JPS5871644A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a semiconductor element from static electricity breakdown by a method wherein all wirings are shortcircuited since a package is engaged with a conductive frame so that the package may be supplied with current from any potential element through the intermediary of the sides of said conductive frame. CONSTITUTION:A ceramic package 11 is engaged with a box type conductive frame 12 covering the surface and sides of edges of the package 11 to be removed at any time. The conductive frame 12 made of conductive rubber etc. say silicon resin mixed with metallic particles such as silver (Ag), copper (Cu), carbon (C) etc. or any other conductive material particles is naturally conductive and elastic. The conductive frame 12 formed of elastic material is engaged with the ceramic package 11 by means of pressure fitting and the like to be removed at any time. Sufficient thickness is 0.5-1mm.. Through these procedures, all internal wirings may be shortcircuited making all potential even.

Description

[Detailed Description of the Invention] The present invention relates to the structure of a semiconductor device and has a plug-in/
This invention relates to the external structure of a semiconductor device enclosed in a type of package.

In highly integrated semiconductor integrated circuits (ICs).

A plug-in type ceramic package is used in which internal wiring is formed in multiple layers and a number of connection vias are arranged in one or more rows on the bottom surface. When electroplating gold (Au) etc. on the bonding pad of the internal wiring of the wrinkled package, the electrode pins electrically connected to the internal wiring, the chip stage, etc., for example, dual in. In the case of a line-type ceramic package, the lead frame that connects multiple external leads is electrically connected to each internal wiring.

Plating can be easily performed by applying a potential to the lead frame as a plating electrode.
In the case of this plug-in e type package, each internal wiring is independent, so it is necessary to apply a potential to all internal wiring as plating electrodes, and it is extremely difficult to apply electroplating to the part to be plated. Have difficulty. Therefore, in a plug-in type package, the end face of the internal wiring formed in multiple layers is exposed on the side of the package, and electrically connected to the end face of each internal wiring is placed on the side face. A series of plating electrodes are formed, and a potential is applied from the electrodes to the part to be plated exposed on the package to perform plating. After plating is completed, the plating electrode is scraped off from the side surface of the package to separate the internal wirings individually. Therefore, in such a plug-in type package, the end face of the internal wiring is exposed on the side surface. Therefore, in a semiconductor device formed using a package with this structure, when handling the semiconductor device, a potential is applied to the internal wiring from a fingertip or the like that touches the side of the package, causing electrostatic damage to the semiconductor element. There is still time.

The present invention relates to a semiconductor device formed by the above-mentioned plug-in e type package. The present invention provides a structure that prevents electrostatic damage to semiconductor elements.

That is, the present invention provides a semiconductor device in which a semiconductor element is mounted on a ceramic package in which the end face of internal wiring is exposed on the 11th side. It is characterized by being expressed as follows.

Embodiments of the present invention will be described in detail below using FIG. 9. FIG. 1 is a schematic side view of a ceramic package, and FIGS. 2, 3, and 4 are a perspective view (a) and a sectional view (b) of a main part of different embodiments, respectively.

The structure of the plug-in type ceramic package constituting the semiconductor device of the present invention is conceptually shown in FIG. 1, which is a schematic side view.

1 represents a laminated ceramic substrate (package base), 2 represents internal wiring, 3 represents a through hole, and 4 represents an electrode pin. That is, in this package, as shown in FIG. 1, the end faces of the internal wiring 2 of each layer are exposed on the side surface of the laminated ceramic substrate 1, which is the base of the package. Nine electrode bins 4 disposed on the lower surface of the laminated ceramic substrate 1 are electrically connected to the internal wiring m2 via through holes 3, respectively. Also, although not shown, some of the internal wiring
b E: y The chip stage connected to the contact pad area and specific internal wiring is the multilayer ceramic substrate 1
It is exposed above. Internal wiring, conductive films in through holes, etc. applied to one side of the laminated ceramic substrate are usually formed of a metal layer such as tungsten (W) or molybdenum (Mo), and are exposed from the substrate. bonding pad area (not shown), chip stage (
(not shown) and the electrode pin 4 are plated with Au.゛In a semiconductor device to which the present invention is applied, a chip such as a semiconductor IC is brazed on a chip stage of a ceramic package as described above, and wiring pads of the semiconductor chip and bonding pads of the internal wiring are connected to each other. These are formed by connecting them with wire bonding. Therefore, the electrostatic breakdown of the device as described above occurs.

