JPS5858761A - Semiconductor device - Google Patents

Abstract

PURPOSE:To equalize emitter currents, and to improve a high-frequency characteristic by alternately arranging region sections, which contain one or two emitters divided and bases with base contact windows at both sides of the emitters, and collector contact windows in a large number. CONSTITUTION:An N<+> buried layer 7 is formed to a high-resistivity P<-> substrate 6, and a collector layer 8 is shaped onto the layer 7. A plurality of the base regions 9 using the two emitters 1 divided with the base contact windows 2 at both sides as units are formed to the collector layer 8. Collector extracting regions 12 are shaped at both sides of the regions 9, and an electrode 11 is formed to the regions 12 through the collector contact windows 5. Accordingly, base resistance is reduced while realizing a large emitter area by a plurality of the emitters 1, distances up to the windows 5 are equalized by the emitters 1 divided, collector resistance is made uiform, and equal currents are flowed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates in particular to the structure of bipolar transistors forming monolithic integrated circuits.

Bipolar transistors used in the power stages of high-frequency monolithic integrated circuits are designed with a large construction area to allow a large collector current to flow, but in this case, the base resistance increases and the high-frequency characteristics deteriorate. Therefore, conventionally, as shown in FIG. , both sides of each entreta 1 p
Base contact window 2t - base electrode 41ft:
I was trying to reduce the base resistance by connecting it.

In addition, since the collector needs to be connected to the surface of the element through the lead electrode, it is connected to the collector lead electrode 10 through the buried layer 7 and the collector contact window 5 as shown in FIG. 3 is an emitter electrode, and 6 is a P-substrate.

However, in this case, the distances to the collector outer window 5 are different between the divided power vines 20, and the collector resistances are different. It is difficult to obtain accurate high frequency characteristics.

The present invention aims to improve the above-mentioned drawbacks and provide a semiconductor device having a transistor with good high frequency characteristics.

The semiconductor device according to the present invention is one in which a large number of region portions including one or two divided vines and a base having base contact windows on both sides thereof and collector contact windows are arranged alternately, With this structure, the base resistance can be reduced (and the distances from the divided entrants to the collector contact windows can be made equal, so that the respective emitter currents can be made uniform, and good high frequency characteristics can be obtained).

Hereinafter, embodiments of the present invention will be explained in more detail with reference to the drawings, taking an NPN type transistor as an example.

One embodiment of the present invention is shown in Fig. 2a, and the person-N cross section is shown in Fig. 2a.
As shown in the figure, an N+ buried layer 7t- is formed on a high specific resistance P'' substrate 6 as in the conventional case, and an N type collector layer 8 is formed thereon. Base contacts are formed on both sides of this collector layer 8. A divided emitter 1t having a window 2 is formed by a plurality of base regions 9t by ion implantation or thermal diffusion as in the conventional method.On both sides of the base region 9 are collector lead-out regions 12t. The collector lead electrode 11 is entirely formed thereon via the collector contact window 5.

As shown in FIG. 2C, which is a B-ff cross section of FIG. Avoid.

By configuring a transistor with the structure shown in Figure K2 a, b, and C, it is possible to realize a large emitter area for multiple emitters 1 while reducing the base resistance. Collector contact window 5t
It is possible to make the collector resistance uniform by making the distance between the two transistors equal, and it is possible to flow an equal emitter current to the two transistors, making it possible to create a Tapaibo 2 transistor with gentle high-frequency characteristics even when used with a large collector current. becomes.

In addition, a stabilizing resistance layer 10t- as shown in FIG.
When not in use, the multi-layer wiring of the electrodes can avoid crossing of the collector lead-out electrodes and the generator lead-out electrodes.

Here, we will explain the NPN type transistor, and 2 is the P
It goes without saying that the present invention can be similarly implemented with respect to NP type transistors, and the number of entrants 1 may be one.

[Brief explanation of the drawing]

FIGS. 1A and 1B are a plan view and a cross-sectional view taken along the line-N of a conventional transistor, respectively. Figure 2a. B and C are a plan view, an AN sectional view, and a BN sectional view, respectively, of a transistor showing one embodiment of the present invention. l...Engine ζ ivy, 2...Base contact window, 3...Emitter extraction electrode, 4...
... Base extraction electrode, 5 ... Collector contact window, 6 ... P-substrate, 7 ...
...N+ collector buried layer, 8...N type collector layer, 9...base region, 10...
Ivy stabilizing resistance layer, 11...Collector extraction electrode, 12...Collector extraction region. Engineering〉

Claims (1)

[Claims] The bipolar transistor has a plurality of divided entrants, a base region is also divided according to one or two of them, and a plurality of base regions and collector contact windows are mutually arranged. Characteristic semiconductor devices.