JPS5844762A - 高電圧相補形ｍｏｓインバ−タアレイの集積構造 - Google Patents
高電圧相補形ｍｏｓインバ−タアレイの集積構造Info
- Publication number
- JPS5844762A JPS5844762A JP56061993A JP6199381A JPS5844762A JP S5844762 A JPS5844762 A JP S5844762A JP 56061993 A JP56061993 A JP 56061993A JP 6199381 A JP6199381 A JP 6199381A JP S5844762 A JPS5844762 A JP S5844762A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- gate
- transistor
- circuit
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56061993A JPS5844762A (ja) | 1981-04-24 | 1981-04-24 | 高電圧相補形ｍｏｓインバ−タアレイの集積構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56061993A JPS5844762A (ja) | 1981-04-24 | 1981-04-24 | 高電圧相補形ｍｏｓインバ−タアレイの集積構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5844762A true JPS5844762A (ja) | 1983-03-15 |
| JPH0221174B2 JPH0221174B2 (enrdf_load_stackoverflow) | 1990-05-14 |
Family
ID=13187228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56061993A Granted JPS5844762A (ja) | 1981-04-24 | 1981-04-24 | 高電圧相補形ｍｏｓインバ−タアレイの集積構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5844762A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010565A (ja) * | 1983-06-30 | 1985-01-19 | Fuji Electric Corp Res & Dev Ltd | 燃料電池 |
| JPS6051322A (ja) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | Ｃｍｏｓ電圧変換回路 |
| JPS61160449A (ja) * | 1984-12-29 | 1986-07-21 | 東洋紡績株式会社 | ポリエステルシツクアンドシン織物 |
| JPH04333614A (ja) * | 1991-02-22 | 1992-11-20 | Kuraray Co Ltd | ポリエステル糸および繊維製品 |
| US5227655A (en) * | 1990-02-15 | 1993-07-13 | Nec Corporation | Field effect transistor capable of easily adjusting switching speed thereof |
| JP2002251174A (ja) * | 2000-11-22 | 2002-09-06 | Hitachi Ltd | 表示装置 |
-
1981
- 1981-04-24 JP JP56061993A patent/JPS5844762A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010565A (ja) * | 1983-06-30 | 1985-01-19 | Fuji Electric Corp Res & Dev Ltd | 燃料電池 |
| JPS6051322A (ja) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | Ｃｍｏｓ電圧変換回路 |
| JPS61160449A (ja) * | 1984-12-29 | 1986-07-21 | 東洋紡績株式会社 | ポリエステルシツクアンドシン織物 |
| US5227655A (en) * | 1990-02-15 | 1993-07-13 | Nec Corporation | Field effect transistor capable of easily adjusting switching speed thereof |
| JPH04333614A (ja) * | 1991-02-22 | 1992-11-20 | Kuraray Co Ltd | ポリエステル糸および繊維製品 |
| JP2002251174A (ja) * | 2000-11-22 | 2002-09-06 | Hitachi Ltd | 表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0221174B2 (enrdf_load_stackoverflow) | 1990-05-14 |
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