JPS5857871A - Solid-state image pickup device - Google Patents

Solid-state image pickup device

Info

Publication number
JPS5857871A
JPS5857871A JP56156286A JP15628681A JPS5857871A JP S5857871 A JPS5857871 A JP S5857871A JP 56156286 A JP56156286 A JP 56156286A JP 15628681 A JP15628681 A JP 15628681A JP S5857871 A JPS5857871 A JP S5857871A
Authority
JP
Japan
Prior art keywords
solid
state image
image pickup
transparent
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56156286A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Tsujita
辻田 嘉之
Masahiko Kadowaki
正彦 門脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56156286A priority Critical patent/JPS5857871A/en
Publication of JPS5857871A publication Critical patent/JPS5857871A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To obtain a solid-state image pickup device with long life, high reliability and low cost, by die-bonding a solid-state image pickup element to a base plate in advance, and filling in a transparent substance to a hollow part after wire-bonding. CONSTITUTION:After an uncured epoxy system adhesives 10 is coated on the circumference of a base plate 1 in window frame shape, a transparent uncured silicone gel 11 is filled in a hollow part of the base plate. A glass-made transparent flat plate 4 is sticked to the base plate 1, the plates are heated at 150 deg.C for 150min with closely pressing to thermally cure the silicone gel 11 and the adhesives 10. Thus, a solid-state image pickup device of packaging construction with long life and high reliability can be obtained.

Description

【発明の詳細な説明】 本発−は固体撮像装置O改良に係わり、特に同体撮1m
素子を保−するための高信頼性てかつ低価格のパッケー
ジング構造に関する%Oである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the improvement of a solid-state imaging device O, and in particular to solid-state imaging of 1m.
%O for a highly reliable and low cost packaging structure to protect the device.

一般KCCD−?M08等の局体蜂像素子ね、そのIP
#性管土管十分揮しかつ信頼性掘保のためKは外界′I
II!l気から遮断して保額することが必要である。
General KCCD-? Local bee image element such as M08, its IP
#K is the outside world for sufficient excavation and reliable excavation and maintenance of earthen pipes.
II! It is necessary to protect yourself and protect yourself from the elements.

又、固体撮像素子は外部からの元情報を検知するもので
あるから、元情報が素子の受光111に正確に送られな
ければならない。
Furthermore, since the solid-state image sensor detects original information from the outside, the original information must be accurately sent to the light receiver 111 of the element.

このような条件を満1&させるためのパッケージング方
法を用いた一体撮像装置は、従来111図又は第2図の
よ5に構賊嘔れている。Millにおいて、1Fiセラ
ミツク等て成形された基板、2は固体撮像素子、3は素
子と外部回路とt電気的に結合する導電性リード、4は
固体撮像素子2の受光面に元情報を伝えるための透明平
板で一般にはガラス板が用いられる。基[1と透明平1
4とて囲まれて成る中空ii1分内には、固体撮像素子
2、固体撮像素子2上の電極5および固体撮像素子2と
導電性リード3とを接続するボンディングワイヤ6の酸
化防止や水分等による腐食防止O目的で、一般に電素ガ
ス等の不活性ガスが充t14ちれている。
An integrated imaging device using a packaging method that satisfies these conditions has conventionally been developed as shown in FIG. 111 or FIG. 2. In Mill, a substrate molded from 1Fi ceramic or the like, 2 is a solid-state image sensor, 3 is a conductive lead that electrically couples the element to an external circuit, and 4 is for transmitting original information to the light-receiving surface of the solid-state image sensor 2. A glass plate is generally used as a transparent flat plate. base [1 and transparent flat 1
In the hollow ii1 minute surrounded by the solid-state imaging device 2, the solid-state imaging device 2, the electrode 5 on the solid-state imaging device 2, and the bonding wire 6 connecting the solid-state imaging device 2 and the conductive lead 3 are protected against oxidation, moisture, etc. In order to prevent corrosion due to oxidation, it is generally filled with an inert gas such as an electric gas.

