complete the IC packing structure.
  • [0013]
    According to a second preferred embodiment of the invention, an IC packing structure includes a substrate, a protection layer, a semiconductor die, and a heat-dissipating module. The substrate has a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface. The outer circuit is electrically connected to the inner circuit. The protection layer is formed on the first surface of the substrate. The protection layer has an opening where the inner circuit is disposed. The semiconductor die has an active surface, a plurality of bond pads formed on the active surface, and a back surface opposite to the active surface. The semiconductor die is mounted in the opening of the protection layer such that the plurality of bond pads contact the inner circuit, and a gap exist between the semiconductor die and the protection layer. The heat-dissipating module includes a heat-conducting device which has a flat end surface at a distal end thereof. The heat-conducting device, via the distal end of the heat-conducting device, is inserted into the opening of the protection layer, and the flat end surface thereof contacts and bonds with the back surface of the semiconductor die.
  • [0014]
    According to the second preferred embodiment of the invention, the method of making the IC packing structure is to prepare a substrate and a semiconductor. The substrate has a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface. The outer circuit is electrically connected to the inner circuit. The semiconductor has an active surface, a plurality of bond pads formed on the active surface, and a back surface opposite to the active surface.
  • [0015]
    The method is, first, to form a protection layer. The protection layer contacts a portion of the first surface of the substrate, which has an opening where the inner circuit is disposed. Then, the semiconductor die is mounted in the opening of the protection layer such that the plurality of bond pads contact the inner circuit, and a gap exists between the semiconductor die and the protection layer. The distal end of the heat-dissipating module is further disposed into the opening of the protection layer. The heat-dissipating module includes a heat-conducting device which has a flat end surface at a distal thereof. Finally, the flat end surface of the heat-conducting device contacts and bonds with the back surface of the semiconductor die to complete the IC packing structure.
  • [0016]
    Because the IC packing structure of the invention bonds the heat-dissipating module with the semiconductor die, the heat-conducting device directly conducts the heat produced by the semiconductor die to the surrounding air via the fins. This not only solves the hot spot issue, but also greatly improves the heat-dissipating efficiency. The IC packing structure further integrates other heat-dissipating techniques to achieve a better effect of heat dissipating. Therefore, comparing with the prior art, the IC packing structure of the invention is more suitable for the application of high power semiconductor devices.
  • [0017]
    The advantage and spirit of the invention may be understood by the following recitations together with the appended drawings.
  • BRIEF DESCRIPTION OF THE APPENDED DRAWINGS
  • [0018]
    FIG. 1A and FIG. 1B illustrate the IC packing structure of current integrated heat-dissipating devices.
  • [0019]
    FIG. 2 illustrates an outward view of the IC packing structure of the present invention.
  • [0020]
    FIG. 3 is a cross-sectional diagram along the A-A line in FIG. 2, illustrating the IC packing structure of the first embodiment of the present invention.
  • [0021]
    FIGS. 4A through 4D illustrate the process of the IC packing structure according to the first preferred embodiment of the present invention.
  • [0022]
    FIG. 5 is a cross-sectional diagram along the A-A line in FIG. 2, illustrating the IC packing structure of the second embodiment of the present invention.
  • [0023]
    FIGS. 6A through 6E illustrate the process of the IC packing structure according to the second preferred embodiment of the present invention.
  • [0024]
    FIG. 7 illustrates the heat dissipating mechanism of the heat-dissipating module.
  • DETAILED DESCRIPTION OF THE INVENTION
  • [0025]
    A scope of the present invention provides an IC packing structure.
  • [0026]
    Referring to FIG. 2, FIG. 2 illustrates an outward view of the IC packing structure of the invention. As shown in FIG. 2, the IC packing structure 1 includes a heat-dissipating module 12 and a casing 18.
  • [0027]
    Referring to FIG. 3, FIG. 3, a cross-sectional diagram along the A-A line in FIG. 2, illustrates a first preferred embodiment according to the IC packing structure of the invention. As shown in FIG. 3, according to the first preferred embodiment of the invention, the IC packing structure 1 further comprises a semiconductor die 10, a substrate 16, and a protection layer 14. In the first preferred embodiment, the semiconductor die can be a high power semiconductor device.
  • [0028]
