JPS5863938A - Photomask - Google Patents

Photomask

Info

Publication number
JPS5863938A
JPS5863938A JP56163017A JP16301781A JPS5863938A JP S5863938 A JPS5863938 A JP S5863938A JP 56163017 A JP56163017 A JP 56163017A JP 16301781 A JP16301781 A JP 16301781A JP S5863938 A JPS5863938 A JP S5863938A
Authority
JP
Japan
Prior art keywords
photomask
shape
wafer
hexagonal
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56163017A
Other languages
Japanese (ja)
Inventor
「よし」武 和樹
Kazuki Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56163017A priority Critical patent/JPS5863938A/en
Publication of JPS5863938A publication Critical patent/JPS5863938A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60Substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To produce photomasks to be used in the production of semiconductors inexpensively without waste by forming the outside shape thereof to a hexagonal or higher polygonal shape having at least a pair of parallel sides. CONSTITUTION:A photomask 4 of a hexagonal or higher polygonal shape, for example, an octagonal shape is adapted for a semiconductor wafer 3. Since there are no wasteful parts that deviate from the wafer 3 in the photomask 4, the costs of materials are reduced by about 22% as compared to conventional photomasks of a square shape. For the purpose of positioning the photomask to the mask holder of an exposure machine or to the wafer 3 in the actual manufacture, at least a pair of parallel sides are required for the photomask 4.

Description

【発明の詳細な説明】 本発明はトランジスタやダイオードや半導体集積回路素
子等を製造する際、使用するフォトマスクに関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask used when manufacturing transistors, diodes, semiconductor integrated circuit elements, and the like.

従来のフォトマスク2は、第1図に示すように、正方形
または長方形をしている。一方、+導体素子を形成する
半導体ウニノー−1は円形をしているため、@1図に示
すように、フォトマスク2の四隅の部分は実際には使用
せず無駄になっている。
A conventional photomask 2 has a square or rectangular shape, as shown in FIG. On the other hand, since the semiconductor unit 1 forming the positive conductor element has a circular shape, the four corner portions of the photomask 2 are not actually used and are wasted, as shown in Figure @1.

一方、半導体ウェハー1の直径は量産効率を高めるため
、近年増々大形化しておシ、またパターンの微細化と合
わせてマスク2の材質も均一で膨張率の少ない石英LE
ガラス等になる方向であり高価な材料となってきている
On the other hand, the diameter of the semiconductor wafer 1 has been increasing in recent years in order to increase mass production efficiency, and in conjunction with the miniaturization of patterns, the material of the mask 2 is also made of quartz LE, which is uniform and has a low expansion rate.
The trend is toward glass, etc., and it is becoming an expensive material.

本発明の目的は無駄が少なくかつ、従来の製造技術に何
ら支障のない低価格のフォトマスクを提供することにあ
る。
An object of the present invention is to provide a low-cost photomask with little waste and no problems with conventional manufacturing techniques.

本発明によれば、六角形以上の多阿形で、少なくともl
りの平行して対向する2辺を有するフォトマスクを得る
According to the present invention, the polygonal shape is hexagonal or more, and at least l
A photomask having two parallel opposing sides is obtained.

次に図面を用いて本発明をよシ祥細に説明する。Next, the present invention will be explained in detail using the drawings.

@2図は、本発明の一実施例を説明する図であ)%六角
形のフォトマスク4を半導体ウェハー3に適用した場合
を示している。第1図との比較でもわかるように、フォ
トマスク4には角の無駄な部分すなわち、半導体ウェハ
ー3からはずれる部分がないため、約22%の材料費の
原価低減となる。この時、実際の製造に当〕、露光機の
マスクホールダとの位置合せや半導体ウェハー3との位
置合せのため、フォトマスク4には少なくとも1対の平
行な辺が必要となる。
Figure 2 is a diagram illustrating an embodiment of the present invention.) It shows a case where a hexagonal photomask 4 is applied to a semiconductor wafer 3. As can be seen from a comparison with FIG. 1, the photomask 4 has no wasted corner parts, that is, parts that come off the semiconductor wafer 3, resulting in a material cost reduction of about 22%. At this time, in actual manufacturing, the photomask 4 needs at least one pair of parallel sides for alignment with the mask holder of the exposure machine and alignment with the semiconductor wafer 3.

以上の説明では、八角形の場合を例としたが。In the above explanation, an octagonal shape was used as an example.

六角形あるいはその他の六角形以上の多角形の場合も同
様であることは言うまでもない。
Needless to say, the same applies to hexagons and other polygons larger than hexagons.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のフォトマスクと半導体ウェハーとの関係
を示した図である。 第2図は本発明の一実施例である八角形のフォトマスク
と半導体ウェハーとの関係を示した図である。 1.3・・・・・・半導体ウェハー、2・・・・・・従
来のフォトマスク、4・・・・・・本発明の一実施例で
ある八角形のフォトマスク。 笑 l 図 篤 Z 図
FIG. 1 is a diagram showing the relationship between a conventional photomask and a semiconductor wafer. FIG. 2 is a diagram showing the relationship between an octagonal photomask and a semiconductor wafer, which is an embodiment of the present invention. 1.3... Semiconductor wafer, 2... Conventional photomask, 4... Octagonal photomask which is an embodiment of the present invention. Lol l Zu Atsushi Z diagram

Claims (1)

【特許請求の範囲】[Claims] 半導体装置を製造する時に使用するフォトマスクにおい
て、外形が六角形以上の多角形でかつ、少なくとも1対
の平行な辺があることを特徴とするフォトマスク。
A photomask for use in manufacturing semiconductor devices, the photomask having an outer shape of a hexagon or more polygon and having at least one pair of parallel sides.
JP56163017A 1981-10-13 1981-10-13 Photomask Pending JPS5863938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56163017A JPS5863938A (en) 1981-10-13 1981-10-13 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56163017A JPS5863938A (en) 1981-10-13 1981-10-13 Photomask

Publications (1)

Publication Number Publication Date
JPS5863938A true JPS5863938A (en) 1983-04-16

Family

ID=15765604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56163017A Pending JPS5863938A (en) 1981-10-13 1981-10-13 Photomask

Country Status (1)

Country Link
JP (1) JPS5863938A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018520386A (en) * 2015-07-15 2018-07-26 シャンハイ マイクロ エレクトロニクス イクイプメント(グループ)カンパニー リミティド Exposure apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018520386A (en) * 2015-07-15 2018-07-26 シャンハイ マイクロ エレクトロニクス イクイプメント(グループ)カンパニー リミティド Exposure apparatus and method

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