一方、固体撮像素子2は一般に200〜250℃以上の
高温に加熱されると破壊されるため、基板と透明平板と
1低融点ガラスでに接シールすることがで自ない。この
ため、予め金属リング11基板1および透鴫平114に
個々に低融点ガラス8で接着し”IP暑、基111に固
体mug子2114 di ンゲイングし、導を性リー
ド島と固体撮像素子2との間をボンディングワイヤ6で
接続し* iiE % A ト1n aムu−81等O
軟ろう材89金属リング1関には名み、局部的に加熱し
て気密シール1行っている。
On the other hand, since the solid-state imaging device 2 is generally destroyed when heated to a high temperature of 200 to 250° C. or higher, it is not possible to seal the substrate, the transparent flat plate, and the low melting point glass together. For this purpose, the metal ring 11 is individually bonded to the substrate 1 and the transparent glass plate 114 with low-melting glass 8, and then the solid glass plate 2114 is attached to the substrate 111 in advance to connect the lead island and the solid-state image sensor 2. Connect between them with bonding wire 6*
The soft filler metal 89 metal ring 1 is heated locally to create an airtight seal.

こOよ5)&パッケージング構造の場合、気密シールの
丸め外部からの水分、各種ガスの侵入を5!盆に防止で
きるため、長寿命で高侭IIl性OE1体撮像装置t′
4@ることができる。しかし、このような装置ではシー
ル部分の構造が複雑である九めにシール作業工11か多
くて作業性が悪く、ま危金属リング、金糸ろう材の費用
が高い等O問題があル1.クツケージングコストが極め
て高いという欠点1有している。
5) & In the case of packaging structure, the airtight seal is rounded to prevent moisture and various gases from entering from the outside! It is a long-life and high-quality OE single-body imaging device because it can prevent damage.
4@Can be done. However, in such a device, there are problems such as the structure of the sealing part is complicated, the number of sealing workers is large, the workability is poor, and the cost of the dangerous metal ring and gold thread brazing material is high. One drawback is that the packaging cost is extremely high.

第2図は別の従来方式O固体撮像装置である。FIG. 2 shows another conventional type O solid-state imaging device.

こO場合には、基IIIと透明平114とt肩砿接層剤
10でシールしている。中空部分にalR1図の場合と
同様に不活性ガスが充填されている。この固体撮像sm
#i構造が簡単でシールotysiがし易く、パンケー
ジングコスFが極めて安いという長79iを有している
。しかし、有機接着剤10を通って、水分子各種ガスが
外部から内部へ侵入すJlえめ気II性か悪く、寿命及
び信Ill性が劣るという欠点を有している。%に水分
が侵入して露点に達し光場合、透明平碩のF13面に結
露して外から固体撮像原子への正確な党情@C@違が妨
げられるという致命的な障害が発生し易い。W機縁着剤
の代シにポリ塩化ビニリデン樹脂のような透ll皐の極
めて小さい有機物を用いれば、気m性は著しく改善され
るが、基板やガラスとの接着性か悪いために寮用できな
いという間111がある。
In this case, the base III, the transparent flat plate 114, and the T-layer adhesive 10 are used for sealing. The hollow part is filled with inert gas as in the case of alR1 diagram. This solid-state imaging sm
#i It has a length of 79i, with a simple structure, easy sealing, and an extremely cheap pancasing cost. However, it has disadvantages in that water molecules and various gases enter from the outside into the inside through the organic adhesive 10, resulting in poor corrosion resistance and poor service life and reliability. When moisture enters the lens and reaches the dew point, a fatal problem can easily occur where dew condenses on the transparent F13 surface and prevents accurate transmission of information from the outside to the solid-state imaging atoms. . If an organic substance with a very small transparency such as polyvinylidene chloride resin is used as a substitute for the W-edge adhesive, the air resistance can be significantly improved, but it cannot be used in dormitories because of its poor adhesion to substrates and glass. There is 111 between them.

本発明は従来のこのような欠点を解消するものであり、
その目的とするところは長寿命、高個幀性かつ低価格の
バンクージング構造t−有する固体撮像装置を提供する
ことにある。
The present invention solves these conventional drawbacks,
The objective is to provide a solid-state imaging device having a long life, high individuality, and low cost having a bankous structure.

