JPS586568A - Memory device - Google Patents

Memory device

Info

Publication number
JPS586568A
JPS586568A JP57107430A JP10743082A JPS586568A JP S586568 A JPS586568 A JP S586568A JP 57107430 A JP57107430 A JP 57107430A JP 10743082 A JP10743082 A JP 10743082A JP S586568 A JPS586568 A JP S586568A
Authority
JP
Japan
Prior art keywords
signal
decoder
ram
input
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57107430A
Other languages
Japanese (ja)
Other versions
JPS6012660B2 (en
Inventor
Yoko Takashima
高嶋 庸行
Tomio Goto
富雄 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57107430A priority Critical patent/JPS6012660B2/en
Publication of JPS586568A publication Critical patent/JPS586568A/en
Publication of JPS6012660B2 publication Critical patent/JPS6012660B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Storage Device Security (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To avoid data from being written in an RAM chip except specified write, by providing a control circuit which makes the RAM chip of a memory board non-selective and a non-selection signal to the RAM chip. CONSTITUTION:An AND gate 2 is connected to an RAM chip 4 on a memory board via a decoder 3 and an output of an inverter 1 and a data readout signal S1 are given to the input of gate 2. A voltage of +5V is applied to the input of an inverter 1 via a resistor R and grounded via a switch (SW). When the SW is at OFF state, the decoder 3 is made active independently of the state of a signal S1, and the decoder 3 inputs a chip selection signal designed with an upper-order bit address signal AB' to the RAM 4, the address information outputted from a CPU is inputted via a bus AB and a data is inputted via a bus DB is response to a write signal S2. With the SW at ON state, the decoder 3 is made inhibited and the RAM4 is inhibited either.

Description

【発明の詳細な説明】 本発明はメ4り装置m4?に読み出し書き込み可能メ毫
り素子を含むメモリ装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention is based on the mechanical cutting device m4? The present invention relates to a memory device including a readable/writable memory element.

従来読み出し書き込み可能メモリ(以下8ムMという)
ボード上に実装されたRAM素子を、プログツム開発時
にプログラム格納領域として使用しこのRAM評にプロ
グラム命令を書き込み、その後プログ2ムデバ、り等を
実行した時グログツムによ〕予め決められた処理手順と
、#!表っ九処理手順を中央演算処理装置(CPU)が
実行することがある、これは主に雑音中プレグ2ム々ス
によって書き込み信号が加わる事に起因するのであるが
ヒの雑音やプログラム命令によってプログラム格納領域
として使用しているRAMK書き込まれた正規のプログ
ラムデータまでが書き替えられてしまうという欠点があ
った。
Conventional readable and writable memory (hereinafter referred to as 8M)
The RAM element mounted on the board is used as a program storage area during program development, program commands are written in this RAM, and then when the program is executed, the predetermined processing procedure and the like are executed. , #! The central processing unit (CPU) may execute the above nine processing steps. This is mainly due to the addition of a write signal due to preprogramming in the noise, but also due to the addition of write signals due to noise or program instructions. There is a drawback that even the regular program data written in the RAMK used as a program storage area is rewritten.

本発明の目的は、RAM素子に書き込まれたプログラム
命令が雑音中プログラムミスにより誤り九プログ2ム情
報に書き替えられる仁とがないRAM装置を提供すると
とにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a RAM device in which a program instruction written in a RAM element is not easily rewritten into program information due to a program error in noise.

本発明はメモリーボード上のRAMチ、プを非選択状態
にする制御回路を設け、この制御回路から非選択信号を
RAMチップに与える仁とによ)、所定の書き込み時以
外にRAMチップにデータが書き込まれ衾いようKする
ように構成される。
The present invention provides a control circuit that unselects a RAM chip on a memory board, and provides a non-selection signal to the RAM chip from this control circuit. It is configured to be written and read.

本発明によれば、所定の期間以外IIcFi制御回路か
らの非選択信号によj)RAMへのデータの書き込みが
禁止されるので、所定の期間kRAMK書き込まれた正
規のプ四グラムが雑音やプログラムミス勢によって誤っ
た情報に書き替えられることはない。
According to the present invention, writing of data to the RAM is prohibited by the non-selection signal from the IIcFi control circuit except for a predetermined period, so that a regular program written in kRAMK for a predetermined period is not affected by noise or programming. Information will not be rewritten to incorrect information by mistakes.

