JPS5857729A - Electronic part - Google Patents

Electronic part

Info

Publication number
JPS5857729A
JPS5857729A JP15487481A JP15487481A JPS5857729A JP S5857729 A JPS5857729 A JP S5857729A JP 15487481 A JP15487481 A JP 15487481A JP 15487481 A JP15487481 A JP 15487481A JP S5857729 A JPS5857729 A JP S5857729A
Authority
JP
Japan
Prior art keywords
recess
electrode
projection
contacted
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15487481A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Nagata
永田　光弘
Yutaka Sato
豊 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15487481A priority Critical patent/JPS5857729A/en
Publication of JPS5857729A publication Critical patent/JPS5857729A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To reduce the cost and to suppress the move of an element, by providing recess parts on the exposed end parts of upper-lower electrodes between which elements are placed, and then fixing metallic shields here which serve as electrode lead-out parts with the projection fitted to the recess contacted thereon, when sealing semiconductor elements into the through hole of a ceramic package. CONSTITUTION:A flange 8 is fixed on the lower surface of the through hole of the ceramic package 1 with it contacted on the lower surface of the package 1 by using silver solder 12, and the metallic shield 20 which has the projection 22 on the central surface and serves as the electrode lead-out part is contacted on the flange 8, and the fringe part is fixed at a welding part 22. Next, an Al electrode 21 having the recess corresponded to the projection 22 is positioned in the through hole, and a part 2 such as a current element is mounted thereon via a foil 4 and pressed by a support 3. Thereafter, an Al electrode 15 likewise having the recess 18 is mounted on the support 3, the metallic shield plate 17 is installed with the projection 19 fitted to the recess 18, and the end part lower surface thereof is fixed on the peripheral end surface of the package 1 by using silver solder 10. Thus, the reliability is enhanced without using a non-oxygeneous steel which highly costs.

Description

【発明の詳細な説明】 リコン！Ｉｆｔ素子体を絢いた電子ｆ＋（３品に関する
０一般に、ｓｋＬ、ｓｃル等の＠Ｆ部品は、〃１図に示
すように例えばセラきツクＡの外Ｉ引器ｉｌｌ内≦＝。[Detailed description of the invention] Recon! Ift element body is used for electronic f+ (3 products) In general, @F parts such as skL and scL are as shown in Fig. 1, for example, inside the outside of the cell rack A≦=.

伺えばシリコンクエバからなる半導体素子（２）を気密
に収容して構成されている。It is constructed by airtightly housing a semiconductor element (2) made of silicon cube.

半導体素子（２：の片面には、ｍ１Ｊ・らなる亀憤（５
１が。One side of the semiconductor element (2:
1 is.

また半導体素子（２）の他の面にはモリブデンあるいは
タングステンからなる支持体（３）およびモリブデンあ
るいはアルイエりムからなるｍ（引を介して鋼からなる
電極（６）がそれぞれ当量されている〇電極（５）は、
セラミック覇外Ｓ器（１１の上面に外周端をろう付され
た＆Ｌ他支持ｊＪｌ　１７＋にろう付けされている０ 電極（６１は、セラミック褒の外１ｉｉ（ＩＩの下山に
ろう付けされた７ランジ（８１の外周端に岬僧固足され
た電極支持４（９）の内周端４二ろう付けされて支持さ
れている。Further, on the other surface of the semiconductor element (2), a support (3) made of molybdenum or tungsten and an electrode (6) made of steel via a molybdenum or aluminium (m) are provided, respectively. The electrode (5) is
The outer peripheral end is brazed to the upper surface of the ceramic outer S device (11). (The inner peripheral end 42 of the electrode support 4 (9) fixed to the outer peripheral end of the cape 81 is brazed and supported.

このよう（二Ｓに、８０Ｒの電子部品では、半導体素子
（２１％性の劣化ケ防止するために気密に保っている。In this way, 80R electronic components are kept airtight to prevent deterioration of the semiconductor element (21%).

ろう付けは、ろう付は一所に１０円墳状１＝形成された
候ろう（１０）　、　（ｌ　ｌＪ等を介挿し１ｇｌｌｌ
１図に示すように、それぞれの部品な組み立てた優、例
えば７８０〜９００Ｃの水累算−慨中６＝おいて、−ろ
うを溶融することによって行なわれる。For brazing, 10 yen mound shape 1 = formed braze (10) in one place, (l lJ etc. inserted 1glll
As shown in FIG. 1, each component is assembled in a water bath of, for example, 780 to 900 C, and melted by melting the wax.