    The substrate 16 has a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit 13 formed on the second surface. The outer circuit 13 is electrically connected to the inner circuit. The semiconductor 10 has an active surface, a plurality of bond pads 17 formed on the active surface, and a back surface opposite to the active surface. The semiconductor die 10 is mounted on the first surface of the substrate 16 by a flip-chip process, such that the plurality of bond pads 17 contact and are electrically connected to the inner circuit.
  • [0029]
    The heat-dissipating module 12 includes a heat-conducting device 122 and a plurality of heat-dissipating fins 124. The heat-conducting device 122 can be a heat pipe, a heat column, or a column made of a material with high thermal conductivity. The heat-conducting device 122 has a flat end, and the heat-dissipating fins 124 are disposed around its circumference to enhance heat dissipating. The heat-conducting device 122, via the flat end surface thereof, contacts and bonds with the back surface of the semiconductor die 10. The protection layer 14 contacts a portion of the first surface of the substrate 16 and a portion of the heat-conducting device 122, such that the semiconductor die 10 is encapsulated therebetween. The casing 18 is capable of enclosing the heat-dissipating module 12, the protection layer 14, and the substrate 16. In practical application, other heat-dissipating devices can be configured on the top surface of the casing, or a fan can be configured on a side of the IC packing structure 1.
  • [0030]
    According to the first preferred embodiment of the IC packing structure of the invention, the method of making the IC packing structure will be described in detail as follows. Referring to FIGS. 4A through 4D, FIGS. 4A through 4D illustrate the process of the IC packing structure according to the first preferred embodiment of the invention.
  • [0031]
    First, a substrate 16 and a semiconductor die 10 are prepared. The substrate 16 has a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit 13 formed on the second surface. The outer circuit 13 is electrically connected to the inner circuit. The semiconductor die 10 has an active surface, a plurality of bond pads 17 on the active surface, and a back surface opposite to the active surface. The heat-dissipating module 12 includes a heat-conducting device 122 which has a flat end surface at a distal thereof.
  • [0032]
    Referring to FIG. 4A, as shown in FIG. 4A, the semiconductor die 10 is mounted on the first surface of the substrate 16 by a flip-chip process, such that the plurality of bond pads 17 contact the inner circuit on the substrate 16. Then, as shown in FIG. 4B, a protection layer 14 is formed to cover a portion of the substrate 10. Moreover, the protection layer 14 has an opening 19 adapted to accommodate the flat end surface of the heat-conducting device 122. As shown in FIG. 4C, the distal end of the heat-conducting device 122 is disposed into the opening 19, and the flat end surface of the heat-conducting device 122 contacts and bonds with the back surface of the semiconductor die 10. The heat-dissipating module 12 further includes a plurality of heat-dissipating fins 124, which are disposed around the circumference of the heat-conducting device 122 to assist heat dissipating. Finally, as shown in FIG. 4D, a casing 18 encloses the heat-dissipating module 12, the protection layer 14, and the substrate 16 to complete the IC packing structure 1.
  • [0033]
    Referring to FIG. 5, FIG. 5, a cross-sectional diagram along the A-A line in FIG. 2, illustrates the IC packing structure according to a second preferred embodiment of the invention. As shown in FIG. 5, according to the second preferred embodiment of the invention, the IC packing structure 1 further includes a semiconductor die 10, a substrate 16, and a protection 14. In the second preferred embodiment, the semiconductor die can be a high power semiconductor device.
  • [0034]
    The substrate 16 has a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, an outer circuit 13 formed on the second surface. The outer circuit 13 is electrically connected to the inner circuit. The protection layer 14 is formed on the first surface of the substrate 16. The protection layer 14 has an opening of which the area is substantially equal to that of the end surface of the heat-dissipating module. The inner circuit is disposed and exposed in the opening. The semiconductor 10 has an active surface, a plurality of bond pads 17 formed on the active surface, and a back surface opposite to the active surface. The semiconductor die 10 is mounted in the opening of the protection layer 14 by a flip-chip process, such that the plurality of bond pads 17 contact the inner circuit on the first surface of the substrate 16. Since the area of the end surface of the heat-dissipating module 12 is larger than that of the back surface of the semiconductor die 10, a gap 11 exists between the semiconductor die 10 and the protection layer 14. Thermal adhesive is used to fill up the gap 11 between the semiconductor die 10 and the protection layer 14 to enhance heat dissipating. The heat-dissipating module 12 includes a heat-conducting device 122 and a plurality of heat-dissipating fins 124. The heat-conducting device 122 has a flat surface at a distal end thereof. The heat-conducting device 122, via the distal end thereof, is inserted into the opening of the protection layer 14, and the flat end surface thereof contacts and bonds with the back surface of the semiconductor die 10. The heat-dissipating fins 124 are disposed around the circumference of the heat-conducting device 122 to enhance heat dissipating. The casing 18 is capable of enclosing the heat-dissipating module 12, the protection layer 14, and the substrate 16.