このような目的を達成するためには、予め固体撮像装置
を基板にダイボンデインクし、さらにワイヤポジディン
グtした後の中空部分に透明の物質t−充填させるもの
である。
To achieve this purpose, the solid-state imaging device is die-bonded to the substrate in advance, and the hollow portion after wire-positing is filled with a transparent material.

この構造によれば、中辛部分は気体以外の物質で隙間な
く充填されているために外部から内部、へO水分や各種
ガスの侵入はほとんどなく、たとえ中の物質がlIk渥
しても透明平板の内11iK結露することはなく、又、
構造も単純で使用材料も低価格である。
According to this structure, the middle part is filled with substances other than gas without any gaps, so there is almost no intrusion of moisture or various gases from the outside to the inside, and even if the substance inside is spilled, it is transparent. There is no condensation of 11iK inside the flat plate, and
The structure is simple and the materials used are inexpensive.

以下本発明の1jI施例を示す。Hereinafter, 1jI examples of the present invention will be shown.

貢施例1 183図に訃いて、a11図、・謁2図と同一部分に状
に未硬化のエポキシ系接着剤10を塗布した俵、基板の
中!2部分に透明、な未硬化のシリコーンゲル11’l
注入した。己かる後に・ガラス調の透明平板JtI&板
に貼ル合せ、透明子離4と基板1とを密層するように加
圧した状態で150℃で150分加熱し、シリコーンゲ
ル11と接着剤1Gとを熱硬化させた。なお、硬化後の
シリコーンゲルは、液状の未硬化物からゲル状物質KR
化した。
Tribute example 1: Figure 183, Figure A11, and the same part as Figure 2 of Audience are coated with uncured epoxy adhesive 10 inside the bale and board! 2 parts transparent, uncured silicone gel 11'l
Injected. After self-adhesion: Laminate on glass-like transparent flat plate JtI & plate, heat at 150° C. for 150 minutes under pressure so that transparent film 4 and substrate 1 are layered tightly, and apply silicone gel 11 and adhesive 1G. and was heat-cured. In addition, the silicone gel after curing is changed from a liquid uncured product to a gel-like substance KR.
It became.

このよりにして作製した固体撮像装置0[111性試験
を行ったところ、耐湿性試験では透明平llO内mに結
露することもなく、20年以上の使用に耐えるam性を
有していることがわかった。
A solid-state imaging device manufactured in accordance with this method was subjected to a 0[111] property test, and in the moisture resistance test, no dew condensation occurred inside the transparent flat 110, and it had the property of being able to withstand use for over 20 years. I understand.

貢−例2 夷jlliF110未硬化シリコーンゲ身の代)に、透
明の未酸化シリコーンゴム(粘液状)taスし、同じ方
法で熱酸化させた。硬化後のシリコーンゴムはゴム弾性
を有する固体物質であるが、このようにして作製した固
体撮像装置についても、*麹例1と同様の儒m1st有
していることがわかった。
Example 2 Transparent unoxidized silicone rubber (viscous) was applied to JlliF110 (uncured silicone material) and thermally oxidized in the same manner. The silicone rubber after curing is a solid material with rubber elasticity, and it was found that the solid-state imaging device thus produced also had the same elasticity m1st as *Koji Example 1.

II論例3 1114wAK示t!5K、;/J)xllOall平
職4の内111611Kla所の部分に設けた封入口1
21除いて窓枠状にシール剤として未硬化のエポキシ系
接着剤10をm布した後、基111と貼シ合せて両者を
密着するように加圧し、150℃で150分閏加熱して
接着剤を熱硬化させえ。しかる後5sli!に示すよ5
に、シールしていない注入口12か630重量SOW明
なポリ塩化ビニリデンII!II幡練111tlPqs
分に完全に充填した後、凧6図に示すよ5に注入口12
に未硬化のアクリル系紫外m硬化用振層剤131児盆に
シールするように侶け、高圧水銀灯により紫外11t1
分関W@制して完全硬化させた。このようにして作製し
た固体織*1iili#i%めに耐温性が極めてよく、
2s年以上ot!用に耐える信Il性を有していること
を確認し喪。
II Theory Example 3 1114wAK shown! 5K, ;/J)
After applying uncured epoxy adhesive 10 as a sealant to the window frame shape except for 21, paste it with the base 111, pressurize the two so that they are in close contact, and bond by leap heating at 150 ° C. for 150 minutes. Heat cure the agent. After that, 5sli! It is shown in 5
To, unsealed inlet 12 or 630 weight SOW clear polyvinylidene chloride II! II Hatanren 111tlPqs
After filling the kite completely for 6 minutes, fill the inlet 12 to 5 as shown in figure 6.
The uncured acrylic ultraviolet curing agent 131 was sealed in a tray, and exposed to ultraviolet 11t1 using a high-pressure mercury lamp.
I used Bunkan W@ to completely harden it. The solid woven fabric *1iii#i% produced in this way has extremely good temperature resistance,
Over 2s years old! We have confirmed that it has the credibility to withstand its use.