以下1図面を参照して本発明をよシ詳細に説明する。The present invention will be explained in detail below with reference to one drawing.

第1図は本発明の一実施例を示すメモリ装置の一部を表
わすブロック図である。メモリーボード上のRAMチッ
プ4はデータバスDSの入出力端子k及びアドレスバス
ABの入力端子jを有し、端子息に書き込み信号8.が
入力され、端子lにデコーダ3のチップセレクト端子り
からチップセレクト信号が入力される。一方デコーダ3
にはチ、プセレクト用のアドレス信号の上位ビット人B
′(本実施例では上位2ビツト)が端子f9gに入力さ
れる。端子eにi;jANDゲート2の出力端子mから
デコーダ制御信号が入力され、ANDゲート2の入力端
子c、dは夫々インバータ1の出力端子すと、データ読
み出し信号8.に接続されインバータlの入力端子1は
抵抗Bを介して+5vの電圧が印加されるとともにスイ
ッチSWを介して接地される。
FIG. 1 is a block diagram showing a part of a memory device showing one embodiment of the present invention. The RAM chip 4 on the memory board has an input/output terminal k of a data bus DS and an input terminal j of an address bus AB, and a write signal 8. is input, and a chip select signal is input from the chip select terminal of the decoder 3 to the terminal l. On the other hand, decoder 3
The upper bit of the address signal for preselect is B.
' (in this embodiment, the upper two bits) is input to the terminal f9g. A decoder control signal is inputted to the terminal e from the output terminal m of the i; The input terminal 1 of the inverter 1 is connected to the input terminal 1 of the inverter 1, to which a voltage of +5V is applied via the resistor B and is grounded via the switch SW.

かかる構成の本実施例によれば、スイッチSWがOFF
状態の時インバータの入力端子aは抵抗Rを介して+5
vにプルアップされているので、Illレベルが入力さ
れ、インバータ1の出力端子すからはIQルベルが出力
され、この信号が2人力ANDゲート2の一方の入力端
子Cに入る。
According to this embodiment having such a configuration, when the switch SW is OFF
In this state, the input terminal a of the inverter is connected to +5 through the resistor R.
Since it is pulled up to V, the Ill level is input, the IQ level is output from the output terminal of the inverter 1, and this signal enters one input terminal C of the two-man power AND gate 2.

即ち2人力ANDゲート2の出力端子mに絋I Q ル
ベルが出力され、この信号がデコーダ3のチップセレク
ト端子eに入るので、デコーダ3は能動状態になる。一
方、2人力ANDゲート20入力端子CはスイッチSW
がOFFしている限ft@Qmレベルであるから、2人
力ANDゲート2のもう一方の入力端子dのデータ読み
出し信号SsがIQIであるか11−であるかに関係な
く常に端子mlcは・0−レベルが出力されるので、デ
コーダ3は能動状態にある。能動状態にあるデコーダ3
の入力端子f1gには、各々上位ビットアドレス信号人
B′が入力され、入力される信号のレベルの組み合せに
よシ、デコーダ3の複数出力端子の内上位アドレス信号
ムB′で指定され九lケ所のチップセレクト信号出力端
子りからe6sレベルが8λM4のチップセレクト端子
jに入力され、8λMチップ4は能動状JllKなる。
That is, the signal IQ is output to the output terminal m of the two-man power AND gate 2, and this signal enters the chip select terminal e of the decoder 3, so that the decoder 3 becomes active. On the other hand, the input terminal C of the two-man-powered AND gate 20 is connected to the switch SW.
Since it is at the ft@Qm level as long as it is OFF, the terminal mlc is always 0 regardless of whether the data read signal Ss at the other input terminal d of the two-man AND gate 2 is IQI or 11-. - level is output, so the decoder 3 is in the active state. Decoder 3 in active state
The upper bit address signal B' is inputted to each input terminal f1g of the decoder 3, and depending on the combination of the levels of the input signals, the upper bit address signal B' specified by the upper bit address signal B' of the plurality of output terminals of the decoder 3 is inputted. The e6s level is input from the chip select signal output terminals to the chip select terminal j of 8λM4, and the 8λM chip 4 becomes active JllK.

