JPS5851512A - 半導体装置の電極形成方法 - Google Patents

半導体装置の電極形成方法

Info

Publication number
JPS5851512A
JPS5851512A JP15032181A JP15032181A JPS5851512A JP S5851512 A JPS5851512 A JP S5851512A JP 15032181 A JP15032181 A JP 15032181A JP 15032181 A JP15032181 A JP 15032181A JP S5851512 A JPS5851512 A JP S5851512A
Authority
JP
Japan
Prior art keywords
aluminum
film
forming
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15032181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142491B2 (enrdf_load_stackoverflow
Inventor
Mitsuharu Morishita
森下　光晴
Shiro Iwatani
史朗 岩谷
Mitsuaki Nanba
難波　光明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15032181A priority Critical patent/JPS5851512A/ja
Publication of JPS5851512A publication Critical patent/JPS5851512A/ja
Publication of JPH0142491B2 publication Critical patent/JPH0142491B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
JP15032181A 1981-09-22 1981-09-22 半導体装置の電極形成方法 Granted JPS5851512A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15032181A JPS5851512A (ja) 1981-09-22 1981-09-22 半導体装置の電極形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15032181A JPS5851512A (ja) 1981-09-22 1981-09-22 半導体装置の電極形成方法

Publications (2)

Publication Number Publication Date
JPS5851512A true JPS5851512A (ja) 1983-03-26
JPH0142491B2 JPH0142491B2 (enrdf_load_stackoverflow) 1989-09-13

Family

ID=15494461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15032181A Granted JPS5851512A (ja) 1981-09-22 1981-09-22 半導体装置の電極形成方法

Country Status (1)

Country Link
JP (1) JPS5851512A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01131647U (enrdf_load_stackoverflow) * 1988-02-26 1989-09-06
US7579692B2 (en) 2000-09-04 2009-08-25 Seiko Epson Corporation Method for forming a bump, semiconductor device and method of fabricating same, semiconductor chip, circuit board, and electronic instrument

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01131647U (enrdf_load_stackoverflow) * 1988-02-26 1989-09-06
US7579692B2 (en) 2000-09-04 2009-08-25 Seiko Epson Corporation Method for forming a bump, semiconductor device and method of fabricating same, semiconductor chip, circuit board, and electronic instrument

Also Published As

Publication number Publication date
JPH0142491B2 (enrdf_load_stackoverflow) 1989-09-13

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