JPS5849032B2 - 高電界コンデンサ構造体 - Google Patents

高電界コンデンサ構造体

Info

Publication number
JPS5849032B2
JPS5849032B2 JP53012521A JP1252178A JPS5849032B2 JP S5849032 B2 JPS5849032 B2 JP S5849032B2 JP 53012521 A JP53012521 A JP 53012521A JP 1252178 A JP1252178 A JP 1252178A JP S5849032 B2 JPS5849032 B2 JP S5849032B2
Authority
JP
Japan
Prior art keywords
layer
interface
electric field
voltage
trapping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53012521A
Other languages
English (en)
Japanese (ja)
Other versions
JPS548484A (en
Inventor
ドネリ−・ジエイ・デイマリア
ドナルド・ア−ル・ヤング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS548484A publication Critical patent/JPS548484A/ja
Publication of JPS5849032B2 publication Critical patent/JPS5849032B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10P14/69215—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/662—
    • H10P30/40—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP53012521A 1977-06-21 1978-02-08 高電界コンデンサ構造体 Expired JPS5849032B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US000000808500 1977-06-21
US05/808,500 US4143393A (en) 1977-06-21 1977-06-21 High field capacitor structure employing a carrier trapping region

Publications (2)

Publication Number Publication Date
JPS548484A JPS548484A (en) 1979-01-22
JPS5849032B2 true JPS5849032B2 (ja) 1983-11-01

Family

ID=25198950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53012521A Expired JPS5849032B2 (ja) 1977-06-21 1978-02-08 高電界コンデンサ構造体

Country Status (12)

Country Link
US (1) US4143393A (index.php)
JP (1) JPS5849032B2 (index.php)
AU (1) AU517008B2 (index.php)
BE (1) BE864116A (index.php)
BR (1) BR7803753A (index.php)
CA (1) CA1091312A (index.php)
DE (1) DE2805170A1 (index.php)
ES (1) ES467327A1 (index.php)
GB (1) GB1587022A (index.php)
IT (1) IT1109956B (index.php)
NL (1) NL7806558A (index.php)
SE (1) SE437744B (index.php)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US4861976A (en) * 1988-06-06 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
JP2722873B2 (ja) * 1991-07-29 1998-03-09 日本電気株式会社 半導体装置およびその製造方法
KR100335778B1 (ko) 1999-04-08 2002-05-09 박종섭 반도체 소자 및 그 제조 방법
KR100347547B1 (ko) 1999-07-30 2002-08-07 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6724655B2 (en) * 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6754104B2 (en) * 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6512274B1 (en) * 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6479862B1 (en) * 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6933548B1 (en) 2001-12-21 2005-08-23 Synopsys, Inc. Negative differential resistance load element
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6864104B2 (en) * 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6861707B1 (en) * 2002-06-28 2005-03-01 Progressant Technologies, Inc. Negative differential resistance (NDR) memory cell with reduced soft error rate
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6912151B2 (en) * 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6980467B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6806117B2 (en) * 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US7005711B2 (en) * 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US9712128B2 (en) 2014-02-09 2017-07-18 Sitime Corporation Microelectromechanical resonator
US10676349B1 (en) 2016-08-12 2020-06-09 Sitime Corporation MEMS resonator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252101A (index.php) * 1959-05-30
US4003701A (en) * 1971-02-02 1977-01-18 Scott Paper Company Graft copolymerization processes
JPS4840816A (index.php) * 1971-09-23 1973-06-15
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
JPS5532040B2 (index.php) * 1973-08-09 1980-08-22
US3972059A (en) * 1973-12-28 1976-07-27 International Business Machines Corporation Dielectric diode, fabrication thereof, and charge store memory therewith
DE2446088A1 (de) * 1974-09-26 1976-04-01 Siemens Ag Statisches speicherelement und verfahren zu seiner herstellung
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states

Also Published As

Publication number Publication date
DE2805170C2 (index.php) 1987-09-24
GB1587022A (en) 1981-03-25
BE864116A (fr) 1978-06-16
JPS548484A (en) 1979-01-22
US4143393A (en) 1979-03-06
BR7803753A (pt) 1979-03-20
SE7803097L (sv) 1978-12-22
IT7821206A0 (it) 1978-03-15
ES467327A1 (es) 1978-11-01
NL7806558A (nl) 1978-12-27
DE2805170A1 (de) 1979-01-04
AU3469478A (en) 1979-10-11
SE437744B (sv) 1985-03-11
AU517008B2 (en) 1981-07-02
IT1109956B (it) 1985-12-23
CA1091312A (en) 1980-12-09

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