RAMアドレスλカ端子jKはCPUから出力されるア
ドレス情報がアドレス情報ムBを通して入力され、凡ム
M4の入出力制御端子1へ入力されるデータ書き込み信
号8゜のレベル状II(本am例では1o@レベルの時
)によ如几ムM4のデータ入方端子hヘデータがデータ
バス’DBを介して入力される。
The address information output from the CPU is input to the RAM address λ power terminal jK through the address information module B, and the data write signal is input to the input/output control terminal 1 of the RAM address module M4 at a level II of 8 degrees (in this example, 1o@ level), data is input to the data input terminal h of the memory M4 via the data bus DB.

一方、スイッチ8WがON状MKなるとインバータlの
入力端子aは#o@レベルになるのでインバータ出力端
子tl”l−レベルになり2人力ANDゲート20入力
端子Cに入る。この時ANDゲート20入力端子dic
データ読み出し信号8.が入力された場合、(読み出し
信号はCPUがRAM4の内容を読む動作時のみ@Oa
レベルK fk ’) bそれ以外の動作時には11−
レベルの信号であるとする。)ANDゲート出力端子m
はCPUがメモリの内部を読む動作時のみ、10ルベル
になシそれ以外の時は11留レベルの信号が出力されデ
コーダ3のチップセレクト端子eへ入力される。チップ
セレクト端子・が61ルベル時即ちデータ読み出し期間
以外ではデコーダ3は禁止状態にな夛、デコーダ出力端
子りからは11ルベルがRAM4のチ、プセレクト端子
lK入力され、’RAMメモリ4は禁止状態になる。ま
た・読み出し信号uO蕾レベルが端子dに入力されると
デコーダ3のチップセレクト端子eには一0ルベルが出
力され、デコーダ3は能動状態になシ、デコーダ出力端
子りからはアドレス信号上位ビットλB′によル指定さ
れたチ、プセレクト信号ぐ0・レベル信轟選択すべきR
AMチ、プ4に出力され、RAMメモリ4のチップセレ
クト端子i t−10°m’べ/’に−する0−t’R
AM4は能動状態となシ、アドレス信号ABで指定され
た番地に格納されているデータがデータバスDBを通し
て読み出される。RAM40入力制御端子1にはCPU
がRAM4ヘデータを−き込む時のみIQルベルが出力
され、それ以外の動作時には。
On the other hand, when the switch 8W is in the ON state MK, the input terminal a of the inverter l becomes the #o@ level, so the inverter output terminal tl'' becomes the l- level and enters the input terminal C of the two-manufactured AND gate 20.At this time, the AND gate 20 input terminal dic
Data read signal 8. is input, (the read signal is @Oa only when the CPU reads the contents of RAM4.
Level K fk') b 11- for other operations
Suppose that it is a level signal. )AND gate output terminal m
is set to 10 levels only when the CPU reads the inside of the memory, and at other times, a signal of level 11 is output and input to the chip select terminal e of the decoder 3. When the chip select terminal is 61 levels, that is, except during the data read period, the decoder 3 is in the disabled state, and 11 levels are input from the decoder output terminal to the RAM 4 chip select terminal lK, and the RAM memory 4 is in the disabled state. Become. In addition, when the read signal uO level is input to the terminal d, 10 lbel is output to the chip select terminal e of the decoder 3, the decoder 3 becomes active, and the upper bit of the address signal is output from the decoder output terminal. The level signal specified by λB' should be selected.
0-t'R is output to AM chip 4 and sent to chip select terminal i t-10°m'be/' of RAM memory 4.
AM4 is not in the active state, and the data stored at the address specified by the address signal AB is read out through the data bus DB. RAM40 input control terminal 1 has CPU
The IQ level is output only when reading data into RAM4, and during other operations.

Illレベル信号8tが入力される。この信号がIol
となりてもR,AM4のチップセレクト端子轟が一1ル
ベルである時、即ちスイッチがON状態で、かつ読み出
し信号S□が一1ルベルの時は。
Ill level signal 8t is input. This signal is Iol
However, when the chip select terminals of R and AM4 are at 11 lbs, that is, when the switch is in the ON state and the read signal S□ is 11 lbs.

RAMチップ4は禁止状11になるのでデータの書き込
みが禁止される。従ってこの時はRAMチップ4は読み
出し専用となる。
Since the RAM chip 4 becomes a prohibition letter 11, writing of data is prohibited. Therefore, at this time, the RAM chip 4 becomes read-only.

