JPS5848981A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS5848981A
JPS5848981A JP14636381A JP14636381A JPS5848981A JP S5848981 A JPS5848981 A JP S5848981A JP 14636381 A JP14636381 A JP 14636381A JP 14636381 A JP14636381 A JP 14636381A JP S5848981 A JPS5848981 A JP S5848981A
Authority
JP
Japan
Prior art keywords
grating
gain
diffraction
gratings
directions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14636381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS622478B2 (enrdf_load_stackoverflow
Inventor
Hideto Furuyama
英人 古山
Yutaka Uematsu
豊 植松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP14636381A priority Critical patent/JPS5848981A/ja
Publication of JPS5848981A publication Critical patent/JPS5848981A/ja
Publication of JPS622478B2 publication Critical patent/JPS622478B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
JP14636381A 1981-09-18 1981-09-18 半導体レ−ザ装置 Granted JPS5848981A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14636381A JPS5848981A (ja) 1981-09-18 1981-09-18 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14636381A JPS5848981A (ja) 1981-09-18 1981-09-18 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS5848981A true JPS5848981A (ja) 1983-03-23
JPS622478B2 JPS622478B2 (enrdf_load_stackoverflow) 1987-01-20

Family

ID=15406020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14636381A Granted JPS5848981A (ja) 1981-09-18 1981-09-18 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS5848981A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293683A (ja) * 1988-05-23 1989-11-27 Hitachi Ltd 波長可変半導体レーザ
US4971415A (en) * 1984-11-16 1990-11-20 Canon Kabushiki Kaisha Multibeam emitting device
EP0641053A1 (en) * 1993-08-30 1995-03-01 AT&T Corp. Method and apparatus for control of lasing wavelength in distributed feedback lasers
EP0704946A1 (de) * 1994-08-31 1996-04-03 Deutsche Telekom AG Optoelektronisches Multi-Wellenlängen Bauelement
EP0732785A1 (en) * 1995-03-17 1996-09-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device and method of fabricating semiconductor laser device
EP1391756A1 (en) * 2002-08-20 2004-02-25 Agilent Technologies, Inc. - a Delaware corporation - Wavelength-selective distributed Bragg reflector device
WO2022235390A1 (en) * 2021-05-06 2022-11-10 Microsoft Technology Licensing, Llc Wide bandwidth laser chip

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6991466B2 (ja) 2018-06-22 2022-01-12 マツダ株式会社 車両制御システム及び方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971415A (en) * 1984-11-16 1990-11-20 Canon Kabushiki Kaisha Multibeam emitting device
JPH01293683A (ja) * 1988-05-23 1989-11-27 Hitachi Ltd 波長可変半導体レーザ
EP0641053A1 (en) * 1993-08-30 1995-03-01 AT&T Corp. Method and apparatus for control of lasing wavelength in distributed feedback lasers
US5606573A (en) * 1993-08-30 1997-02-25 Lucent Technologies Inc. Method and apparatus for control of lasing wavelength in distributed feedback lasers
EP0704946A1 (de) * 1994-08-31 1996-04-03 Deutsche Telekom AG Optoelektronisches Multi-Wellenlängen Bauelement
EP0732785A1 (en) * 1995-03-17 1996-09-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device and method of fabricating semiconductor laser device
EP1391756A1 (en) * 2002-08-20 2004-02-25 Agilent Technologies, Inc. - a Delaware corporation - Wavelength-selective distributed Bragg reflector device
WO2022235390A1 (en) * 2021-05-06 2022-11-10 Microsoft Technology Licensing, Llc Wide bandwidth laser chip

Also Published As

Publication number Publication date
JPS622478B2 (enrdf_load_stackoverflow) 1987-01-20

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