JPS5856353A - アイソレ−シヨンの形成方法 - Google Patents

アイソレ−シヨンの形成方法

Info

Publication number
JPS5856353A
JPS5856353A JP56154608A JP15460881A JPS5856353A JP S5856353 A JPS5856353 A JP S5856353A JP 56154608 A JP56154608 A JP 56154608A JP 15460881 A JP15460881 A JP 15460881A JP S5856353 A JPS5856353 A JP S5856353A
Authority
JP
Japan
Prior art keywords
photo
resist film
groove
film
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56154608A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0358179B2 (cg-RX-API-DMAC7.html
Inventor
Junji Sakurai
桜井　「あ」治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56154608A priority Critical patent/JPS5856353A/ja
Publication of JPS5856353A publication Critical patent/JPS5856353A/ja
Publication of JPH0358179B2 publication Critical patent/JPH0358179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP56154608A 1981-09-29 1981-09-29 アイソレ−シヨンの形成方法 Granted JPS5856353A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56154608A JPS5856353A (ja) 1981-09-29 1981-09-29 アイソレ−シヨンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56154608A JPS5856353A (ja) 1981-09-29 1981-09-29 アイソレ−シヨンの形成方法

Publications (2)

Publication Number Publication Date
JPS5856353A true JPS5856353A (ja) 1983-04-04
JPH0358179B2 JPH0358179B2 (cg-RX-API-DMAC7.html) 1991-09-04

Family

ID=15587895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56154608A Granted JPS5856353A (ja) 1981-09-29 1981-09-29 アイソレ−シヨンの形成方法

Country Status (1)

Country Link
JP (1) JPS5856353A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192706A (en) * 1990-08-30 1993-03-09 Texas Instruments Incorporated Method for semiconductor isolation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108773A (en) * 1977-03-04 1978-09-21 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108773A (en) * 1977-03-04 1978-09-21 Matsushita Electric Ind Co Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192706A (en) * 1990-08-30 1993-03-09 Texas Instruments Incorporated Method for semiconductor isolation

Also Published As

Publication number Publication date
JPH0358179B2 (cg-RX-API-DMAC7.html) 1991-09-04

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