JPS5844852U - semiconductor wafer - Google Patents

semiconductor wafer

Info

Publication number
JPS5844852U
JPS5844852U JP13971081U JP13971081U JPS5844852U JP S5844852 U JPS5844852 U JP S5844852U JP 13971081 U JP13971081 U JP 13971081U JP 13971081 U JP13971081 U JP 13971081U JP S5844852 U JPS5844852 U JP S5844852U
Authority
JP
Japan
Prior art keywords
semiconductor wafer
grooves
chip
view
divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13971081U
Other languages
Japanese (ja)
Inventor
久和 片岡
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP13971081U priority Critical patent/JPS5844852U/en
Publication of JPS5844852U publication Critical patent/JPS5844852U/en
Pending legal-status Critical Current

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は従来の半導体ウェハの底面斜視図
およびその他の一部断面図、第3図はチップの接着態様
を示す斜視図、第4図は本考案C−実施例を示す半導体
ウェハの一部切欠底面斜祁図、第5図は第4図に示す半
導体ウェハを分割し:  たときの1つのチップの底面
斜視図、第6図は従;  来のチップを接着したときの
態様を示す断面図、し  第7図は本考案にかかるチッ
プを接着したときの態様を示す断面図セある。 10・・・・・・半導体ウェハの裏面、11・・・・・
・格子状;  のパターン溝、11Xi、  11X2
 、 ”・、 11)’t。 ・  1ly2.・・・・・・溝部、12・・曲チップ
、13・・開田〉  字状の溝部。
1 and 2 are bottom perspective views and other partial sectional views of conventional semiconductor wafers, FIG. 3 is a perspective view showing how chips are bonded, and FIG. 4 is a semiconductor device showing an embodiment of the present invention C. FIG. 5 is a partially cutaway bottom perspective view of a wafer; FIG. 5 is a bottom perspective view of one chip when the semiconductor wafer shown in FIG. 4 is divided; FIG. 6 is a bottom perspective view of a conventional chip; FIG. 7 is a sectional view showing an embodiment of the present invention when the chip is bonded. 10... Back side of semiconductor wafer, 11...
・Lattice pattern; pattern groove, 11Xi, 11X2
, ``・, 11)'t. ・ 1ly2.・・・Groove, 12...Curved tip, 13...Kaida> letter-shaped groove.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体ウェハの裏面に、該半導体ウェハが個々のチップ
に分割される際に各々のチップに溝部カニ設けられるよ
うに所定パターンを有する溝を形成したことを特徴とす
る半導体ウェハ。
1. A semiconductor wafer, characterized in that grooves having a predetermined pattern are formed on the back surface of the semiconductor wafer so that grooves are provided in each chip when the semiconductor wafer is divided into individual chips.
JP13971081U 1981-09-19 1981-09-19 semiconductor wafer Pending JPS5844852U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13971081U JPS5844852U (en) 1981-09-19 1981-09-19 semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13971081U JPS5844852U (en) 1981-09-19 1981-09-19 semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5844852U true JPS5844852U (en) 1983-03-25

Family

ID=29932891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13971081U Pending JPS5844852U (en) 1981-09-19 1981-09-19 semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5844852U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263674A (en) * 1975-11-20 1977-05-26 Matsushita Electronics Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263674A (en) * 1975-11-20 1977-05-26 Matsushita Electronics Corp Semiconductor device

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