JPS5843453A - ポリイミド材料の食刻方法 - Google Patents
ポリイミド材料の食刻方法Info
- Publication number
- JPS5843453A JPS5843453A JP57101480A JP10148082A JPS5843453A JP S5843453 A JPS5843453 A JP S5843453A JP 57101480 A JP57101480 A JP 57101480A JP 10148082 A JP10148082 A JP 10148082A JP S5843453 A JPS5843453 A JP S5843453A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- polyimide
- mide
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims description 56
- 239000004642 Polyimide Substances 0.000 title claims description 42
- 229920001721 polyimide Polymers 0.000 title claims description 42
- 238000005530 etching Methods 0.000 title claims description 33
- 238000000034 method Methods 0.000 claims description 25
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 51
- 239000003153 chemical reaction reagent Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000738392 Homo sapiens Uncharacterized protein C4orf54 Proteins 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 102100037915 Uncharacterized protein C4orf54 Human genes 0.000 description 1
- GCPXMJHSNVMWNM-UHFFFAOYSA-N arsenous acid Chemical compound O[As](O)O GCPXMJHSNVMWNM-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- -1 strong bases Chemical compound 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polymers & Plastics (AREA)
- Forests & Forestry (AREA)
- Mechanical Engineering (AREA)
- Weting (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/299,370 US4353778A (en) | 1981-09-04 | 1981-09-04 | Method of etching polyimide |
| US299370 | 1994-09-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5843453A true JPS5843453A (ja) | 1983-03-14 |
| JPH0145904B2 JPH0145904B2 (enExample) | 1989-10-05 |
Family
ID=23154488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57101480A Granted JPS5843453A (ja) | 1981-09-04 | 1982-06-15 | ポリイミド材料の食刻方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4353778A (enExample) |
| EP (1) | EP0073910B1 (enExample) |
| JP (1) | JPS5843453A (enExample) |
| CA (1) | CA1155736A (enExample) |
| DE (1) | DE3279207D1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59182531A (ja) * | 1983-04-01 | 1984-10-17 | Hitachi Micro Comput Eng Ltd | 半導体装置における絶縁膜加工法 |
| JPS6276723A (ja) * | 1985-09-30 | 1987-04-08 | Matsushita Electronics Corp | 基板上へのレジストパタ−ン形成方法 |
| JPH05279752A (ja) * | 1992-03-31 | 1993-10-26 | Kawasaki Steel Corp | 薄帯の連続焼鈍方法及び装置 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4656050A (en) * | 1983-11-30 | 1987-04-07 | International Business Machines Corporation | Method of producing electronic components utilizing cured vinyl and/or acetylene terminated copolymers |
| US4699803A (en) * | 1983-11-30 | 1987-10-13 | International Business Machines Corporation | Method for forming electrical components comprising cured vinyl and/or acetylene terminated copolymers |
| US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
| GB8523373D0 (en) * | 1985-09-21 | 1985-10-23 | Stc Plc | Via profiling in integrated circuits |
| US4830706A (en) * | 1986-10-06 | 1989-05-16 | International Business Machines Corporation | Method of making sloped vias |
| JPH0626201B2 (ja) * | 1987-10-15 | 1994-04-06 | 富士通株式会社 | 半導体装置の製造方法 |
| US4883744A (en) * | 1988-05-17 | 1989-11-28 | International Business Machines Corporation | Forming a polymide pattern on a substrate |
| US4908096A (en) * | 1988-06-24 | 1990-03-13 | Allied-Signal Inc. | Photodefinable interlevel dielectrics |
| US4846929A (en) * | 1988-07-13 | 1989-07-11 | Ibm Corporation | Wet etching of thermally or chemically cured polyimide |
| US4857143A (en) * | 1988-12-16 | 1989-08-15 | International Business Machines Corp. | Wet etching of cured polyimide |
| US5242713A (en) * | 1988-12-23 | 1993-09-07 | International Business Machines Corporation | Method for conditioning an organic polymeric material |
| GB2226991A (en) * | 1989-01-13 | 1990-07-18 | Ibm | Etching organic polymeric materials |
| US5217849A (en) * | 1989-08-28 | 1993-06-08 | Sumitomo Metal Mining Company Limited | Process for making a two-layer film carrier |
| US5470693A (en) * | 1992-02-18 | 1995-11-28 | International Business Machines Corporation | Method of forming patterned polyimide films |
| US6221567B1 (en) * | 1998-01-14 | 2001-04-24 | Fujitsu Limited | Method of patterning polyamic acid layers |
| US6557253B1 (en) * | 1998-02-09 | 2003-05-06 | Tessera, Inc. | Method of making components with releasable leads |
| TWI270965B (en) * | 2004-10-14 | 2007-01-11 | Advanced Semiconductor Eng | Manufacturing method of passivation layer on wafer and manufacturing method of bumps on wafer |
| US20100071765A1 (en) * | 2008-09-19 | 2010-03-25 | Peter Cousins | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer |
| TW201026513A (en) * | 2009-01-08 | 2010-07-16 | Univ Nat Cheng Kung | Imprinting process of polyimide |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3767493A (en) * | 1971-06-17 | 1973-10-23 | Ibm | Two-step photo-etching method for semiconductors |
| US4113550A (en) * | 1974-08-23 | 1978-09-12 | Hitachi, Ltd. | Method for fabricating semiconductor device and etchant for polymer resin |
| DE2638799C3 (de) * | 1976-08-27 | 1981-12-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zur Verbesserung der Haftung von metallischen Leiterzügen auf Polyimidschichten in integrierten Schaltungen |
-
1981
- 1981-09-04 US US06/299,370 patent/US4353778A/en not_active Expired - Lifetime
-
1982
- 1982-06-15 JP JP57101480A patent/JPS5843453A/ja active Granted
- 1982-07-15 CA CA000407334A patent/CA1155736A/en not_active Expired
- 1982-07-16 EP EP82106403A patent/EP0073910B1/en not_active Expired
- 1982-07-16 DE DE8282106403T patent/DE3279207D1/de not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59182531A (ja) * | 1983-04-01 | 1984-10-17 | Hitachi Micro Comput Eng Ltd | 半導体装置における絶縁膜加工法 |
| JPS6276723A (ja) * | 1985-09-30 | 1987-04-08 | Matsushita Electronics Corp | 基板上へのレジストパタ−ン形成方法 |
| JPH05279752A (ja) * | 1992-03-31 | 1993-10-26 | Kawasaki Steel Corp | 薄帯の連続焼鈍方法及び装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0073910A3 (en) | 1986-03-19 |
| CA1155736A (en) | 1983-10-25 |
| DE3279207D1 (en) | 1988-12-15 |
| EP0073910A2 (en) | 1983-03-16 |
| JPH0145904B2 (enExample) | 1989-10-05 |
| EP0073910B1 (en) | 1988-11-09 |
| US4353778A (en) | 1982-10-12 |
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