JPS5868965A - 受光素子の製造方法 - Google Patents

受光素子の製造方法

Info

Publication number
JPS5868965A
JPS5868965A JP56167208A JP16720881A JPS5868965A JP S5868965 A JPS5868965 A JP S5868965A JP 56167208 A JP56167208 A JP 56167208A JP 16720881 A JP16720881 A JP 16720881A JP S5868965 A JPS5868965 A JP S5868965A
Authority
JP
Japan
Prior art keywords
receiving element
substrate
film
light
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56167208A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0451983B2 (enrdf_load_stackoverflow
Inventor
Yasuo Tanaka
靖夫 田中
Toshihisa Tsukada
俊久 塚田
Akira Sasano
笹野　晃
Taiji Shimomoto
下元　泰治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56167208A priority Critical patent/JPS5868965A/ja
Priority to US06/357,076 priority patent/US4412900A/en
Priority to DE8282301284T priority patent/DE3276889D1/de
Priority to EP82301284A priority patent/EP0060699B1/en
Priority to CA000398275A priority patent/CA1168739A/en
Priority to KR8201078A priority patent/KR860000160B1/ko
Publication of JPS5868965A publication Critical patent/JPS5868965A/ja
Publication of JPH0451983B2 publication Critical patent/JPH0451983B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photovoltaic Devices (AREA)
JP56167208A 1981-03-13 1981-10-21 受光素子の製造方法 Granted JPS5868965A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56167208A JPS5868965A (ja) 1981-10-21 1981-10-21 受光素子の製造方法
US06/357,076 US4412900A (en) 1981-03-13 1982-03-11 Method of manufacturing photosensors
DE8282301284T DE3276889D1 (en) 1981-03-13 1982-03-12 Method of manufacturing photosensors
EP82301284A EP0060699B1 (en) 1981-03-13 1982-03-12 Method of manufacturing photosensors
CA000398275A CA1168739A (en) 1981-03-13 1982-03-12 Method of manufacturing photosensors
KR8201078A KR860000160B1 (ko) 1981-03-13 1982-03-13 수광소자의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56167208A JPS5868965A (ja) 1981-10-21 1981-10-21 受光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5868965A true JPS5868965A (ja) 1983-04-25
JPH0451983B2 JPH0451983B2 (enrdf_load_stackoverflow) 1992-08-20

Family

ID=15845420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56167208A Granted JPS5868965A (ja) 1981-03-13 1981-10-21 受光素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5868965A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02140853U (enrdf_load_stackoverflow) * 1989-04-26 1990-11-26
US5162644A (en) * 1988-03-14 1992-11-10 Hitachi, Ltd. Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342693A (en) * 1976-09-29 1978-04-18 Rca Corp Semiconductor device including amorphous silicone layer
JPH0214790A (ja) * 1988-05-06 1990-01-18 Steamatic Inc エアダクトの清掃装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342693A (en) * 1976-09-29 1978-04-18 Rca Corp Semiconductor device including amorphous silicone layer
JPH0214790A (ja) * 1988-05-06 1990-01-18 Steamatic Inc エアダクトの清掃装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162644A (en) * 1988-03-14 1992-11-10 Hitachi, Ltd. Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source
JPH02140853U (enrdf_load_stackoverflow) * 1989-04-26 1990-11-26

Also Published As

Publication number Publication date
JPH0451983B2 (enrdf_load_stackoverflow) 1992-08-20

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