JPS59113600A - Highly reliable storage circuit device - Google Patents
Highly reliable storage circuit deviceInfo
- Publication number
- JPS59113600A JPS59113600A JP57224710A JP22471082A JPS59113600A JP S59113600 A JPS59113600 A JP S59113600A JP 57224710 A JP57224710 A JP 57224710A JP 22471082 A JP22471082 A JP 22471082A JP S59113600 A JPS59113600 A JP S59113600A
- Authority
- JP
- Japan
- Prior art keywords
- line
- selector
- storage cells
- highly reliable
- majority
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/16—Error detection or correction of the data by redundancy in hardware
- G06F11/18—Error detection or correction of the data by redundancy in hardware using passive fault-masking of the redundant circuits
- G06F11/183—Error detection or correction of the data by redundancy in hardware using passive fault-masking of the redundant circuits by voting, the voting not being performed by the redundant components
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は高信頼記憶回路装置に係り、特にデータ書込、
読出しエラーの低減又、1ビツト不良を無くし歩留シの
向上を目的とした集積回路装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a highly reliable memory circuit device, and particularly to a data writing,
The present invention relates to an integrated circuit device that aims to reduce read errors and eliminate 1-bit defects to improve yield.
従来この種の記憶装置を含む集積回路装置には、ランダ
ムアクセスメモリ、プログラマブルリードオンリーメモ
リ等がある。これらに共通なのは、第1図のようにデコ
ーダー2イン1とセレクタライン3とで選ばれる1つの
アドレスに対して1つの記憶素子2もしくは1つの記憶
回路が対応しておL 1つでも機能しないものがある
と、その記憶装置としての制置は無い。又、放射線等の
偶発的事故においても、改善はされつつあるが、ビット
不良が起る。このように、1つのアドレスに対し1つの
記憶素子もしくわ、1つの記憶回路が対応する装置は信
頼性的にも弱い面を持っている。Conventional integrated circuit devices including this type of memory device include random access memory, programmable read-only memory, and the like. What these all have in common is that, as shown in Figure 1, one memory element 2 or one memory circuit corresponds to one address selected by the decoder 2-in-1 and selector line 3. When something exists, it has no place as a storage device. In addition, bit failures occur even in the case of accidental accidents such as radiation, although improvements are being made. In this way, a device in which one memory element or one memory circuit corresponds to one address has a weak reliability.
本発明は、1アドレスに対し、複数の記憶素子もしくわ
、記憶回路を対応させ、1アドレスに対する複数の結果
を多数決回路を通すことにより上記欠点を除去し、信頼
性の向上に適合し得る集積回路を提供することにある。The present invention eliminates the above drawbacks by associating a plurality of memory elements or memory circuits with one address and passing a plurality of results for one address through a majority decision circuit, and provides an integrated system suitable for improving reliability. The purpose is to provide circuits.
本発明によると、集積回路において、1アドレスに複数
の記憶セルを対応させ、その出力を多数決回路を通すこ
とを特徴とする集積回路装置が得られる。According to the present invention, an integrated circuit device is obtained in which a plurality of memory cells are associated with one address and the output thereof is passed through a majority circuit.
次に本発明の実施例について図面を用いて説明する。第
2図は一実施例である。記憶データはデコーダーライン
5と、セレクターライン8とて選ばれる交点から決定さ
れる。ここで、デコーダーラインとセレクターラインは
、常に各々1つタケが選はれるようになっている。この
第2図によると常に3つの記憶セルが週ばれるようにな
る。この屯うに読出しの場合は、デコーダーライ15と
セレクターライン8そしてセレクタライン8で選ばれた
多数決回路10により3つの記憶セルを比較し常に多数
の のデータを決定する。書込みの場合は、上記同様に
、3つの記憶セルに同時に同じものを書き込むことにな
る。Next, embodiments of the present invention will be described using the drawings. FIG. 2 shows one embodiment. The stored data is determined from the intersection selected by the decoder line 5 and the selector line 8. Here, one decoder line and one selector line are always selected. According to FIG. 2, three memory cells are always used. In the case of reading, the decoder line 15, the selector line 8, and the majority circuit 10 selected by the selector line 8 compare the three memory cells and always determine a large number of data. In the case of writing, the same thing is written to three memory cells at the same time, as described above.
本発明は、以上のように1アドレスに複数の記憶セルを
対応させ、多数決回路を具備させることによシ、ビット
、不良を低減させ、信頼性の高い集積回路装置が得られ
る。以上は、多数決の基数は3として説明した。According to the present invention, as described above, by associating a plurality of memory cells with one address and providing a majority circuit, defects in bits, bits, and defects can be reduced, and a highly reliable integrated circuit device can be obtained. The explanation above has been made assuming that the base number for majority voting is 3.
