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JPS61280687A - Buried type light emission diode - Google Patents

Buried type light emission diode

Info

Publication number
JPS61280687A
JPS61280687A JP12140885A JP12140885A JPS61280687A JP S61280687 A JPS61280687 A JP S61280687A JP 12140885 A JP12140885 A JP 12140885A JP 12140885 A JP12140885 A JP 12140885A JP S61280687 A JPS61280687 A JP S61280687A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
type
activation
gainasp
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12140885A
Inventor
Takayuki Matsuyama
Akira Tanaka
Original Assignee
Toshiba Corp
Toshiba Electron Device Eng Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve a coupling efficiency with an optical fiber and facilitate taking-out of light from the side of a crystal growth layer by a method wherein a cladding layer is composed of a semiconductor crystal layer which has a larger refractive index than burying layers and has a smaller forbidden band width than an activation layer and the light emitted from the activation layer is guided to the side of the crystal growth layer.
CONSTITUTION: An N-type InP buffer layer 32, a GaInAsP activation layer 34, a P-type GaInAsP cladding layer 36 and a P+ type GaInAsP ohmic layer 38 are formed on an N-type InP substrate 30 by crystal growth. After an SiO2 film is deposited, a mesa part is formed. Further, burying layers consisting of a P-type InP layer 40, an N-type InP layer 42 and an N-type GaInAsP cap layer 44 are successively formed by liquid phase crystal growth to bury the side surface of the mesa. By employing the GaInAsP layers, which have a smaller refractive index than the activation layer 34 and have a larger refractive index than the burying layers 40 and 42, as the cladding layer 36 and the ohmic layer 38, the light emitted from the activation layer 34 is efficiently guided to a window 48 for taking out the light by utilizing the cladding layer 36 as a waveguide layer.
COPYRIGHT: (C)1986,JPO&Japio
JP12140885A 1985-06-06 1985-06-06 Buried type light emission diode Pending JPS61280687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12140885A JPS61280687A (en) 1985-06-06 1985-06-06 Buried type light emission diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12140885A JPS61280687A (en) 1985-06-06 1985-06-06 Buried type light emission diode

Publications (1)

Publication Number Publication Date
JPS61280687A true true JPS61280687A (en) 1986-12-11

Family

ID=14810436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12140885A Pending JPS61280687A (en) 1985-06-06 1985-06-06 Buried type light emission diode

Country Status (1)

Country Link
JP (1) JPS61280687A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179179A (en) * 1986-01-31 1987-08-06 Oki Electric Ind Co Ltd Light emitting device and manufacture of same
US6614821B1 (en) * 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179179A (en) * 1986-01-31 1987-08-06 Oki Electric Ind Co Ltd Light emitting device and manufacture of same
US6614821B1 (en) * 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US6983004B2 (en) 1999-08-04 2006-01-03 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US7139297B2 (en) 1999-08-04 2006-11-21 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US7684456B2 (en) 1999-08-04 2010-03-23 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US8009714B2 (en) 1999-08-04 2011-08-30 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US8537870B2 (en) 1999-08-04 2013-09-17 Ricoh Company, Limited Laser diode and semiconductor light-emitting device producing visible-wavelength radiation

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