一般にセラミック展外ｆＭ−（１１の場合ろう付ｎｍ所
には、あらかじめいわゆるメタライジング処理が施こさ
れている。In general, a so-called metallizing process is performed in advance at the brazing area in the case of ceramic fM-(11).

しかして、このような方法によりろう付けを行なうとき
には、電極（５１，（６１を構成する鋼中の酸素の存在
により、高温の水孝算鈍気Ｃｐにおいて銅が水素脆化し
気密性を損ねる。However, when brazing by such a method, the presence of oxygen in the steel constituting the electrodes (51, (61) causes hydrogen embrittlement of the copper in the high-temperature water atmosphere Cp, impairing the airtightness.

そのために電極（５）％（６）を構成する銅（＝は、無
酸素鋼又は脱酸鋼かにＮ１される。For this purpose, the electrode (5)% (6) is made up of copper (= is oxygen-free steel or deoxidized steel).

しかしながら、このような無酸素銅又は脱酸鋼は非宵に
錘価であるため、電子部品の製造コストが高くなるとい
う別の問題点が層・つた。However, since such oxygen-free copper or deoxidized steel has a low weight value, another problem arises in that the manufacturing cost of electronic components increases.

本発明はかかる事情に対処してなされたもので端部な鋼
からなる金属遮蔽体にて閉基されたセライック製外囲器
内に、ａ記金属Ｃ蔽体に導電接続されて封入されたアル
ミニウムからなる′ＩＩＬ極を介して半導体素子を収納
してなる電子部品を提供しようとするものである。The present invention has been made in response to such circumstances, and is enclosed in a Ceracic envelope closed with a metal shield made of steel at the end, electrically connected to the metal C shield described in a. The present invention aims to provide an electronic component in which a semiconductor element is housed through an 'IIL pole made of aluminum.

以下・本発明の詳細な第２図に乃マ丁−実施例（二つい
て説明−「る０ なお弗２図において第１図とり（典する部分Ｃ二は。In the following, detailed explanations of the present invention are given in Fig. 2. Examples (two examples are given).

同一符号が付されている０ １ｇ２図において、セラミック外囲器（１１の上部端面
には、セラミック外囲器（１１の上面を遮蔽する鋼−か
らなる金属遮蔽板（１７）がろう付けにより固設されて
おり、この金鵡遮蔽板（１７）と半導体素子（２）の間
には、アルミニウムからなる電極（１５）が介挿されて
いる。電極（１５）の上面には凹部（１８）が形成され
、かつ、金Ｊ！１ｉ４蔽板（１７）の下面の対応位置１
＝＃；凹部（１８）に係合する凸部（１９）が形成され
ており。In Figure 01g2 with the same reference numerals, a metal shielding plate (17) made of steel that shields the top surface of the ceramic envelope (11) is fixed by brazing to the upper end surface of the ceramic envelope (11). An electrode (15) made of aluminum is inserted between the parrot shielding plate (17) and the semiconductor element (2).A recess (18) is formed on the upper surface of the electrode (15). is formed, and the corresponding position 1 on the lower surface of the gold J!1i4 shielding plate (17)
=#; A convex portion (19) that engages with the concave portion (18) is formed.

’４１ｉ（１５）ハ、コレラ凹部（１ｇ）　ト凸＃　（
１９）　ノ保合（二より径方向への動きを規制されてい
る。'41i (15) c, cholera concavity (1g) g convex # (
19) No-retention (movement in the radial direction is restricted by the second one).

外囲器（１）の他端にはフランジ（８）がろう付けされ
。A flange (8) is brazed to the other end of the envelope (1).

かつ桐からなる金属遣蔽板（２０）が７ランジ（８）の
外周端に溶接され、外囲器内部を気密（−保っている。A metal shielding plate (20) made of paulownia wood is welded to the outer peripheral edge of the seven flange (8) to keep the inside of the envelope airtight.

