JPS5868990A - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- JPS5868990A JPS5868990A JP56166325A JP16632581A JPS5868990A JP S5868990 A JPS5868990 A JP S5868990A JP 56166325 A JP56166325 A JP 56166325A JP 16632581 A JP16632581 A JP 16632581A JP S5868990 A JPS5868990 A JP S5868990A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- hole
- substrate
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 239000003365 glass fiber Substances 0.000 abstract description 5
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004891 communication Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】 １）発明の技術分野 本発明は、光通信用発光ダイオードの構造ｄ二関する。[Detailed description of the invention] 1) Technical field of invention The present invention relates to a structure of a light emitting diode for optical communication.
近年、光通信用光源としてのＧａＡＪＡｓ／ＧａＡｓ系
発翼ダイオードの進歩は著しく、一部は実用の段階にき
ている。また、光通信技術の高度化、多様化（二ともな
って、光源に対して高出力化、高速化が要請されてきて
おｐ、＊ζ二高出力化（一対しては素子構造に種々の工
夫がなされている。In recent years, GaAJAs/GaAs winged diodes as light sources for optical communications have made remarkable progress, and some of them have reached the stage of practical use. In addition, optical communication technology has become more sophisticated and diversified (both of which have led to demands for higher output and higher speed for light sources, and *ζ2). Efforts have been made.
２）従来技術
１８１図４−１従来例として、ダブルへテロ構造造のパ
２ス（Ｂｕｒｒｕｓ ）型発光ダイオードの一断函図、
を−示す。ｎ ＧａＡｓ基板（１）（二、例えば液相成
長法（二よって、タプルヘテロ構造のエピタキシャル層
（２） 、 （３）、（４）を設け、更（＝Ｐ側電極（
陽極）金属（７）とのオーム性接触を得るためｐ Ｇａ
Ａｓ Ｊ＊（５）を成長させる。（６）は動作電流密度
を増大させるための絶縁膜、例えば８１０１層である。2) Prior art 181 Figure 4-1 As a conventional example, a cutaway box diagram of a Burrus type light emitting diode with a double heterostructure structure;
- indicates. n GaAs substrate (1) (2, for example, by liquid phase growth method (2), epitaxial layers (2), (3), (4) of tuple heterostructure are provided, and further (=P side electrode (
anode) p Ga to obtain ohmic contact with the metal (7)
Grow As J*(5). (6) is an insulating film for increasing the operating current density, for example, an 8101 layer.
基板（１）の他Ｏ面毫二は、光を取シ出すための穴（８
）をあけ、穴の周囲にｎ儒電゛極（陰極）金属（９）が
被着されている。さらに、焦光性を向上させるため、球
レンズ←・が配設しである。電極（力および（９）間に
通電することシーよって、活性層（３）で発光した光の
一部は球レンズ員を通って外部に取）出される。外部６
二取ｐ出された光を効率よくガラスファイバに結合する
ためには、動作電流を活性層の狭い領域ζ二集中するこ
とが必要である。In addition to the substrate (1), the second O surface has holes (8) for extracting light.
) is made, and a metal electrode (cathode) (9) is deposited around the hole. Additionally, a ball lens is provided to improve focusing performance. By applying current between the electrodes (9), a part of the light emitted by the active layer (3) is extracted to the outside through the ball lens member. External 6
In order to efficiently couple the extracted light into the glass fiber, it is necessary to concentrate the operating current in a narrow region of the active layer.
