JPS5851558A - Ｍｏｓ型半導体装置 - Google Patents

Ｍｏｓ型半導体装置

Info

Publication number
JPS5851558A
JPS5851558A JP56150396A JP15039681A JPS5851558A JP S5851558 A JPS5851558 A JP S5851558A JP 56150396 A JP56150396 A JP 56150396A JP 15039681 A JP15039681 A JP 15039681A JP S5851558 A JPS5851558 A JP S5851558A
Authority
JP
Japan
Prior art keywords
circuit
layer
semiconductor substrate
mos type
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56150396A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410943B2 (cg-RX-API-DMAC10.html
Inventor
Shinichi Kunieda
国枝　伸一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56150396A priority Critical patent/JPS5851558A/ja
Publication of JPS5851558A publication Critical patent/JPS5851558A/ja
Publication of JPS6410943B2 publication Critical patent/JPS6410943B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56150396A 1981-09-22 1981-09-22 Ｍｏｓ型半導体装置 Granted JPS5851558A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56150396A JPS5851558A (ja) 1981-09-22 1981-09-22 Ｍｏｓ型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150396A JPS5851558A (ja) 1981-09-22 1981-09-22 Ｍｏｓ型半導体装置

Publications (2)

Publication Number Publication Date
JPS5851558A true JPS5851558A (ja) 1983-03-26
JPS6410943B2 JPS6410943B2 (cg-RX-API-DMAC10.html) 1989-02-22

Family

ID=15496060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150396A Granted JPS5851558A (ja) 1981-09-22 1981-09-22 Ｍｏｓ型半導体装置

Country Status (1)

Country Link
JP (1) JPS5851558A (cg-RX-API-DMAC10.html)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098791A (cg-RX-API-DMAC10.html) * 1973-12-27 1975-08-06
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
JPS5518006A (en) * 1978-07-25 1980-02-07 Toshiba Corp Mos-type dynamic memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098791A (cg-RX-API-DMAC10.html) * 1973-12-27 1975-08-06
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
JPS5518006A (en) * 1978-07-25 1980-02-07 Toshiba Corp Mos-type dynamic memory

Also Published As

Publication number Publication date
JPS6410943B2 (cg-RX-API-DMAC10.html) 1989-02-22

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