以上実施例はいずれも中空11分に充填する物質とは別
の箇着削奄用いてシールしているが、中空部分に充鷹す
る物質が接着性O優れ良物質てあれば、q#に別の接着
剤を用てシールする必要はなく、一種類の物質で中空部
分への充填とシールを行うことも可能である。
In all of the above examples, sealing was performed using a different material than the material filled in the hollow space, but if the material filled in the hollow space is a material with excellent adhesive properties, it would be better to use Q#. It is not necessary to use a separate adhesive for sealing, and it is also possible to fill and seal the hollow portion with one type of substance.

このように、本発明0個体撮像装置によれば、パッケー
ジングコストを従来の気密シール方式のものCし1以下
にできるとともに、気密シール方式と同じ20年以上の
0IIlt!Itを得ることができる。
As described above, according to the zero solid imaging device of the present invention, the packaging cost can be reduced to less than 1 compared to the conventional airtight seal type, and the same packaging cost as the airtight seal type can be maintained for more than 20 years! It can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の固体撮像装置の構造を示す断面図、sz
mは別の従来の固体撮像装置の構造を示す断IiiII
1%1113図は本発明の一実施例の固体撮像装置の構
造を示す断!j8、第4wJは他の実施例の透明平極内
面への接着剤塗布状at示す平面図、一纂511は同じ
実施例のポリ塩化ビxリデシ樹脂濤液の注入状ii+を
示す断面図、編6図は同じ実施例のシールされてbなか
った注入口の部分を完全にシールした状態の断面図であ
る。 1●・●●基板、2・−●●同体撮儂素子、3・●●●
導電性リード、4●●●●透明平穢、S●●●●%極、
6e●●●ボンデイングワイヤ、10−−−一有機接着
剤、11●●●φシリコーンゲル、11a●●●●●ポ
リ塩化ビニリデン#fi浴液、12●●Φ●注入口、1
3・●●一紫外線硬化接着剤。
Figure 1 is a cross-sectional view showing the structure of a conventional solid-state imaging device, sz
m is a section III showing the structure of another conventional solid-state imaging device.
Figure 1%1113 is a cross section showing the structure of a solid-state imaging device according to an embodiment of the present invention. j8, 4th wJ is a plan view showing the state of adhesive application on the inner surface of the transparent flat electrode of another example, and one line 511 is a cross-sectional view showing the state of injection of polyvinyl chloride x ride resin solution ii+ of the same example, Figure 6 is a cross-sectional view of the same embodiment, with the part of the inlet that was not sealed completely sealed. 1●・●● board, 2・−●● same body camera element, 3・●●●
Conductive lead, 4●●●●transparent plain, S●●●●% pole,
6e ●●● Bonding wire, 10 - Organic adhesive, 11 ●●●φ silicone gel, 11a ●●●●● Polyvinylidene chloride #fi bath liquid, 12 ●●Φ● Inlet, 1
3.●●1 Ultraviolet curing adhesive.

