JPH0451983B2 - - Google Patents
Info
- Publication number
- JPH0451983B2 JPH0451983B2 JP56167208A JP16720881A JPH0451983B2 JP H0451983 B2 JPH0451983 B2 JP H0451983B2 JP 56167208 A JP56167208 A JP 56167208A JP 16720881 A JP16720881 A JP 16720881A JP H0451983 B2 JPH0451983 B2 JP H0451983B2
- Authority
- JP
- Japan
- Prior art keywords
- receiving element
- film
- conductive layer
- light
- type conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
- H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56167208A JPS5868965A (ja) | 1981-10-21 | 1981-10-21 | 受光素子の製造方法 |
US06/357,076 US4412900A (en) | 1981-03-13 | 1982-03-11 | Method of manufacturing photosensors |
DE8282301284T DE3276889D1 (en) | 1981-03-13 | 1982-03-12 | Method of manufacturing photosensors |
EP82301284A EP0060699B1 (en) | 1981-03-13 | 1982-03-12 | Method of manufacturing photosensors |
CA000398275A CA1168739A (en) | 1981-03-13 | 1982-03-12 | Method of manufacturing photosensors |
KR8201078A KR860000160B1 (ko) | 1981-03-13 | 1982-03-13 | 수광소자의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56167208A JPS5868965A (ja) | 1981-10-21 | 1981-10-21 | 受光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5868965A JPS5868965A (ja) | 1983-04-25 |
JPH0451983B2 true JPH0451983B2 (enrdf_load_stackoverflow) | 1992-08-20 |
Family
ID=15845420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56167208A Granted JPS5868965A (ja) | 1981-03-13 | 1981-10-21 | 受光素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5868965A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5162644A (en) * | 1988-03-14 | 1992-11-10 | Hitachi, Ltd. | Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source |
JPH02140853U (enrdf_load_stackoverflow) * | 1989-04-26 | 1990-11-26 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4800616A (en) * | 1988-05-06 | 1989-01-31 | Steamatic, Inc. | Air powered duct cleaner and crawler |
-
1981
- 1981-10-21 JP JP56167208A patent/JPS5868965A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5868965A (ja) | 1983-04-25 |
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