  • [0035]
    According to the second preferred embodiment of the IC packing structure of the invention, the method of making the IC packing structure will be described in detail as follows. Referring to FIGS. 6A through 6E, FIGS. 6A through 6E illustrate the process of the IC packing structure according to the second preferred embodiment of the invention.
  • [0036]
    First, a substrate 16 and a semiconductor die 10 are prepared. The substrate 16 has a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit 13 formed on the second surface. The outer circuit 13 is electrically connected to the inner circuit. The semiconductor die 10 has an active surface, a plurality of bond pads 17 formed on the active surface, and a back surface opposite to the active surface.
  • [0037]
    Referring to FIG. 6A, as shown in FIG. 6A, the method is, first, to form a protection layer 14 on the substrate 16. The protection layer 14 substantially covers the first surface of the substrate 16 and has an opening 19, of which the area is substantially equal to that of the end surface of the heat-dissipating module 12. The inner circuit is disposed and exposed in the opening 19. As shown in FIG. 6B, the semiconductor die 10 is mounted into the opening 19 of the protection layer 14 by a flip-chip process, such that the plurality of bond pads 17 contact the inner circuit on the substrate 16. Since the area of the opening 19 is larger than that of the back surface of the semiconductor die 10, a gap 11 exists between the semiconductor die 10 and the protection layer 14. Referring to FIG. 6C, as shown in FIG. 6C, thermal adhesive is used to fill up the gap 11 to enhance heat dissipating. As shown in FIG. 6D, the heat-dissipating module 12, via the distal end thereof, is inserted into the opening of the protection layer 14. The heat-dissipating module 12 includes a heat-conducting device 122 and a plurality of heat-dissipating fins 124. The heat-conducting device 122 has a flat end surface at a distal thereof. The heat-dissipating fins 124 are disposed around the circumference of the heat-conducting device 122 to enhance heat dissipating. The heat-conducting device 122 contacts and bonds the flat end surface thereof with the back surface of the semiconductor die 10. Finally, as shown in FIG. 6E, a casing 18 encloses the heat-dissipating module 12, the protection layer 14, and the substrate 16 to complete the IC packing structure 1. The casing has a top surface for heat conducting, which can be configured with other heat-dissipating devices to enhance the heat-dissipating effect.
  • [0038]
    Referring to FIG. 7, FIG. 7 illustrates the heat dissipating mechanism of the heat-dissipating module. As shown in FIG. 7, the heat-dissipating module 12 includes the heat-conducting device 122 and a plurality of heat-dissipating fins 124. In practical application, the heat-conducting device 122 can be a heat column or a heat pipe made of copper. The heat-conducting device 122 includes a working fluid 126 and a capillary structure 128. The heat-dissipating fins 124 are disposed around the circumference of the heat-dissipating device 122 to enhance heat dissipating. When heat is produced by the semiconductor die 10, the working fluid 126 near the semiconductor die 10 in the heat-conducting device 122 vaporizes from liquid phase to vapor phase. The evaporated working fluid 126 transmits the heat to the other end of the heat-conducting device 122. The working fluid 126 will condense to liquid phase after the heat is dissipated through the heat-dissipating fins 124. The capillary structure 128 transmits the condensed working fluid 126 to the zone near the semiconductor die 10 in the heat-conducting device 122. The heat-conducting and heat-dissipating effect will be achieved by circulation, as shown in FIG. 7.
  • [0039]
    Because the IC packing structure of the invention bonds the heat-dissipating module with the semiconductor die, the heat-dissipating module directly dissipates the heat produced by the semiconductor die to the surrounding air via heat-dissipating fins and thermal adhesive, which greatly improves the heat-dissipating efficiency. The improvement of the heat-dissipating efficiency of semiconductor devices solves the issue of performance reduction of the semiconductor devices due to overheating. Therefore, comparing with the prior art, the IC packing structure of the invention is more suitable to the application of high power semiconductor devices.
  • [0040]
    With the example and explanations above, the features and spirits of the invention will be hopefully well described. Those skilled in the art will readily observe that numerous modifications and alterations of the device may be made while retaining the teaching of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

