JPS5857901B2 - 結晶成長方法 - Google Patents
結晶成長方法Info
- Publication number
- JPS5857901B2 JPS5857901B2 JP49011012A JP1101274A JPS5857901B2 JP S5857901 B2 JPS5857901 B2 JP S5857901B2 JP 49011012 A JP49011012 A JP 49011012A JP 1101274 A JP1101274 A JP 1101274A JP S5857901 B2 JPS5857901 B2 JP S5857901B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- substrate
- growth
- slider
- microcrystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49011012A JPS5857901B2 (ja) | 1974-01-28 | 1974-01-28 | 結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49011012A JPS5857901B2 (ja) | 1974-01-28 | 1974-01-28 | 結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50105374A JPS50105374A (da) | 1975-08-20 |
JPS5857901B2 true JPS5857901B2 (ja) | 1983-12-22 |
Family
ID=11766194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49011012A Expired JPS5857901B2 (ja) | 1974-01-28 | 1974-01-28 | 結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5857901B2 (da) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5252570A (en) * | 1975-10-27 | 1977-04-27 | Hitachi Ltd | Device for production of compound semiconductor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4866370A (da) * | 1971-12-14 | 1973-09-11 | ||
JPS4877666A (da) * | 1972-01-20 | 1973-10-18 |
-
1974
- 1974-01-28 JP JP49011012A patent/JPS5857901B2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4866370A (da) * | 1971-12-14 | 1973-09-11 | ||
JPS4877666A (da) * | 1972-01-20 | 1973-10-18 |
Also Published As
Publication number | Publication date |
---|---|
JPS50105374A (da) | 1975-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR900007901B1 (ko) | 단결정박막의 제조방법 | |
Wagner et al. | Mechanism of branching and kinking during VLS crystal growth | |
US4022652A (en) | Method of growing multiple monocrystalline layers | |
JP4465481B2 (ja) | 単結晶材製造方法、シード基板、ダイおよび単結晶材製造装置 | |
JPS6345198A (ja) | 多元系結晶の製造方法 | |
JPS5857901B2 (ja) | 結晶成長方法 | |
US3981764A (en) | III-V Compound semi-conductor crystal growth from a liquid phase on a substract including filtering liquid phase | |
JPH0952797A (ja) | 炭化ケイ素薄膜および炭化ケイ素薄膜積層基板の製造方法 | |
JP2007320814A (ja) | バルク結晶の成長方法 | |
JP3152322B2 (ja) | 無双晶(Nd,La)GaO3単結晶およびその製造方法 | |
JP3060486B2 (ja) | Soi基板の形成方法 | |
JPH0782087A (ja) | 酸化物単結晶の製造方法 | |
JP2781857B2 (ja) | 単結晶の製造方法 | |
JP2679708B2 (ja) | 有機膜の作製方法 | |
JPH0427116A (ja) | 半導体異種接合を形成する方法 | |
JPH0316988A (ja) | 化合物半導体単結晶製造装置 | |
JPH0543400A (ja) | GaAs単結晶の製造方法 | |
JPH0341432B2 (da) | ||
JP2508726B2 (ja) | 液相エピタキシャル成長方法 | |
JPS6229394B2 (da) | ||
JP3651855B2 (ja) | CdTe結晶の製造方法 | |
JP2885452B2 (ja) | ▲iii▼―▲v▼族化合物結晶のボート成長方法 | |
JPH04324927A (ja) | 化合物半導体結晶の製造方法 | |
JPH1059793A (ja) | 大結晶粒薄膜の製造方法 | |
JPH01119600A (ja) | 3−v族化合物半導体単結晶の製造方法 |