JPS5866332A - 荷電粒子ビ−ム装置の開口角制限装置 - Google Patents
荷電粒子ビ−ム装置の開口角制限装置Info
- Publication number
- JPS5866332A JPS5866332A JP57164146A JP16414682A JPS5866332A JP S5866332 A JPS5866332 A JP S5866332A JP 57164146 A JP57164146 A JP 57164146A JP 16414682 A JP16414682 A JP 16414682A JP S5866332 A JPS5866332 A JP S5866332A
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- particle beam
- aperture
- stencil mask
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8117846 | 1981-09-22 | ||
| FR8117846A FR2513425A1 (fr) | 1981-09-22 | 1981-09-22 | Dispositif de limitation angulaire dans un systeme a faisceau de particules chargees |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5866332A true JPS5866332A (ja) | 1983-04-20 |
Family
ID=9262358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57164146A Pending JPS5866332A (ja) | 1981-09-22 | 1982-09-22 | 荷電粒子ビ−ム装置の開口角制限装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4492870A (show.php) |
| EP (1) | EP0075504B1 (show.php) |
| JP (1) | JPS5866332A (show.php) |
| DE (1) | DE3268835D1 (show.php) |
| FR (1) | FR2513425A1 (show.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2597259A1 (fr) * | 1986-04-15 | 1987-10-16 | Thomson Csf | Dispositif a faisceau electronique pour projeter l'image d'un objet sur un echantillon |
| JP2591548B2 (ja) * | 1991-07-26 | 1997-03-19 | 富士通株式会社 | 荷電粒子線露光装置及び荷電粒子線露光方法 |
| FR2837931B1 (fr) * | 2002-03-29 | 2004-12-10 | Cameca | Dispositif de mesure de l'emission de rayons x produite par un objet soumis a un faisceau d'electrons |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2351497A1 (fr) * | 1976-05-14 | 1977-12-09 | Thomson Csf | Dispositif permettant le trace programme de figures de formes differentes |
| GB1544222A (en) * | 1976-07-02 | 1979-04-19 | Zeiss Jena Veb Carl | Method of and apparatus for non-thermal electron beam processing of workpieces |
| GB1605087A (en) * | 1977-05-31 | 1981-12-16 | Rikagaku Kenkyusho | Method for shaping a beam of electrically charged particles |
| US4218621A (en) * | 1977-06-15 | 1980-08-19 | Vlsi Technology Research Association | Electron beam exposure apparatus |
| US4199689A (en) * | 1977-12-21 | 1980-04-22 | Tokyo Shibaura Denki Kabushiki Kaisha | Electron beam exposing method and electron beam apparatus |
| US4243866A (en) * | 1979-01-11 | 1981-01-06 | International Business Machines Corporation | Method and apparatus for forming a variable size electron beam |
| US4210806A (en) * | 1979-01-18 | 1980-07-01 | International Business Machines Corporation | High brightness electron probe beam and method |
| US4282437A (en) * | 1979-12-17 | 1981-08-04 | Bell Telephone Laboratories, Incorporated | Charged particle beam lithography |
-
1981
- 1981-09-22 FR FR8117846A patent/FR2513425A1/fr active Granted
-
1982
- 1982-08-31 US US06/413,524 patent/US4492870A/en not_active Expired - Fee Related
- 1982-09-07 EP EP82401634A patent/EP0075504B1/fr not_active Expired
- 1982-09-07 DE DE8282401634T patent/DE3268835D1/de not_active Expired
- 1982-09-22 JP JP57164146A patent/JPS5866332A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4492870A (en) | 1985-01-08 |
| FR2513425A1 (fr) | 1983-03-25 |
| EP0075504B1 (fr) | 1986-01-29 |
| DE3268835D1 (en) | 1986-03-13 |
| EP0075504A1 (fr) | 1983-03-30 |
| FR2513425B1 (show.php) | 1983-12-02 |
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