Claims (30)

  1. 1. An integrated circuit packaging structure, comprising:
    a substrate having a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface and electrically connected to the inner circuit;
    a semiconductor die having an active surface, a plurality of bond pads formed on the active surface, and a back surface opposite to the active surface, the semiconductor die being mounted on the first surface of the substrate such that the plurality of bond pads contact the inner circuit;
    a heat-dissipating module comprising a heat-conducting device having a flat end surface, the heat-conducting device via the flat end surface thereof contacting and bonding with the back surface of the semiconductor die; and
    a protection layer formed to contact a portion of the first surface of the substrate and a portion of the heat-conducting device, such that the semiconductor die is encapsulated therebetween.
  2. 2. The integrated circuit packaging structure of claim 1, further comprising a casing for enclosing the heat-dissipating module, the protection layer, and the substrate.
  3. 3. The integrated circuit packaging structure of claim 2, wherein the casing has an opening and a retainer formed on the inner wall of the opening for clamping with the substrate.
  4. 4. The integrated circuit packaging structure of claim 1, wherein the heat-dissipating module further comprises at least one heat-dissipating fin disposed around a circumference of the heat-conducting device.
  5. 5. The integrated circuit packaging structure of claim 1, wherein the heat-conducting device is a heat pipe, a heat column, or a column made of a material with high thermal conductivity.
  6. 6. The integrated circuit packaging structure of claim 1, wherein the semiconductor die is a high power IC device.
  7. 7. The integrated circuit packaging structure of claim 1, wherein the semiconductor die is mounted on the first surface of the substrate by a flip-chip process.
  8. 8. A method of making an integrated circuit packaging structure, said method comprising the steps of:
    preparing a substrate having a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface and electrically connected to the inner circuit;
    preparing a semiconductor die having an active surface and a plurality of bond pads formed on the active surface, and mounting the semiconductor die on the first surface of the substrate such that the plurality of bond pads contact the inner circuit, wherein the semiconductor die also has a back surface opposite to the active surface;
    preparing a heat-dissipating module comprising a heat-conducting device having a flat end surface at a distal end thereof;
    forming a protection layer to substantially cover a portion of the first surface of the substrate, the protection layer having an opening adapted to accommodate the flat end surface of the heat-conducting device; and
    disposing the distal end of the heat-conducting device into the opening of the protection layer, and contacting and bonding the flat end surface of the heat-conducting device with the back surface of the semiconductor die to complete the integrated circuit packaging.
  9. 9. The method of claim 8, further comprising the step of:
    by a casing, enclosing the heat-dissipating module, the protection layer, and the substrate.
  10. 10. The method of claim 8, wherein the casing has an opening and a retainer formed on the inner wall of the opening of the casing for clamping the substrate.
  11. 11. The method of claim 8, wherein the heat-dissipating module further comprises at least one heat-dissipating fin disposed around a circumference of the heat-conducting device.
  12. 12. The method of claim 8, wherein the heat-conducting device is a heat pipe, a heat column, or a column made of a material with high thermal conductivity.
  13. 13. The method of claim 8, wherein the semiconductor die is a high power IC device.
  14. 14. The method of claim 8, wherein the semiconductor die is mounted on the first surface of the substrate by a flip-chip process.
  15. 15. An integrated circuit packaging structure, comprising:
    a substrate having a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface and electrically connected to the inner circuit;
    a protection layer formed on the first surface of the substrate, the protection layer having an opening where the inner circuit is disposed;
    a semiconductor die having an active surface, a plurality of bond pads formed on the active surface, and a back surface opposite to the active surface, the semiconductor die being mounted in the opening of the protection layer such that the plurality of bond pads contact the inner circuit, and a gap exists between the semiconductor die and the protection layer; and
