JPS5853826A - 液相エピタキシヤル成長方法 - Google Patents

液相エピタキシヤル成長方法

Info

Publication number
JPS5853826A
JPS5853826A JP56152763A JP15276381A JPS5853826A JP S5853826 A JPS5853826 A JP S5853826A JP 56152763 A JP56152763 A JP 56152763A JP 15276381 A JP15276381 A JP 15276381A JP S5853826 A JPS5853826 A JP S5853826A
Authority
JP
Japan
Prior art keywords
substrate
epitaxial
gradient
temperature side
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56152763A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626338B2 (OSRAM
Inventor
Nagataka Ishiguro
永孝 石黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56152763A priority Critical patent/JPS5853826A/ja
Publication of JPS5853826A publication Critical patent/JPS5853826A/ja
Publication of JPS626338B2 publication Critical patent/JPS626338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2911—
    • H10P14/263—
    • H10P14/265—
    • H10P14/3421—

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP56152763A 1981-09-25 1981-09-25 液相エピタキシヤル成長方法 Granted JPS5853826A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56152763A JPS5853826A (ja) 1981-09-25 1981-09-25 液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56152763A JPS5853826A (ja) 1981-09-25 1981-09-25 液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS5853826A true JPS5853826A (ja) 1983-03-30
JPS626338B2 JPS626338B2 (OSRAM) 1987-02-10

Family

ID=15547610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56152763A Granted JPS5853826A (ja) 1981-09-25 1981-09-25 液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS5853826A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166186A (ja) * 1985-01-18 1986-07-26 Oki Electric Ind Co Ltd 半導体光素子
JPS61264767A (ja) * 1985-05-20 1986-11-22 Oki Electric Ind Co Ltd 発光素子
JPH02264571A (ja) * 1989-04-04 1990-10-29 Sharp Corp 映像信号処理回路
JPH03162084A (ja) * 1989-11-08 1991-07-12 Samsung Electron Co Ltd 高品位テレビジョン受像機の動検出装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166186A (ja) * 1985-01-18 1986-07-26 Oki Electric Ind Co Ltd 半導体光素子
JPS61264767A (ja) * 1985-05-20 1986-11-22 Oki Electric Ind Co Ltd 発光素子
JPH02264571A (ja) * 1989-04-04 1990-10-29 Sharp Corp 映像信号処理回路
JPH03162084A (ja) * 1989-11-08 1991-07-12 Samsung Electron Co Ltd 高品位テレビジョン受像機の動検出装置

Also Published As

Publication number Publication date
JPS626338B2 (OSRAM) 1987-02-10

Similar Documents

Publication Publication Date Title
US3960618A (en) Epitaxial growth process for compound semiconductor crystals in liquid phase
US4032370A (en) Method of forming an epitaxial layer on a crystalline substrate
JPS5853826A (ja) 液相エピタキシヤル成長方法
US5223079A (en) Forming thin liquid phase epitaxial layers
JPS6060714A (ja) Ｉ−ｖ族化合物半導体の気相エピタキシャル成長方法
JP4211897B2 (ja) 液相エピタキシャル成長方法
JPS6021894A (ja) 液相エピタキシヤル成長方法
JP2813711B2 (ja) ▲ｉｉｉ▼−▲ｖ▼化合物半導体結晶への亜鉛拡散方法
JPH04254321A (ja) 液相エピタキシャル成長方法
US4620854A (en) Method of preparing indium ingots
JP3101753B2 (ja) 気相成長方法
JPS59101823A (ja) 液相エピタキシヤル成長装置
US4366009A (en) Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase
US4566934A (en) Cleaning technique for LPE melt ingots
JP3202405B2 (ja) エピタキシャル成長方法
JP2538009B2 (ja) 液相エピキタシャル成長方法
JPH04315479A (ja) 半導体発光素子とその製造方法
JP3151277B2 (ja) 液相エピタキシャル成長法
JPS58190895A (ja) 液相エピタキシヤル成長方法
RU2072584C1 (ru) Способ локальной жидкостной эпитаксии
JPH0563235A (ja) 半導体素子の製造方法
JPS58196013A (ja) 液相エピタキシヤル成長方法
JPS60145608A (ja) 液相エピタキシヤル成長方法
JPH0687459B2 (ja) 気相成長装置
JPS6325292A (ja) 燐化インジウムガリウム混晶の結晶成長法