金ｊ／！４ｓ蔽板（２０）の内側の面にはアルミニウム
からなる′電極（１６）が啜しており、箔（４）を介し
て半導体素子に電気的に接続されている〇 金ｍｎ蔽板（２０）の中央部には１１Ｌ極（１６）の下
面に設けられた四部（２υに係合される凸部（２２）が
形成されており１電極（１６）はこれらの凹部（２１）
と凸部（２２）との係合（二より径方向の移動が規制さ
れている０ このように構成された電子部品では、鋼からなる金属遮
蔽板（１７）および７ランジ（８）をセラミック外囲器
（１）に、それぞれ高温の水素雰囲気中においてろう付
けした後、電極（１５）、支持体（３）半導体素子（２
）、箔（４１，＠極（１６）および金属屑−一（２０）
を第２図に示すように装着し、セラミック外囲器（１）
内に例えば電素ガス等の不活性ガスを充填させた後、フ
ランジ（８）と金属遮蔽板（２ｏ）と？外周面において
溶接（２２）ｌ、て、電子部品の組立を行なう。Gold j/! An electrode (16) made of aluminum is attached to the inner surface of the 4s shielding plate (20), and the gold mn shielding plate (20) is electrically connected to the semiconductor element via the foil (4). ) is formed with a convex part (22) that engages with the four parts (2υ) provided on the lower surface of the 11L pole (16), and the 1st electrode (16) is connected to these concave parts (21).
In an electronic component configured in this manner, the metal shield plate (17) made of steel and the 7 flange (8) are made of ceramic. After brazing to the envelope (1) in a high temperature hydrogen atmosphere, the electrode (15), the support (3) and the semiconductor element (2) are attached.
), foil (41, @ pole (16) and metal scrap-1 (20)
Attach the ceramic envelope (1) as shown in Figure 2.
After filling the interior with an inert gas such as an electric gas, the flange (8) and the metal shielding plate (2o) are separated. The electronic parts are assembled by welding (22) on the outer peripheral surface.

したがって、アルミニウムから成る′電極（１５）。Therefore, the 'electrode (15) made of aluminum.

（１６，）が酸化され、電極（１５）　、　（１６）表
向に酸化被膜が形成されることはなく、電極（１５）。(16,) is oxidized, electrode (15), (16) no oxide film is formed on the surface of electrode (15).

（１６）の熱伝導性および′眠気伝導性に対する影響も
なく、特性の良い電子部品を得ることができる・そして
電極（１５）、（１６）に比較的安価なアルミニウムを
用いることができるので、゛電子部品の大巾なコストダ
ウンを図ること、倶できる。It is possible to obtain electronic components with good characteristics without affecting the thermal conductivity and drowsiness conductivity of (16), and relatively inexpensive aluminum can be used for the electrodes (15) and (16).゛It is possible to significantly reduce the cost of electronic components.

また、アル（ニウムは比較的遜い曾喝であるので、電子
部品の軽陰化を図ることができる。In addition, since Al(nium) has a relatively low strength, it is possible to make electronic components lighter in weight.

【図面の簡単な説明】[Brief explanation of drawings]

Ｎ８１図は、従来の電子部品の一実ｈ１１！例の縦断面
１゛り、弔２図゛ま本発明の「れ子部品の一火檜例を示
す縦斯闇図である。 ■・・・セラミック外囲器 ２・・・半犀体判子 ５．６．Ｎ５．１６・・・・Ｎ１極 １７．２０・・・・・金！ｇ４＠板 （７３１７）代理人　弁理士　　則近憲佑（４ほか１名
）Diagram N81 is an example of a conventional electronic component h11! Fig. 2 is a longitudinal cross-sectional view showing an example of the cypress part of the receptacle part of the present invention. 5.6.N5.16...N1 pole 17.20...Fri!g4@board (7317) Agent Patent attorney Kensuke Norichika (4 and 1 other person)

Claims (1)

【特許請求の範囲】[Claims] １、端部な鋼からなる金属遮蔽体６二で閉４されたセラ
ミック製外囲器内に、前記金ｔＳＳ蔽体に２、半導体素
子はシリコン！Ｉ流４子体である特許請求の範囲第１項
に記載の１義子部品０1. Inside a ceramic envelope closed with a metal shield 6 made of steel at the end 2, the gold TSS shield 2. The semiconductor element is silicon! The one-legacy part 0 according to claim 1, which is an I-style four-legged body.
JP15487481A 1981-10-01 1981-10-01 Electronic part Pending JPS5857729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15487481A JPS5857729A (en) 1981-10-01 1981-10-01 Electronic part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15487481A JPS5857729A (en) 1981-10-01 1981-10-01 Electronic part

Publications (1)

Publication Number Publication Date
JPS5857729A true JPS5857729A (en) 1983-04-06

Family

ID=15593814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15487481A Pending JPS5857729A (en) 1981-10-01 1981-10-01 Electronic part

Country Status (1)

Country Link
JP (1) JPS5857729A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6448028U (en) * 1987-09-19 1989-03-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6448028U (en) * 1987-09-19 1989-03-24

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