    a heat-dissipating module comprising a heat-conducting device having a flat end surface at a distal end thereof, the heat-conducting device via the distal end thereof inserting into the opening of the protection layer and via the flat end surface thereof contacting and bonding with the back surface of the semiconductor die.
  16. 16. The integrated circuit packaging structure of claim 15, wherein the gap between the semiconductor die and the protection layer is filled with a thermal adhesive.
  17. 17. The integrated circuit packaging structure of claim 15, further comprising a casing for enclosing the heat-dissipating module, the protection layer, and the substrate.
  18. 18. The integrated circuit packaging structure of claim 17, wherein the casing has an opening and a retainer formed on the inner wall of the opening of the casing for clamping the substrate.
  19. 19. The integrated circuit packaging structure of claim 15, wherein the heat-dissipating module further comprises at least one heat-dissipating fin disposed around a circumference of the heat-conducting device.
  20. 20. The integrated circuit packaging structure of claim 15, wherein the heat-conducting device is a heat pipe, a heat column, or a column made of a material with high thermal conductivity.
  21. 21. The integrated circuit packaging structure of claim 15, wherein the semiconductor die is a high power IC device.
  22. 22. The integrated circuit packaging structure of claim 1, wherein the semiconductor die is mounted on the first surface of the substrate by a flip-chip process.
  23. 23. A method of making an integrated circuit packaging structure, said method comprising the steps of:
    preparing a substrate having a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface and electrically connected to the inner circuit;
    forming a protection layer to contact the first surface of the substrate, the protection layer having an opening where the inner circuit is disposed;
    preparing a semiconductor die having an active surface and a plurality of bond pads formed on the active surface, and mounting the semiconductor die in the opening of the protection layer such that the plurality of bond pads contact the inner circuit, and a gap exists between the semiconductor die and the protection layer, wherein the semiconductor also has a back surface opposite to the active surface;
    preparing a heat-dissipating module comprising a heat-conducting device having a flat end surface at a distal end thereof, and disposing the distal end of the heat-conducting device into the opening of the protection layer; and
    contacting and bonding the flat end surface of the heat-conducting device with the back surface of the semiconductor die to complete the integrated circuit packaging.
  24. 24. The method of claim 23, further comprising the step of:
    filling a thermal adhesive into the gap between the semiconductor die and the protection layer.
  25. 25. The method of claim 23, further comprising the step of:
    by a casing, enclosing the heat-dissipating module, the protection layer, and the substrate.
  26. 26. The method of claim 25, wherein the casing has an opening and a retainer formed on the inner wall of the opening of the casing for clamping the substrate.
  27. 27. The method of claim 23, wherein the heat-dissipating module comprises at least one heat-dissipating fin disposed around a circumference of the heat-conducting device.
  28. 28. The method of claim 23, wherein the heat-conducting device is a heat pipe, a heat column, or a column made of a material with high thermal conductivity.
  29. 29. The method of claim 23, wherein the semiconductor die is a high power IC device.
  30. 30. The method of claim 23, wherein the semiconductor die is mounted on the first surface of the substrate by a flip-chip process.
US11417047 2005-05-06 2006-05-04 Integrated circuit packaging structure and method of making the same Abandoned US20060252179A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW94114755 2005-05-06
TW094114755 2005-05-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12709359 US7948767B2 (en) 2005-05-06 2010-02-19 Integrated circuit packaging structure and method of making the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12709359 Division US7948767B2 (en) 2005-05-06 2010-02-19 Integrated circuit packaging structure and method of making the same

