JPS5863170A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5863170A
JPS5863170A JP56161996A JP16199681A JPS5863170A JP S5863170 A JPS5863170 A JP S5863170A JP 56161996 A JP56161996 A JP 56161996A JP 16199681 A JP16199681 A JP 16199681A JP S5863170 A JPS5863170 A JP S5863170A
Authority
JP
Japan
Prior art keywords
gate electrode
film
oxygen
ions
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56161996A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0140507B2 (cs
Inventor
Shinichi Ofuji
大藤　晋一
Chisato Hashimoto
橋本　千里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56161996A priority Critical patent/JPS5863170A/ja
Publication of JPS5863170A publication Critical patent/JPS5863170A/ja
Publication of JPH0140507B2 publication Critical patent/JPH0140507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56161996A 1981-10-13 1981-10-13 半導体装置の製造方法 Granted JPS5863170A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56161996A JPS5863170A (ja) 1981-10-13 1981-10-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56161996A JPS5863170A (ja) 1981-10-13 1981-10-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5863170A true JPS5863170A (ja) 1983-04-14
JPH0140507B2 JPH0140507B2 (cs) 1989-08-29

Family

ID=15746049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56161996A Granted JPS5863170A (ja) 1981-10-13 1981-10-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5863170A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922322A (ja) * 1982-07-28 1984-02-04 Hitachi Ltd 半導体装置とその製造方法
JPS6072229A (ja) * 1983-09-28 1985-04-24 Hitachi Ltd 半導体装置の電極・配線構造体
JPH0252437A (ja) * 1988-08-16 1990-02-22 Sony Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922322A (ja) * 1982-07-28 1984-02-04 Hitachi Ltd 半導体装置とその製造方法
JPS6072229A (ja) * 1983-09-28 1985-04-24 Hitachi Ltd 半導体装置の電極・配線構造体
JPH0252437A (ja) * 1988-08-16 1990-02-22 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0140507B2 (cs) 1989-08-29

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