JPS5857767A - レ−ザ装置 - Google Patents
レ−ザ装置Info
- Publication number
- JPS5857767A JPS5857767A JP56157243A JP15724381A JPS5857767A JP S5857767 A JPS5857767 A JP S5857767A JP 56157243 A JP56157243 A JP 56157243A JP 15724381 A JP15724381 A JP 15724381A JP S5857767 A JPS5857767 A JP S5857767A
- Authority
- JP
- Japan
- Prior art keywords
- light
- laser
- optical fiber
- light source
- fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013307 optical fiber Substances 0.000 claims abstract description 58
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 239000000835 fiber Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 230000002238 attenuated effect Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 206010041662 Splinter Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Surgical Instruments (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
- Laser Surgery Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56157243A JPS5857767A (ja) | 1981-10-01 | 1981-10-01 | レ−ザ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56157243A JPS5857767A (ja) | 1981-10-01 | 1981-10-01 | レ−ザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5857767A true JPS5857767A (ja) | 1983-04-06 |
JPS6259918B2 JPS6259918B2 (enrdf_load_stackoverflow) | 1987-12-14 |
Family
ID=15645370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56157243A Granted JPS5857767A (ja) | 1981-10-01 | 1981-10-01 | レ−ザ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5857767A (enrdf_load_stackoverflow) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61232866A (ja) * | 1985-04-05 | 1986-10-17 | 松下電器産業株式会社 | レ−ザ−照射装置 |
JPS62268550A (ja) * | 1986-05-12 | 1987-11-21 | ジ−ブイ メデイカル,インコ−ポレ−テツド | レーザ付透視用血管成形カテーテル装置 |
JPH02258185A (ja) * | 1989-03-31 | 1990-10-18 | Hoya Corp | レーザ装置 |
JP2008077003A (ja) * | 2006-09-25 | 2008-04-03 | Sony Corp | 光モジュール |
US7396742B2 (en) | 2000-09-13 | 2008-07-08 | Hamamatsu Photonics K.K. | Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object |
US7566635B2 (en) | 2002-03-12 | 2009-07-28 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
CN106862760A (zh) * | 2015-12-11 | 2017-06-20 | 中国航空工业集团公司北京航空制造工程研究所 | 一种可自动切换光路的激光传输系统 |
EP3933370A4 (en) * | 2019-02-27 | 2022-11-16 | Fujikura Ltd. | Laser device |
-
1981
- 1981-10-01 JP JP56157243A patent/JPS5857767A/ja active Granted
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61232866A (ja) * | 1985-04-05 | 1986-10-17 | 松下電器産業株式会社 | レ−ザ−照射装置 |
JPS62268550A (ja) * | 1986-05-12 | 1987-11-21 | ジ−ブイ メデイカル,インコ−ポレ−テツド | レーザ付透視用血管成形カテーテル装置 |
JPH02258185A (ja) * | 1989-03-31 | 1990-10-18 | Hoya Corp | レーザ装置 |
US8946592B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8946591B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of manufacturing a semiconductor device formed using a substrate cutting method |
US7547613B2 (en) | 2000-09-13 | 2009-06-16 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US10796959B2 (en) | 2000-09-13 | 2020-10-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7592238B2 (en) | 2000-09-13 | 2009-09-22 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7615721B2 (en) * | 2000-09-13 | 2009-11-10 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7626137B2 (en) | 2000-09-13 | 2009-12-01 | Hamamatsu Photonics K.K. | Laser cutting by forming a modified region within an object and generating fractures |
US9837315B2 (en) | 2000-09-13 | 2017-12-05 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7396742B2 (en) | 2000-09-13 | 2008-07-08 | Hamamatsu Photonics K.K. | Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object |
US8937264B2 (en) | 2000-09-13 | 2015-01-20 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US9711405B2 (en) | 2002-03-12 | 2017-07-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9553023B2 (en) | 2002-03-12 | 2017-01-24 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9142458B2 (en) | 2002-03-12 | 2015-09-22 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9287177B2 (en) | 2002-03-12 | 2016-03-15 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9543256B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9543207B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9548246B2 (en) | 2002-03-12 | 2017-01-17 | Hamamatsu Photonics K.K. | Substrate dividing method |
US11424162B2 (en) | 2002-03-12 | 2022-08-23 | Hamamatsu Photonics K.K. | Substrate dividing method |
US7566635B2 (en) | 2002-03-12 | 2009-07-28 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8889525B2 (en) | 2002-03-12 | 2014-11-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
US10068801B2 (en) | 2002-03-12 | 2018-09-04 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
JP2008077003A (ja) * | 2006-09-25 | 2008-04-03 | Sony Corp | 光モジュール |
CN106862760A (zh) * | 2015-12-11 | 2017-06-20 | 中国航空工业集团公司北京航空制造工程研究所 | 一种可自动切换光路的激光传输系统 |
EP3933370A4 (en) * | 2019-02-27 | 2022-11-16 | Fujikura Ltd. | Laser device |
Also Published As
Publication number | Publication date |
---|---|
JPS6259918B2 (enrdf_load_stackoverflow) | 1987-12-14 |
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