JPS584450B2 - ハンドウタイノ カクサンド−ピングシヨリヨウノ コタイノリンガンユウゲンブツタイオヨビ ソノセイゾウホウ - Google Patents

ハンドウタイノ カクサンド−ピングシヨリヨウノ コタイノリンガンユウゲンブツタイオヨビ ソノセイゾウホウ

Info

Publication number
JPS584450B2
JPS584450B2 JP48036560A JP3656073A JPS584450B2 JP S584450 B2 JPS584450 B2 JP S584450B2 JP 48036560 A JP48036560 A JP 48036560A JP 3656073 A JP3656073 A JP 3656073A JP S584450 B2 JPS584450 B2 JP S584450B2
Authority
JP
Japan
Prior art keywords
phosphorus
silicon
diffusion
solid
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48036560A
Other languages
English (en)
Japanese (ja)
Other versions
JPS4910665A (cg-RX-API-DMAC7.html
Inventor
カール・ヒユース・マクマトリー
ヨリヒロ・ムラタ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kennecott Corp
Original Assignee
Kennecott Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kennecott Corp filed Critical Kennecott Corp
Publication of JPS4910665A publication Critical patent/JPS4910665A/ja
Publication of JPS584450B2 publication Critical patent/JPS584450B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225Diffusion sources
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material
    • Y10S252/951Doping agent source material for vapor transport

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
JP48036560A 1972-03-31 1973-03-30 ハンドウタイノ カクサンド−ピングシヨリヨウノ コタイノリンガンユウゲンブツタイオヨビ ソノセイゾウホウ Expired JPS584450B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00239897A US3849344A (en) 1972-03-31 1972-03-31 Solid diffusion sources containing phosphorus and silicon

Publications (2)

Publication Number Publication Date
JPS4910665A JPS4910665A (cg-RX-API-DMAC7.html) 1974-01-30
JPS584450B2 true JPS584450B2 (ja) 1983-01-26

Family

ID=22904197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48036560A Expired JPS584450B2 (ja) 1972-03-31 1973-03-30 ハンドウタイノ カクサンド−ピングシヨリヨウノ コタイノリンガンユウゲンブツタイオヨビ ソノセイゾウホウ

Country Status (3)

Country Link
US (1) US3849344A (cg-RX-API-DMAC7.html)
JP (1) JPS584450B2 (cg-RX-API-DMAC7.html)
CA (1) CA1011227A (cg-RX-API-DMAC7.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA967173A (en) * 1973-01-04 1975-05-06 Peter C. Schultz Fused oxide type glasses
US4025464A (en) * 1973-11-01 1977-05-24 Mitsuo Yamashita Composition for diffusing phosphorus
US3972838A (en) * 1973-11-01 1976-08-03 Denki Kagaku Kogyo Kabushiki Kaisha Composition for diffusing phosphorus
US3931039A (en) * 1973-11-01 1976-01-06 Denki Kagaku Kogyo Kabushiki Kaisha Composition for diffusing phosphorus
US3954525A (en) * 1974-08-26 1976-05-04 The Carborundum Company Hot-pressed solid diffusion sources for phosphorus
US3931056A (en) * 1974-08-26 1976-01-06 The Carborundum Company Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates
US3975308A (en) * 1975-02-07 1976-08-17 The Carborundum Company Preparation of pyrophosphates
SE420596B (sv) * 1975-03-25 1981-10-19 Osaka Packing Formad kropp av amorf kiseldioxid, eventuellt innehallande kalciumkarbonat, sett att framstella en formad kropp av amorf kiseldioxid samt partikel av amorf kiseldioxid for framstellning av en formad kropp
US4033790A (en) * 1976-07-29 1977-07-05 Denki Kagaku Kogyo Kabushiki Kaisha Solid diffusion dopants for semiconductors and method of making the same
US4596716A (en) * 1983-06-08 1986-06-24 Kennecott Corporation Porous silicon nitride semiconductor dopant carriers
JPS6020510A (ja) * 1983-07-13 1985-02-01 Matsushita Electronics Corp 不純物拡散方法
DE3575910D1 (de) * 1985-09-06 1990-03-15 Osaka Packing Formkoerper aus kieselsaeure.
CA1244969A (en) * 1986-10-29 1988-11-15 Mitel Corporation Method for diffusing p-type material using boron disks
US4749615A (en) * 1986-10-31 1988-06-07 Stemcor Corporation Semiconductor dopant source
US5503816A (en) * 1993-09-27 1996-04-02 Becton Dickinson And Company Silicate compounds for DNA purification
TW200304372A (en) * 2002-03-20 2003-10-01 Kanegafuchi Chemical Ind Compositions for diabetes
US20030228475A1 (en) * 2002-04-18 2003-12-11 Minoru Komada Barrier film and laminated material, container for wrapping and image display medium using the same, and manufacturing method for barrier film
US7658822B2 (en) * 2005-08-11 2010-02-09 Wintek Electro-Optics Corporation SiOx:Si composite articles and methods of making same
US7790060B2 (en) * 2005-08-11 2010-09-07 Wintek Electro Optics Corporation SiOx:Si composite material compositions and methods of making same
US7749406B2 (en) * 2005-08-11 2010-07-06 Stevenson David E SiOx:Si sputtering targets and method of making and using such targets

Also Published As

Publication number Publication date
JPS4910665A (cg-RX-API-DMAC7.html) 1974-01-30
CA1011227A (en) 1977-05-31
US3849344A (en) 1974-11-19

Similar Documents

Publication Publication Date Title
JPS584450B2 (ja) ハンドウタイノ カクサンド−ピングシヨリヨウノ コタイノリンガンユウゲンブツタイオヨビ ソノセイゾウホウ
US6013236A (en) Wafer
US2854364A (en) Sublimation process for manufacturing silicon carbide crystals
US4040849A (en) Polycrystalline silicon articles by sintering
CA2339649C (en) Silicon carbide sinter and process for producing the same
JPS584451B2 (ja) リンド−ピングヨウ コタイカクサンゲン
JPS5850929B2 (ja) 炭化ケイ素粉末の製造方法
JPS6240317B2 (cg-RX-API-DMAC7.html)
US4800175A (en) Phosphorous planar dopant source for low temperature applications
JPS5814738B2 (ja) リンド−ピングヨウコタイカクサンゲンノ セイゾウホウホウ
US3975308A (en) Preparation of pyrophosphates
US5892236A (en) Part for ion implantation device
JPS60122797A (ja) 窒化アルミニウム単結晶の製造方法
EP0134077B1 (en) Novel arsenate dopant compounds
US2040236A (en) Process of making bonded silicon carbide refractories
US4846902A (en) Solid diffusion source of GD oxide/P205 compound and method of making silicon wafer
JP3793553B2 (ja) 黒色SiO2質耐食性部材及びその製造方法
EP0156054B1 (en) Porous silicon nitride semiconductor dopant carriers
KR20200009943A (ko) 규소-이산화규소계 소결체, 이의 제조방법, 및 이를 이용하여 제조되는 가스 배리어 필름
EP0148833A1 (en) PROCESS FOR PRODUCING YTTRIUM SILICON OXYNITRIDES.
US20020071803A1 (en) Method of producing silicon carbide power
JPH0567593B2 (cg-RX-API-DMAC7.html)
JPS62148309A (ja) 高α型窒化珪素粉末の製造法
JPH02258677A (ja) SiC粉末、及びその製造法並びに使用法
JP3397503B2 (ja) 低圧相窒化ほう素粉末の製造方法