以上のようIIC%本夾施例実施ればRAMチ、プ4へ
のデータの書き込みはスイッチSWをOFF l。
As described above, if this embodiment of IIC% is implemented, data can be written to RAM chip 4 by turning off the switch SW.

ている時に限られ、スイッチをON状態にするとRAM
チップ4は読み出し専用メモリとして動作する。仁のた
め、プログラムデパック時勢に生じる雑音やプ曹グ九1
ス等による%RAMRAMチップヘ九データの書き込み
はスイッチをOFFしておくととkより防止できる。
When the switch is turned on, RAM is
Chip 4 operates as a read-only memory. For the sake of humanity, the noise and noise that arises in the program depack trend
Writing of data to the %RAM RAM chip by a device or the like can be prevented by keeping the switch OFF.

尚1本実施例において、スイッチとして手動スイッチを
使用したがプログラム制御によ如データの書き込み状態
の時のみOFF状態に&るよう表ゲート胞路であっても
よい。又1本実施例ではデコーダのチップセレクト信号
を制御することKよ!llRAMチップを禁止状態にし
たが、デコーダな介さず直接RAMチップを非選択にす
る信号を加えてやって4よい。
In this embodiment, a manual switch is used as the switch, but it may also be a front gate so that it is turned off only when data is being written under program control. Also, in this embodiment, the chip select signal of the decoder is controlled! Although the RAM chip is disabled, it is also possible to directly add a signal to deselect the RAM chip without using a decoder.

又1本発明の応用としてマイクロコンビ、−タ・システ
ムに於いてプログラム開発時のプログラムやデータの格
納領域として本発明のRAMチップ及び制御回路を使用
すれば、I#4動作によって、格納しているプログラム
が破壊され石拳がなく表るだけでなく、キー人力等でプ
ルグラム内容が簡単に変更できHFROMへの書換えの
必要奄なく能率が上る。
In addition, as an application of the present invention, if the RAM chip and control circuit of the present invention are used as a storage area for programs and data during program development in a microcomputer system, the RAM chip and control circuit of the present invention can be used as a storage area for programs and data during program development. Not only will the current program be destroyed and no stone fist will appear, but the contents of the program can be easily changed with key human power, etc., and the efficiency of rewriting to HFROM will be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例によるメモリ装置の一部を示
すプElyり図である。
FIG. 1 is a schematic diagram showing a portion of a memory device according to an embodiment of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 読み出し信号および書き込み信号によル制御されて情報
の授受を行なうメモリ装置において、制御信号を発生す
ることによシ、その発生期間紘前記書き込み信号を受け
つけないようにする手段を有することを特徴とするメモ
リ装置。
A memory device that sends and receives information under control of a read signal and a write signal, characterized by having means for generating a control signal so as not to accept the write signal during the period during which the control signal is generated. memory device.
JP57107430A 1982-06-22 1982-06-22 memory device Expired JPS6012660B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57107430A JPS6012660B2 (en) 1982-06-22 1982-06-22 memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57107430A JPS6012660B2 (en) 1982-06-22 1982-06-22 memory device

Publications (2)

Publication Number Publication Date
JPS586568A true JPS586568A (en) 1983-01-14
JPS6012660B2 JPS6012660B2 (en) 1985-04-02

Family

ID=14458939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57107430A Expired JPS6012660B2 (en) 1982-06-22 1982-06-22 memory device

Country Status (1)

Country Link
JP (1) JPS6012660B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152599A (en) * 1983-02-21 1984-08-31 Omron Tateisi Electronics Co Memory control circuit
JPS62138258U (en) * 1986-02-26 1987-08-31
JPS62266602A (en) * 1986-05-14 1987-11-19 Matsushita Electric Ind Co Ltd Setting guard device for system parameter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152599A (en) * 1983-02-21 1984-08-31 Omron Tateisi Electronics Co Memory control circuit
JPS62138258U (en) * 1986-02-26 1987-08-31
JPS62266602A (en) * 1986-05-14 1987-11-19 Matsushita Electric Ind Co Ltd Setting guard device for system parameter

Also Published As

Publication number Publication date
JPS6012660B2 (en) 1985-04-02

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