Claims (1)

【特許請求の範囲】 1、パッケージング基極と透明平板との周辺部分をシー
ル剤にてシールして曽記基職と透明平板O間に中空部分
を構成する一体撮像装置において、前記中空部分に#i
透明な物質管充填しであることを特徴どする一体撮像装
置。 2 シール剤ね充填する物質を用いること1**とする
特許請求aSS銀1項記載O固体操曽装置。
[Scope of Claims] 1. In an integrated imaging device in which a peripheral portion of a packaging substrate and a transparent flat plate is sealed with a sealant to form a hollow portion between the packaging substrate and the transparent flat plate O, the hollow portion #i
An integrated imaging device characterized by being filled with a transparent substance tube. 2. The solid state imager according to claim 1, which uses a substance filled with a sealant.
JP56156286A 1981-10-02 1981-10-02 Solid-state image pickup device Pending JPS5857871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56156286A JPS5857871A (en) 1981-10-02 1981-10-02 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56156286A JPS5857871A (en) 1981-10-02 1981-10-02 Solid-state image pickup device

Publications (1)

Publication Number Publication Date
JPS5857871A true JPS5857871A (en) 1983-04-06

Family

ID=15624488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56156286A Pending JPS5857871A (en) 1981-10-02 1981-10-02 Solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS5857871A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6152861A (en) * 1984-08-24 1986-03-15 松下電器産業株式会社 Ultrasonic probe
JPS6190258U (en) * 1984-11-20 1986-06-12
US5888106A (en) * 1994-11-30 1999-03-30 Hitachi, Ltd. Pin contact and electric parts having the same
US7235873B2 (en) * 2001-08-01 2007-06-26 Infineon Technologies Ag Protective device for subassemblies and method for producing a protective device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478026A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Production of solid color image pickup unit
JPS551116A (en) * 1978-06-16 1980-01-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56116649A (en) * 1980-02-19 1981-09-12 Matsushita Electric Ind Co Ltd Manufacturing of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478026A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Production of solid color image pickup unit
JPS551116A (en) * 1978-06-16 1980-01-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56116649A (en) * 1980-02-19 1981-09-12 Matsushita Electric Ind Co Ltd Manufacturing of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6152861A (en) * 1984-08-24 1986-03-15 松下電器産業株式会社 Ultrasonic probe
JPH044895B2 (en) * 1984-08-24 1992-01-29
JPS6190258U (en) * 1984-11-20 1986-06-12
US5888106A (en) * 1994-11-30 1999-03-30 Hitachi, Ltd. Pin contact and electric parts having the same
US7235873B2 (en) * 2001-08-01 2007-06-26 Infineon Technologies Ag Protective device for subassemblies and method for producing a protective device

Similar Documents

Publication Publication Date Title
CN102655160B (en) Radiation detecting apparatus, scintillator panel, manufacture method and radiation detecting system
US4710797A (en) Erasable and programable read only memory devices
JP3173586B2 (en) All-mold solid-state imaging device and method of manufacturing the same
JPS5857871A (en) Solid-state image pickup device
JPH0485859A (en) Airtightly sealed package and bonding member
JP2007249014A (en) Liquid crystal display device
JP6935591B2 (en) Manufacturing method of curved surface detector and curved surface detector manufactured by this manufacturing method
JPS60136254A (en) Solid-state image pickup device and manufacture thereof
JPS58127474A (en) Silid state image pickup device
US20050167773A1 (en) Semiconductor element for solid state image sensing device and solid state image sensing device using the same
JPH02229453A (en) Semiconductor device and manufacture thereof
JPH0311757A (en) Semiconductor device and manufacture thereof
JPS5869174A (en) Solid-state image pickup device
JPH07114291B2 (en) Optical sensor element
JPS5857870A (en) Solid-state image pickup device
TWI280648B (en) Hermetic sealing of image sensor chip
JP2001308301A (en) Solid-state image sensing device and its manufacturing method
TWI273686B (en) Chip-on-glass package of image sensor
TW200539400A (en) Image sensor package with a FPC surrounding a window
TWI248665B (en) Image sensor package and method for manufacturing the same
JPS6269674A (en) Solid-state image pickup device and manufacture of the same
JPH081966B2 (en) Method of manufacturing LED display element
TWI224841B (en) Film ball grid array package structure of an image sensor
JP2890731B2 (en) Method of manufacturing semiconductor device package and bonding member
JP4288848B2 (en) Manufacturing method of optical sensor with built-in liquid crystal