FIGS. 2(&) and 2(b) are a perspective view and a sectional view of a main part of an embodiment in which the present invention is applied to a semiconductor device constituted by the above-mentioned plug-in type ceramic package. That is, in this embodiment, a box-shaped conductive frame 12 is removably fitted onto the ceramic package 11 to cover the top and side surfaces of the edges. The conductive frame is made of silver (Al) and copper (Cu).

It has conductivity and elasticity, such as a conductive rubber obtained by mixing metal particles such as carbon C or conductive substance particles into silicone resin, for example. Ceramic package II is formed of an elastic material and is formed by a method such as press-fitting.
K is removably fitted. Also, its thickness is 0.5 to 1 [■
] is sufficient. By doing this, the internal wiring is short-circuited and all are kept at the same potential. In addition, in the figure 13
is the cap, 14 is the metallized pattern for the seal, 1
5 is an electrode bin, 16 is an internal wiring, and 17 is an IC chip.

18 is a bonding wire, and 19 is a through hole.

FIGS. 3(a) and 3(b) are a perspective view and a sectional view of essential parts in another embodiment of the present invention. That is, in this embodiment, only the side surface of the ceramic package 11 is made of conductive and stretchable rubber material, etc., which is removably fitted onto the side surface. ) and is covered with a conductive frame 22 having a thickness of about 100 mm. In addition, other symbols in the figures indicate the same parts as in FIGS. 2<a) and (b).

FIGS. 4(a) and 4(b) are a perspective view and a sectional view of a main part of an embodiment of the present invention other than the above. That is, in this embodiment, the side surface of the ceramic fist package 11 is made of a conductive and stretchable rubber material with a thickness of about 0.5 [Iris], and the side surface of the ceramic fist package 11 is made of a rubber material having a thickness of about 0.5 [Iris]. A conductive frame 32 with a bent brim is detachably fitted. In this figure, other symbols indicate the same parts as in FIGS. 2(a) and 2(b).

As explained above with reference to the embodiments, one plug of the present invention
In a semiconductor device using an in-type ceramic package, the end surface of the internal wiring 16 exposed on the side surface of the package is conductive and elastic.
, conductive frame 12.22..32 with a thickness of about 5 to 1 (dragon)
%, and is fitted onto the semiconductor device to prevent electrostatic damage before the semiconductor device is mounted, and can be easily removed during performance testing or mounting of the semiconductor device. In the examples, the case where an elastic material having conductivity and stretchability was used was explained, but copper (C
u) The object of the present invention can also be achieved by forming a conductive frame such as the conductive frame 22 shown in FIG. 2 using a metal with good conductivity such as solder. Note that a conductive material such as a conductive film may be applied to the inner surface of the insulating frame.

As described above, according to the present invention, even if an object having a potential such as an instruction touches the side of the package when handling the semiconductor device, the conductive frame is fitted and all the wiring is short-circuited, so that all the wiring is Charged up at the same time. Therefore, since no potential is applied locally, such as between the gate electrode and the drain/electrode of the semiconductor element, electrostatic damage to the semiconductor element sealed in the package can be completely prevented.

[Brief explanation of drawings]

FIG. 1 is a schematic side view of a plug-in type ceramic package, and FIGS. 2 to 4 are a perspective view (a) and a sectional view (b) of a main part of a different embodiment of the present invention. . In the figure, 1 is a laminated ceramic board (package base)
, 2.16 is internal wiring, 3.19 is through hole, 4.
15 is tW pi/, 11 is ceramic package, 12
, 22. 32 is a conductive frame, 13 is a cap, 14 is a metallized pattern for sealing, 17 is an IC chip, and 18 is a bonding wire.

Claims (1)

[Claims] A semiconductor device in which a semiconductor element is mounted on a ceramic package with an end face of internal wiring exposed on the side surface, characterized in that a conductive frame covering the side surface of the ceramic package is removably fitted. semiconductor devices.