Publications (1)

Publication Number Publication Date
US20060252179A1 true true US20060252179A1 (en) 2006-11-09

Family

ID=37394503

Family Applications (2)

Application Number Title Priority Date Filing Date
US11417047 Abandoned US20060252179A1 (en) 2005-05-06 2006-05-04 Integrated circuit packaging structure and method of making the same
US12709359 Active US7948767B2 (en) 2005-05-06 2010-02-19 Integrated circuit packaging structure and method of making the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12709359 Active US7948767B2 (en) 2005-05-06 2010-02-19 Integrated circuit packaging structure and method of making the same

Country Status (1)

Country Link
US (2) US20060252179A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100019378A1 (en) * 2008-07-25 2010-01-28 Andreas Krauss Semiconductor module and a method for producing an electronic circuit

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5223712B2 (en) * 2009-02-12 2013-06-26 パナソニック株式会社 Electronic circuit device for a compressor
US8824161B2 (en) 2012-06-15 2014-09-02 Medtronic, Inc. Integrated circuit packaging for implantable medical devices
US20130334680A1 (en) * 2012-06-15 2013-12-19 Medtronic, Inc. Wafer level packages of high voltage units for implantable medical devices and corresponding fabrication methods

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862481A (en) * 1972-10-14 1975-01-28 Philips Corp Method of manufacturing tubes provided with longitudinal grooves in inner wall and/or outer wall, and tubes manufactured by this method
US4633371A (en) * 1984-09-17 1986-12-30 Amdahl Corporation Heat pipe heat exchanger for large scale integrated circuits
US5294831A (en) * 1991-12-16 1994-03-15 At&T Bell Laboratories Circuit pack layout with improved dissipation of heat produced by high power electronic components
US5371404A (en) * 1993-02-04 1994-12-06 Motorola, Inc. Thermally conductive integrated circuit package with radio frequency shielding
US5465782A (en) * 1994-06-13 1995-11-14 Industrial Technology Research Institute High-efficiency isothermal heat pipe
US5471366A (en) * 1993-08-19 1995-11-28 Fujitsu Limited Multi-chip module having an improved heat dissipation efficiency
US5615086A (en) * 1994-05-17 1997-03-25 Tandem Computers Incorporated Apparatus for cooling a plurality of electrical components mounted on a printed circuit board
US5740019A (en) * 1994-09-06 1998-04-14 Samsung Electronics Co., Ltd. Apparatus for mounting a printed circuit board in a monitor case
US5847929A (en) * 1996-06-28 1998-12-08 International Business Machines Corporation Attaching heat sinks directly to flip chips and ceramic chip carriers
US6028770A (en) * 1996-01-25 2000-02-22 Siemens Aktiengesellschaft Control device, especially for a motor vehicle
US6147869A (en) * 1997-11-24 2000-11-14 International Rectifier Corp. Adaptable planar module
US6219243B1 (en) * 1999-12-14 2001-04-17 Intel Corporation Heat spreader structures for enhanced heat removal from both sides of chip-on-flex packaged units
US6229702B1 (en) * 1999-06-02 2001-05-08 Advanced Semiconductor Engineering, Inc. Ball grid array semiconductor package having improved heat dissipation efficiency, overall electrical performance and enhanced bonding capability
US6304451B1 (en) * 1999-12-01 2001-10-16 Tyco Electronics Logistics Ag Reverse mount heat sink assembly
US6362964B1 (en) * 1999-11-17 2002-03-26 International Rectifier Corp. Flexible power assembly
US6442026B2 (en) * 1999-12-13 2002-08-27 Kabushiki Kaisha Toshiba Apparatus for cooling a circuit component
US20030121645A1 (en) * 2001-12-28 2003-07-03 Tien-Lai Wang Heat dissipater for a central processing unit
US6819566B1 (en) * 2002-10-25 2004-11-16 International Business Machines Corporation Grounding and thermal dissipation for integrated circuit packages
US6867974B2 (en) * 2002-11-25 2005-03-15 Chin-Kuang Luo Heat-dissipating device
US7028759B2 (en) * 2003-06-26 2006-04-18 Thermal Corp. Heat transfer device and method of making same
US7411790B2 (en) * 2003-12-26 2008-08-12 Advanced Semiconductor Engineering Inc. Heat sink with built-in heat pipes for semiconductor packages