第1図は従来の記憶装置の部分物成図、第2図は本発明
の一実施例を部分的にブロック図で示した回路図、であ
る。
なお図において、1,5・・・・・・デコーダーライン
、2.6・・・・・・記憶セル、3,8・・・・・・セ
レクターライン、4.11・・・・・・入出カライン、
7・・・・・・ビット慇1.9・・・・・・入出力制御
信号、10・・−・・多数決回路、12・・・・・・多
数決回路選択信号、13.14・・・・・・スイッチ1
5.16・・・・・・センスアンプ、である。
h l 図
名 2 図FIG. 1 is a partial physical diagram of a conventional storage device, and FIG. 2 is a circuit diagram showing a partial block diagram of an embodiment of the present invention. In the figure, 1, 5...decoder line, 2.6...memory cell, 3, 8...selector line, 4.11...input/output Karain,
7...Bit 1.9...Input/output control signal, 10...Majority circuit, 12...Majority circuit selection signal, 13.14... ...Switch 1
5.16...Sense amplifier. h l Figure name 2 Figure
Claims (1)
数の記憶セルを持ち、該記tC+セルの読出し回路に多
数決回路を具備することを特徴とする高信頼記憶回路装
k。1. A highly reliable integrated circuit device including memory cells, having a plurality of memory cells at one address, and comprising a majority circuit in a reading circuit for the tC+ cells.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57224710A JPS59113600A (en) | 1982-12-21 | 1982-12-21 | Highly reliable storage circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57224710A JPS59113600A (en) | 1982-12-21 | 1982-12-21 | Highly reliable storage circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59113600A true JPS59113600A (en) | 1984-06-30 |
Family
ID=16818027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57224710A Pending JPS59113600A (en) | 1982-12-21 | 1982-12-21 | Highly reliable storage circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59113600A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61211786A (en) * | 1985-03-16 | 1986-09-19 | Hitachi Maxell Ltd | Ic card |
WO1992004677A1 (en) * | 1990-09-12 | 1992-03-19 | Cray Research, Inc. | Fault tolerant networking architecture |
JP2006302487A (en) * | 2005-04-21 | 2006-11-02 | Hynix Semiconductor Inc | Rfid system including memory for correcting fail cell and method for correcting fail cell using the same |
-
1982
- 1982-12-21 JP JP57224710A patent/JPS59113600A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61211786A (en) * | 1985-03-16 | 1986-09-19 | Hitachi Maxell Ltd | Ic card |
WO1992004677A1 (en) * | 1990-09-12 | 1992-03-19 | Cray Research, Inc. | Fault tolerant networking architecture |
US5206952A (en) * | 1990-09-12 | 1993-04-27 | Cray Research, Inc. | Fault tolerant networking architecture |
JP2006302487A (en) * | 2005-04-21 | 2006-11-02 | Hynix Semiconductor Inc | Rfid system including memory for correcting fail cell and method for correcting fail cell using the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4051460A (en) | Apparatus for accessing an information storage device having defective memory cells | |
EP0029322A1 (en) | Semiconductor memory device with redundancy | |
KR900008637B1 (en) | Semiconductor memory device having redundancy circuit | |
KR890004319A (en) | Decrypt / Write Memory with Multiple Column Selection Modes | |
JPH04315898A (en) | Semiconductor integrated circuit | |
US20200365223A1 (en) | Systems and methods to test a memory device | |
KR940005697B1 (en) | Semiconductor memory device having redundant memory cells | |
US5386387A (en) | Semiconductor memory device including additional memory cell block having irregular memory cell arrangement | |
JPS59113600A (en) | Highly reliable storage circuit device | |
US6052767A (en) | Semiconductor device having redundant memory cell arrays and serially accessing addresses | |
JPH0785693A (en) | Semiconductor memory | |
JPH06215590A (en) | Flash erasure type nonvolatile memory | |
JPH05128895A (en) | Semiconductor device | |
JPH0263280B2 (en) | ||
JP2924451B2 (en) | Semiconductor memory device | |
JPS6233625B2 (en) | ||
JPS62145447A (en) | Storage circuit | |
JPS6089895A (en) | Semiconductor storage device | |
JP2573679B2 (en) | Semiconductor storage device | |
JPH023198A (en) | Fault detecting circuit building-in type memory element | |
JPH0746519B2 (en) | Semiconductor device | |
JPH06105555B2 (en) | RAM circuit | |
JPH05101699A (en) | Memory device | |
JPS5798197A (en) | Multiplexing memory device | |
JP2002208284A (en) | Semiconductor memory |