JPS587344U

JPS587344U - Package for high frequency semiconductor devices

Info

Publication number: JPS587344U
Application number: JP10056381U
Authority: JP
Inventors: 平井　健次; 狩集　敬一郎
Original assignee: 株式会社東芝
Priority date: 1981-07-08
Filing date: 1981-07-08
Publication date: 1983-01-18

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図及び第２図は高周波回路内に装荷された状態で示
され、半導体素子を収納している従来のパッケージに係
る一部断面正面図、第３図はこの考案の高周波半導体素
子用パッケージの一実施例に係るイ平面図、ロ一部断面
正面図、および第４図は第３図ノ）ツケージを高周波回
路内に装荷した状態で説明するための一部断面正面図、
第５図、第６図はこの考案の半導体素子用パッケージの
それぞれ他の実施例に係る一部断面正面図である。−各
図で１・・・・・・パッケージ、２・・・・・・電極基
板、１１・・・・・・セラミックス製筒体、３・・・・
・・半田、１２・・・・・・金属フランジ、４・・・・
・・金属導体棒、１３・・・・・・下部電極、１４・・
・・・・金属フランジ、１５．１５’。１５’、１５　　・・・・・・キャップ、１６．１６’
。１６″、１６“′・・・・・・上部電極、１７．　１８
．　１９・・・・・・堰堤。1 and 2 are partially sectional front views of a conventional package housing a semiconductor device, shown loaded in a high-frequency circuit, and FIG. 3 is a package for a high-frequency semiconductor device according to the present invention. FIG. 4 is a partially sectional front view for explaining a state in which the cage is loaded in a high frequency circuit, and FIG.
FIGS. 5 and 6 are partially sectional front views of other embodiments of the semiconductor device package of this invention. -In each figure, 1...package, 2...electrode substrate, 11...ceramic cylinder, 3...
...Solder, 12...Metal flange, 4...
...Metal conductor rod, 13...Lower electrode, 14...
...Metal flange, 15.15'. 15', 15...Cap, 16.16'
. 16'', 16'''...upper electrode, 17. 18
．． 19...Weir.

Claims

[Scope of utility model registration request]

The upper electrode of the package seals the semiconductor element by attaching the upper electrode to one end face and the lower electrode to the other end face.
A high-frequency semiconductor device package characterized by having a dam protruding from its upper surface.