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275580A (en) 1992-03-25 1993-10-22 Nec Corp Semiconductor device
JPH06268122A (en) 1993-03-12 1994-09-22 Hitachi Ltd Semiconductor device
CN2422727Y (en) 2000-05-12 2001-03-07 讯凯国际股份有限公司 Radiator with heat-conducting pipe
CN1221027C (en) 2001-05-21 2005-09-28 矽品精密工业股份有限公司 Semiconductor package with heat sink structure
US6600651B1 (en) * 2001-06-05 2003-07-29 Macronix International Co., Ltd. Package with high heat dissipation
CN2572461Y (en) 2002-10-08 2003-09-10 陈勇 Pin fin type heat-pipe heat-sink

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862481A (en) * 1972-10-14 1975-01-28 Philips Corp Method of manufacturing tubes provided with longitudinal grooves in inner wall and/or outer wall, and tubes manufactured by this method
US4633371A (en) * 1984-09-17 1986-12-30 Amdahl Corporation Heat pipe heat exchanger for large scale integrated circuits
US5294831A (en) * 1991-12-16 1994-03-15 At&T Bell Laboratories Circuit pack layout with improved dissipation of heat produced by high power electronic components
US5371404A (en) * 1993-02-04 1994-12-06 Motorola, Inc. Thermally conductive integrated circuit package with radio frequency shielding
US5471366A (en) * 1993-08-19 1995-11-28 Fujitsu Limited Multi-chip module having an improved heat dissipation efficiency
US5615086A (en) * 1994-05-17 1997-03-25 Tandem Computers Incorporated Apparatus for cooling a plurality of electrical components mounted on a printed circuit board
US5465782A (en) * 1994-06-13 1995-11-14 Industrial Technology Research Institute High-efficiency isothermal heat pipe
US5740019A (en) * 1994-09-06 1998-04-14 Samsung Electronics Co., Ltd. Apparatus for mounting a printed circuit board in a monitor case
US6028770A (en) * 1996-01-25 2000-02-22 Siemens Aktiengesellschaft Control device, especially for a motor vehicle
US5847929A (en) * 1996-06-28 1998-12-08 International Business Machines Corporation Attaching heat sinks directly to flip chips and ceramic chip carriers
US6147869A (en) * 1997-11-24 2000-11-14 International Rectifier Corp. Adaptable planar module
US6229702B1 (en) * 1999-06-02 2001-05-08 Advanced Semiconductor Engineering, Inc. Ball grid array semiconductor package having improved heat dissipation efficiency, overall electrical performance and enhanced bonding capability
US6362964B1 (en) * 1999-11-17 2002-03-26 International Rectifier Corp. Flexible power assembly
US6304451B1 (en) * 1999-12-01 2001-10-16 Tyco Electronics Logistics Ag Reverse mount heat sink assembly
US6442026B2 (en) * 1999-12-13 2002-08-27 Kabushiki Kaisha Toshiba Apparatus for cooling a circuit component
US6219243B1 (en) * 1999-12-14 2001-04-17 Intel Corporation Heat spreader structures for enhanced heat removal from both sides of chip-on-flex packaged units
US20030121645A1 (en) * 2001-12-28 2003-07-03 Tien-Lai Wang Heat dissipater for a central processing unit
US6819566B1 (en) * 2002-10-25 2004-11-16 International Business Machines Corporation Grounding and thermal dissipation for integrated circuit packages
US6867974B2 (en) * 2002-11-25 2005-03-15 Chin-Kuang Luo Heat-dissipating device
US7028759B2 (en) * 2003-06-26 2006-04-18 Thermal Corp. Heat transfer device and method of making same
US7137443B2 (en) * 2003-06-26 2006-11-21 Thermal Corp. Brazed wick for a heat transfer device and method of making same
US7411790B2 (en) * 2003-12-26 2008-08-12 Advanced Semiconductor Engineering Inc. Heat sink with built-in heat pipes for semiconductor packages

