JPS5853833A - プラズマエツチング装置 - Google Patents

プラズマエツチング装置

Info

Publication number
JPS5853833A
JPS5853833A JP15139581A JP15139581A JPS5853833A JP S5853833 A JPS5853833 A JP S5853833A JP 15139581 A JP15139581 A JP 15139581A JP 15139581 A JP15139581 A JP 15139581A JP S5853833 A JPS5853833 A JP S5853833A
Authority
JP
Japan
Prior art keywords
anode
etched
cathode
electrode
pressure reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15139581A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0429221B2 (cg-RX-API-DMAC7.html
Inventor
Haruo Okano
晴雄 岡野
Takashi Yamazaki
隆 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15139581A priority Critical patent/JPS5853833A/ja
Publication of JPS5853833A publication Critical patent/JPS5853833A/ja
Publication of JPH0429221B2 publication Critical patent/JPH0429221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP15139581A 1981-09-26 1981-09-26 プラズマエツチング装置 Granted JPS5853833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15139581A JPS5853833A (ja) 1981-09-26 1981-09-26 プラズマエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15139581A JPS5853833A (ja) 1981-09-26 1981-09-26 プラズマエツチング装置

Publications (2)

Publication Number Publication Date
JPS5853833A true JPS5853833A (ja) 1983-03-30
JPH0429221B2 JPH0429221B2 (cg-RX-API-DMAC7.html) 1992-05-18

Family

ID=15517641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15139581A Granted JPS5853833A (ja) 1981-09-26 1981-09-26 プラズマエツチング装置

Country Status (1)

Country Link
JP (1) JPS5853833A (cg-RX-API-DMAC7.html)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140723A (ja) * 1983-12-28 1985-07-25 Oki Electric Ind Co Ltd ドライエッチング方法
JPS60186411A (ja) * 1984-03-06 1985-09-21 Anelva Corp ドライエツチング方法
JPS61171135A (ja) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp プラズマエッチング装置の制御方法
JPS63277751A (ja) * 1987-05-11 1988-11-15 Rikagaku Kenkyusho 低ガス放出壁面を有する真空容器
JPS6415930A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Plasma processing device
US5656334A (en) * 1995-10-05 1997-08-12 Anelva Corporation Plasma treating method
US5690050A (en) * 1995-05-10 1997-11-25 Anelva Corporation Plasma treating apparatus and plasma treating method
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5767173A (en) * 1980-10-09 1982-04-23 Mitsubishi Electric Corp Plasma etching device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5767173A (en) * 1980-10-09 1982-04-23 Mitsubishi Electric Corp Plasma etching device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140723A (ja) * 1983-12-28 1985-07-25 Oki Electric Ind Co Ltd ドライエッチング方法
JPS60186411A (ja) * 1984-03-06 1985-09-21 Anelva Corp ドライエツチング方法
JPS61171135A (ja) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp プラズマエッチング装置の制御方法
JPS63277751A (ja) * 1987-05-11 1988-11-15 Rikagaku Kenkyusho 低ガス放出壁面を有する真空容器
JPS6415930A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Plasma processing device
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US6015760A (en) * 1992-06-15 2000-01-18 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US6287978B1 (en) 1992-06-15 2001-09-11 Micron Technology, Inc. Method of etching a substrate
US5690050A (en) * 1995-05-10 1997-11-25 Anelva Corporation Plasma treating apparatus and plasma treating method
US5656334A (en) * 1995-10-05 1997-08-12 Anelva Corporation Plasma treating method

Also Published As

Publication number Publication date
JPH0429221B2 (cg-RX-API-DMAC7.html) 1992-05-18

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