JPS584460B2 - ハンドウタイキオクソウチ - Google Patents
ハンドウタイキオクソウチInfo
- Publication number
- JPS584460B2 JPS584460B2 JP49087854A JP8785474A JPS584460B2 JP S584460 B2 JPS584460 B2 JP S584460B2 JP 49087854 A JP49087854 A JP 49087854A JP 8785474 A JP8785474 A JP 8785474A JP S584460 B2 JPS584460 B2 JP S584460B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- transistor
- substrate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005264 electron capture Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Landscapes
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49087854A JPS584460B2 (ja) | 1974-07-31 | 1974-07-31 | ハンドウタイキオクソウチ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49087854A JPS584460B2 (ja) | 1974-07-31 | 1974-07-31 | ハンドウタイキオクソウチ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5115938A JPS5115938A (enrdf_load_stackoverflow) | 1976-02-07 |
| JPS584460B2 true JPS584460B2 (ja) | 1983-01-26 |
Family
ID=13926460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49087854A Expired JPS584460B2 (ja) | 1974-07-31 | 1974-07-31 | ハンドウタイキオクソウチ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS584460B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159613A (enrdf_load_stackoverflow) * | 1974-06-12 | 1975-12-24 | ||
| JPS5356722U (enrdf_load_stackoverflow) * | 1976-10-15 | 1978-05-15 | ||
| JPS57113282A (en) * | 1980-12-30 | 1982-07-14 | Fujitsu Ltd | Semiconductor memory device |
| JPS61267362A (ja) * | 1985-05-22 | 1986-11-26 | Nec Corp | 半導体記憶装置 |
-
1974
- 1974-07-31 JP JP49087854A patent/JPS584460B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5115938A (enrdf_load_stackoverflow) | 1976-02-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4016588A (en) | Non-volatile semiconductor memory device | |
| US4250569A (en) | Semiconductor memory device | |
| US7609551B2 (en) | Semiconductor memory device | |
| US5291439A (en) | Semiconductor memory cell and memory array with inversion layer | |
| US5429965A (en) | Method for manufacturing a semiconductor memory | |
| US4654828A (en) | Nonvolatile semiconductor memory | |
| JPS6046554B2 (ja) | 半導体記憶素子及び記憶回路 | |
| US20060097311A1 (en) | Semiconductor memory device | |
| US4131983A (en) | Adjustment of avalanche voltage in DIFMOS memory devices by control of impurity doping | |
| JPS6112396B2 (enrdf_load_stackoverflow) | ||
| JP2008511947A (ja) | 集積されたｄｒａｍ−ｎｖｒａｍ多値メモリ | |
| US7092291B2 (en) | Nonvolatile semiconductor memory device, charge injection method thereof and electronic apparatus | |
| US7224620B2 (en) | CAcT-Tg (CATT) low voltage NVM cells | |
| EP0177816B1 (en) | Non-volatile dynamic random access memory cell | |
| JP2005537649A (ja) | 非コンタクト形態のトンネル分離ｐウェルを有する不揮発性メモリアレイの構造、製造方法及び操作方法 | |
| US4432075A (en) | Electrically programmable non-volatile memory | |
| KR100706071B1 (ko) | 단일비트 비휘발성 메모리셀 및 그것의 프로그래밍 및삭제방법 | |
| US4486859A (en) | Electrically alterable read-only storage cell and method of operating same | |
| US6528845B1 (en) | Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection | |
| US4435785A (en) | Unipolar voltage non-volatile JRAM cell | |
| JPH0794613A (ja) | 半導体装置及びその製造方法 | |
| JPS584460B2 (ja) | ハンドウタイキオクソウチ | |
| JPH0577189B2 (enrdf_load_stackoverflow) | ||
| US3908182A (en) | Non-volatile memory cell | |
| JP2806552B2 (ja) | 半導体不揮発性記憶装置 |