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100019378A1 (en) * 2008-07-25 2010-01-28 Andreas Krauss Semiconductor module and a method for producing an electronic circuit
US8344502B2 (en) * 2008-07-25 2013-01-01 Robert Bosch Gmbh Semiconductor module and a method for producing an electronic circuit

Also Published As

Publication number Publication date Type
US20100140791A1 (en) 2010-06-10 application
US7948767B2 (en) 2011-05-24 grant

Similar Documents

Publication Publication Date Title
US6225695B1 (en) Grooved semiconductor die for flip-chip heat sink attachment
US7348665B2 (en) Liquid metal thermal interface for an integrated circuit device
US5699227A (en) Heat pipe to baseplate attachment method
US5367193A (en) Low cost, thermally efficient, and surface mountable semiconductor package for a high applied power VLSI die
US6785134B2 (en) Embedded liquid pump and microchannel cooling system
US4849857A (en) Heat dissipating interconnect tape for use in tape automated bonding
US5710459A (en) Integrated circuit package provided with multiple heat-conducting paths for enhancing heat dissipation and wrapping around cap for improving integrity and reliability
US6490160B2 (en) Vapor chamber with integrated pin array
US6256201B1 (en) Plate type heat pipe method of manufacturing same and cooling apparatus using plate type heat pipe
US20080042261A1 (en) Integrated circuit package with a heat dissipation device and a method of making the same
US6219243B1 (en) Heat spreader structures for enhanced heat removal from both sides of chip-on-flex packaged units
US6713856B2 (en) Stacked chip package with enhanced thermal conductivity
US6882041B1 (en) Thermally enhanced metal capped BGA package
US6661660B2 (en) Integrated vapor chamber heat sink and spreader and an embedded direct heat pipe attachment
US6081037A (en) Semiconductor component having a semiconductor chip mounted to a chip mount
US5880524A (en) Heat pipe lid for electronic packages
US5933323A (en) Electronic component lid that provides improved thermal dissipation
US4827376A (en) Heat dissipating interconnect tape for use in tape automated bonding
US6429513B1 (en) Active heat sink for cooling a semiconductor chip
US5513070A (en) Dissipation of heat through keyboard using a heat pipe
US6744136B2 (en) Sealed liquid cooled electronic device
US5940271A (en) Stiffener with integrated heat sink attachment
US7515415B2 (en) Embedded microchannel cooling package for a central processor unit
US20050117296A1 (en) Ball grid array package with heat sink device
US7967062B2 (en) Thermally conductive composite interface, cooled electronic assemblies employing the same, and methods of fabrication thereof

Legal Events

Date Code Title Description
AS Assignment

Owner name: NEOBULB TECHNOLOGIES, INC., BRUNEI DARUSSALAM

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CHEN, JEN-SHYAN;REEL/FRAME:017835/0771

Effective date: 20060427