３）従来技術の問題点
このような従来の構造においては次の欠点がある。第１
に、光を外部に取りだすための穴（８）があるため、基
板に接近している活性層中央部の伏吟領域に動作電流を
集中させることが困難である。このため、活性層の比較
的広い領域で元元し、球レンズ橢よる焦光性を低下させ
ることＩＳなる。第２の欠点として、動作時の熱抵抗を
緩和するため、通常Ｐサイドダウン（Ｐｒｉｄｅｄｏ■
）の形で唇讐金属を介して熱伝導性の良い基体上に配設
されるが、この場合、融着金属と活性ノーとの間隔は通
常１０〜１５μｍ程度であるため、素子端面に露出して
いる活性層に融着金属が付層し、特性不良の原因となる
ことが多い。3) Problems with the prior art This conventional structure has the following drawbacks. 1st
Since there is a hole (8) for extracting light to the outside, it is difficult to concentrate the operating current in a closed region at the center of the active layer that is close to the substrate. Therefore, IS is generated in a relatively wide area of the active layer, and the focusing property due to the spherical lens is reduced. The second drawback is that P-side down (Pride
) on a base with good thermal conductivity via a metal between the edges, but in this case, the distance between the fused metal and the active layer is usually about 10 to 15 μm, so the element is exposed at the end face of the element. The fused metal is often deposited on the active layer, which often causes poor characteristics.
４）発明の目的
不発明は、上記欠点を除去し、ガラスファイバとの光結
合効率を向上させ、かつ信頼性の高い発光ダイオードを
提供することを目的とする。4) Objective of the Invention The object of the invention is to eliminate the above-mentioned drawbacks, improve the optical coupling efficiency with glass fiber, and provide a highly reliable light emitting diode.
すなわち、ＧａＡｓ基板（；電極形成用の穴をあけ、穴
の内部および庵辺部＜ｘｉ電極金属被着して、−謝金属
を介して基体上に配設する発光ダイオードを提供するも
のである。That is, a light emitting diode is provided in which a GaAs substrate (a hole for electrode formation is made, an electrode metal is deposited on the inside of the hole and at the bottom part, and then arranged on the substrate through a metal layer). .
Ｓ）発明の実施例 以下実施例：二よって本発明の詳細な説明する。S) Examples of the invention EXAMPLE 2 The present invention will be described in detail below in Example 2.
第２図は、本発明（二よってなされたＧａＡＡｉＡａ／
ＧａＡｓ発光ダイオードの一断面図である。ｎＧａＡｓ
基板（１）の−面ζ一液相成長法（＝よって、ｎＧａｏ
、、。FIG. 2 shows the GaAAiAa/
1 is a cross-sectional view of a GaAs light emitting diode. nGaAs
-plane ζ of substrate (1) one liquid phase growth method (=therefore, nGao
,,.
ＡＪａａＡＳ層（２）、活性層としてＰ Ｇａ（、、Ｂ
Ａ１１ａ、ｏｙ Ａｓ ７ｍ（３）、Ｐ Ｇａ０ＪＩ
Ｉ ）ｄＪｏ、５ｌｌＡｓ層（４）、′磁極（７）との
オーム性接触を得るためのｐ ＧａｏΔＩＪｒｙ）１
Ａ１４層（５）をそれぞれエピタキシャル成長させた。AJaaAS layer (2), P Ga (,,B
A11a,oy As 7m(3),P Ga0JI
I) dJo, 5llAs layer (4), 'pGaoΔIJry)1 to obtain ohmic contact with the magnetic pole (7)
Each A14 layer (5) was epitaxially grown.
次に通常の方法シニよって、エピタキシャル層（５）の
上（二ｐ側電極を形成するための５ｉＯ１絶縁層（６）
と電極金属（７）を被着し、シリコン樹脂（１１）ｌ二
よって球レンズＣＩＯ＋を固定できるようにする。次に
、基板（１）の他の囲（：、ｐ側電極４二対向して、穴
（８）をあけ、この穴の内部および周辺にｎ１ｉｌｌ電
極を形成するだめの電極金属（９）を被着する。以上の
ようにして１ａ作した発光ダイオードを融着金属を介し
て、ｐサイドアップ（Ｐ ５ｉｄｅ ｕｐ ）の形で基
体上に配設し、ｗ！特性を測定した。その結果、近視野
像から、活性層中央部の発光領域は、大きさで約２分の
１に縮小し、動作電流密度の増大が観測され、た。Next, by the usual method, a 5iO1 insulating layer (6) is formed on top of the epitaxial layer (5) to form the two p-side electrodes.
and electrode metal (7), and the ball lens CIO+ can be fixed with silicone resin (11). Next, a hole (8) is made in the other side of the substrate (1), facing the p-side electrode 4, and a second electrode metal (9) is placed inside and around this hole to form the n1ill electrode. The light emitting diode 1a fabricated as described above was placed on a substrate in the form of p side up (P5ide up) via a fused metal, and the w! characteristics were measured.As a result, From the near-field image, it was observed that the light-emitting region at the center of the active layer was reduced in size by about half, and the operating current density was increased.
