JPS5868968A - 固体光電変換装置 - Google Patents

固体光電変換装置

Info

Publication number
JPS5868968A
JPS5868968A JP56168092A JP16809281A JPS5868968A JP S5868968 A JPS5868968 A JP S5868968A JP 56168092 A JP56168092 A JP 56168092A JP 16809281 A JP16809281 A JP 16809281A JP S5868968 A JPS5868968 A JP S5868968A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
light
charge storage
conversion device
electric charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56168092A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337743B2 (enrdf_load_stackoverflow
Inventor
Katsunori Hatanaka
勝則 畑中
Shunichi Uzawa
鵜沢　俊一
Yutaka Hirai
裕 平井
Naoki Ayada
綾田　直樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56168092A priority Critical patent/JPS5868968A/ja
Publication of JPS5868968A publication Critical patent/JPS5868968A/ja
Publication of JPH0337743B2 publication Critical patent/JPH0337743B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP56168092A 1981-10-21 1981-10-21 固体光電変換装置 Granted JPS5868968A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56168092A JPS5868968A (ja) 1981-10-21 1981-10-21 固体光電変換装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56168092A JPS5868968A (ja) 1981-10-21 1981-10-21 固体光電変換装置

Publications (2)

Publication Number Publication Date
JPS5868968A true JPS5868968A (ja) 1983-04-25
JPH0337743B2 JPH0337743B2 (enrdf_load_stackoverflow) 1991-06-06

Family

ID=15861691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56168092A Granted JPS5868968A (ja) 1981-10-21 1981-10-21 固体光電変換装置

Country Status (1)

Country Link
JP (1) JPS5868968A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0352462A (ja) * 1989-07-20 1991-03-06 Hamamatsu Photonics Kk 固体撮像装置
US9077288B2 (en) 2013-05-17 2015-07-07 Nlt Technologies, Ltd. Amplifier circuit and image sensor using amplifier circuit
US9698184B2 (en) 2014-07-23 2017-07-04 Nlt Technologies, Ltd. Image sensor and driving method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0352462A (ja) * 1989-07-20 1991-03-06 Hamamatsu Photonics Kk 固体撮像装置
US9077288B2 (en) 2013-05-17 2015-07-07 Nlt Technologies, Ltd. Amplifier circuit and image sensor using amplifier circuit
US9698184B2 (en) 2014-07-23 2017-07-04 Nlt Technologies, Ltd. Image sensor and driving method thereof
US9865644B2 (en) 2014-07-23 2018-01-09 Nlt Technologies, Ltd. Image sensor

Also Published As

Publication number Publication date
JPH0337743B2 (enrdf_load_stackoverflow) 1991-06-06

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