JPS641233A - Manufacture of semiconductor device and mask used in the same - Google Patents
Manufacture of semiconductor device and mask used in the sameInfo
- Publication number
- JPS641233A JPS641233A JP62155450A JP15545087A JPS641233A JP S641233 A JPS641233 A JP S641233A JP 62155450 A JP62155450 A JP 62155450A JP 15545087 A JP15545087 A JP 15545087A JP S641233 A JPS641233 A JP S641233A
- Authority
- JP
- Japan
- Prior art keywords
- rectangular
- light transmitting
- pattern
- framelike
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form a desired groove width even on a bent pattern by forming an auxiliary light transmitting region on a rectangular framelike strip-shaped bent light transmission section of a mask when the resist of a wafer main face is under-exposed to form a trench by the mask with a light transmitting region basically formed with a rectangular framelike pattern.
CONSTITUTION: A mask 1 is so formed at the striplike bent light transmitting section 18 of a rectangular framelike pattern 4 that the 4 corners of a rectangular well shielding region 2a surrounded by a striplike light transmitting section 3 are so lacked as to trim at 45° and the triangular cutouts form auxiliary light transmitting regions 19. Accordingly, in order to form a fine pattern, even if a resist is photosensed by underexposing, the resist 15 is punched in a rectangular frame shape, and the corners of the rectangular frame are formed in a shape bent perpendicular at the groove having a predetermined width (b). The trench 6 is so formed as to coincide with the fine rectangular framelike photosensitive pattern 30. Thus, the groove having a desired isolation breakdown strength can be formed.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-155450A JPH011233A (en) | 1987-06-24 | Method for manufacturing semiconductor devices and masks used in the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-155450A JPH011233A (en) | 1987-06-24 | Method for manufacturing semiconductor devices and masks used in the method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS641233A true JPS641233A (en) | 1989-01-05 |
| JPH011233A JPH011233A (en) | 1989-01-05 |
Family
ID=
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204471B1 (en) | 1998-02-13 | 2001-03-20 | Nec Corporation | Parts soldering apparatus and method |
| US6794118B2 (en) * | 1990-03-20 | 2004-09-21 | Renesas Technology Corp. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| CN108346711A (en) * | 2018-02-08 | 2018-07-31 | 重庆邮电大学 | Improved vertical structure photodetector and manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6794118B2 (en) * | 1990-03-20 | 2004-09-21 | Renesas Technology Corp. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US6204471B1 (en) | 1998-02-13 | 2001-03-20 | Nec Corporation | Parts soldering apparatus and method |
| CN108346711A (en) * | 2018-02-08 | 2018-07-31 | 重庆邮电大学 | Improved vertical structure photodetector and manufacturing method |
| CN108346711B (en) * | 2018-02-08 | 2019-11-19 | 重庆邮电大学 | The manufacturing method of improved vertical structure photodetector |
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