JPS5873135A - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法

Info

Publication number
JPS5873135A
JPS5873135A JP17222581A JP17222581A JPS5873135A JP S5873135 A JPS5873135 A JP S5873135A JP 17222581 A JP17222581 A JP 17222581A JP 17222581 A JP17222581 A JP 17222581A JP S5873135 A JPS5873135 A JP S5873135A
Authority
JP
Japan
Prior art keywords
layer
glass layer
window
phosphorus
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17222581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249737B2 (enExample
Inventor
Seiichiro Takabayashi
誠一郎 高林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17222581A priority Critical patent/JPS5873135A/ja
Publication of JPS5873135A publication Critical patent/JPS5873135A/ja
Publication of JPS6249737B2 publication Critical patent/JPS6249737B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP17222581A 1981-10-28 1981-10-28 半導体装置とその製造方法 Granted JPS5873135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17222581A JPS5873135A (ja) 1981-10-28 1981-10-28 半導体装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17222581A JPS5873135A (ja) 1981-10-28 1981-10-28 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JPS5873135A true JPS5873135A (ja) 1983-05-02
JPS6249737B2 JPS6249737B2 (enExample) 1987-10-21

Family

ID=15937913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17222581A Granted JPS5873135A (ja) 1981-10-28 1981-10-28 半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JPS5873135A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140847A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd 半導体装置
JPS61283146A (ja) * 1985-06-10 1986-12-13 Nec Corp 半導体集積回路装置及びその製造方法
JPS62274641A (ja) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140847A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd 半導体装置
JPS61283146A (ja) * 1985-06-10 1986-12-13 Nec Corp 半導体集積回路装置及びその製造方法
JPS62274641A (ja) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6249737B2 (enExample) 1987-10-21

Similar Documents

Publication Publication Date Title
US6894334B2 (en) Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
US4821085A (en) VLSI local interconnect structure
US5734200A (en) Polycide bonding pad structure
JPH0612799B2 (ja) 積層型半導体装置およびその製造方法
US5972759A (en) Method of making an integrated butt contact having a protective spacer
JPH08130246A (ja) 半導体装置とその製造方法
US20010002072A1 (en) Creation of subresolution features via flow characteristics
JPS5873135A (ja) 半導体装置とその製造方法
US5543361A (en) Process for forming titanium silicide local interconnect
US5926697A (en) Method of forming a moisture guard ring for integrated circuit applications
EP0289089B1 (en) Method of manufacturing a semiconductor device having interconnections located both above a semiconductor region and above an isolation region adjoining it
US6544866B2 (en) Semiconductor device fabricated on multiple substrate
US5391519A (en) Method for increasing pad bonding of an IC (1)
US5869391A (en) Semiconductor method of making electrical connection between an electrically conductive line and a node location, and integrated circuitry
US6965155B2 (en) Semiconductor device with glue layer in opening
JP3447871B2 (ja) 配線の形成方法及び半導体素子の形成方法
JPS63253647A (ja) 半導体装置
JPH09172078A (ja) 半導体装置の配線構造及びその形成方法
US6429520B1 (en) Semiconductor component with silicon wiring and method of fabricating the component
JPS584456B2 (ja) Ｍｏｓ シユウセキカイロ
KR100728945B1 (ko) 금속라인의 형성방법
JPH03116852A (ja) 半導体装置
TW586217B (en) Non-volatile memory device structure
JPH03171734A (ja) 半導体装置
JPH0411766A (ja) 半導体メモリ