盪たカラスファイバとの光結合は従来に比較し約１．６
倍に増大した。ｐサイドアップの・形で基体・（−配設
して馳るため、活性層が融着金属によって汚染されるこ
と（：よる特性の劣化は認められなかった。The optical coupling with the glass fiber is approximately 1.6 compared to the conventional method.
It has doubled. Since the substrate was disposed with the p side up, the active layer was contaminated by the fused metal, and no deterioration in properties was observed.
υ）発明の効果
不発明は次の効果を有する。（１）従来のバラス形尤光
ダイオードのように、光を取り出すための穴（二よって
活性層中央部の狭い領域への胤渡来中が粗害されること
なく、動作電流密度を増大せしめることができる。これ
（−よって、値小領域からの発光が可シヒとなり、ガラ
スファイバとの光結合の効率が増大する。（２）発光ダ
イオードを基体に配設する際し、融着憾属と活性層の１
：ｊｌに基板が−７３：′＆：、するため、融着金属の
活性層測佃への汚染を防止することができ、％性の安定
化に有効でめる。υ) Effects of invention Non-invention has the following effects. (1) Unlike conventional ballast-type photodiodes, the hole for extracting light (2) allows the operating current density to be increased without being damaged during seed transfer to the narrow area in the center of the active layer. This (-) allows light emission from the small value region and increases the efficiency of optical coupling with the glass fiber. (2) When disposing the light emitting diode on the substrate, it is necessary to layer 1
Since the substrate is -73:'&: at :jl, it is possible to prevent the contamination of the active layer by the fused metal, which is effective in stabilizing the % property.
第ＩＬ４８Ｉは従来の発光ダイオードを示す概略断面図
、第２図は本発明の一実施例を示す概略断面図でおる。IL48I is a schematic sectional view showing a conventional light emitting diode, and FIG. 2 is a schematic sectional view showing an embodiment of the present invention.
Claims (1)
ピタキシャル層および前記基板の他の面に設けられた電
極とから成る発光ダイオードにおいて、Ａｔ＋ 記エピ
タキシャル層に殴けた電極り対向して前記基板に穴をあ
け、前記穴の内部および周辺に電極金属な被着したこと
を特徴とする発光ダイオード。In a light emitting diode comprising a plurality of epitaxial layers provided on one surface of a substrate, and electrodes provided on the epitaxial layers and the other surface of the substrate, a hole is formed in the substrate opposite to the electrode punched in the At+ epitaxial layer. 1. A light emitting diode, characterized in that a hole is formed and an electrode metal is deposited inside and around the hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56166325A JPS5868990A (en) | 1981-10-20 | 1981-10-20 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56166325A JPS5868990A (en) | 1981-10-20 | 1981-10-20 | Light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5868990A true JPS5868990A (en) | 1983-04-25 |
Family
ID=15829259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56166325A Pending JPS5868990A (en) | 1981-10-20 | 1981-10-20 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868990A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554877A (en) * | 1988-05-06 | 1996-09-10 | Sharp Kabushiki Kaisha | Compound semiconductor electroluminescent device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5273510U (en) * | 1975-11-28 | 1977-06-01 | ||
| JPS55120918U (en) * | 1979-02-21 | 1980-08-27 | ||
| JPS56102029U (en) * | 1979-12-30 | 1981-08-11 |
-
1981
- 1981-10-20 JP JP56166325A patent/JPS5868990A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5273510U (en) * | 1975-11-28 | 1977-06-01 | ||
| JPS55120918U (en) * | 1979-02-21 | 1980-08-27 | ||
| JPS56102029U (en) * | 1979-12-30 | 1981-08-11 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554877A (en) * | 1988-05-06 | 1996-09-10 | Sharp Kabushiki Kaisha | Compound semiconductor electroluminescent device |
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